| Avalanche ruggedness of parallel SiC power MOSFETs A Fayyaz, B Asllani, A Castellazzi, M Riccio, A Irace Microelectronics Reliability 88, 666-670, 2018 | 27 | 2018 |
| VTH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate B Asllani, A Castellazzi, OA Salvado, A Fayyaz, H Morel, D Planson 2019 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2019 | 16 | 2019 |
| VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs B Asllani, A Fayyaz, A Castellazzi, H Morel, D Planson Microelectronics Reliability 88, 604-609, 2018 | 16 | 2018 |
| SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation B Asllani, H Morel, D Planson, A Fayyaz, A Castellazzi 2018 IEEE International Conference on Electrical Systems for Aircraft …, 2018 | 12 | 2018 |
| Extraction of the 4H-SiC/SiO2 Barrier Height Over Temperature O Aviñó-Salvadó, B Asllani, C Buttay, C Raynaud, H Morel IEEE Transactions on Electron Devices 67 (1), 63-68, 2019 | 11 | 2019 |
| 10 kV silicon carbide PiN diodes—From design to packaged component characterization B Asllani, H Morel, LV Phung, D Planson Energies 12 (23), 4566, 2019 | 10 | 2019 |
| Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors D Planson, B Asllani, LV Phung, P Bevilacqua, H Hamad, C Raynaud Materials Science in Semiconductor Processing 94, 116-127, 2019 | 9 | 2019 |
| Subthreshold drain current hysteresis of planar SiC MOSFETs B Asllani, A Castellazzi, D Planson, H Morel Materials Science Forum 963, 184-188, 2019 | 5 | 2019 |
| Advanced Electrical characterisation of high voltage 4H-SiC PiN diodes B Asllani, D Planson, P Bevilacqua, JB Fonder, B Choucoutou, H Morel, ... Materials Science Forum 963, 567-571, 2019 | 5 | 2019 |
| Cryogenic to High temperature exploration of 4H-SiC W-SBD M Berthou, B Asllani, P Brosselard, P Godignon Materials Science Forum 821, 583-587, 2015 | 4 | 2015 |
| Towards a Common Mode Current Free Packaging Solution for High Voltage Series Connected SiC MOSFET Switches CM de Vienne, B Asllani, H Reynes, M Guillet, A Al-Hinai, P Lefranc, ... PCIM Europe 2023; International Exhibition and Conference for Power …, 2023 | 3 | 2023 |
| Experimental study of the reduction and removal of turn-on snubber for IGCT based MMC submodule using fast silicon diodes A Boutry, C Buttay, B Asllani, B Lefebvre, E Vagnon, D Dong 2022 24th European Conference on Power Electronics and Applications (EPE'22 …, 2022 | 3 | 2022 |
| 4H-SiC PiN diode protected by narrow field rings investigated by the micro-OBIC method D Planson, C Sonneville, P Bevilacqua, LV Phung, B Asllani, D Tournier, ... Materials Science Forum 1062, 341-345, 2022 | 3 | 2022 |
| Model parameter extraction tool for the analysis of series-connected SiC-MOSFETs CM de Vienne, B Asllani, B Lefebvre, P Lefranc, PO Jeannin PCIM Europe digital days 2021; International Exhibition and Conference for …, 2021 | 3 | 2021 |
| Interest of using a micro-meter spatial resolution to study SiC semi-conductor devices by Optical Beam Induced Current (OBIC) C Sonneville, D Planson, LV Phung, P Bevilacqua, B Asllani Materials Science Forum 1004, 290-298, 2020 | 3 | 2020 |
| Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range B Asllani, M Berthou, D Tournier, P Brosselard, P Godignon Materials Science Forum 858, 741-744, 2016 | 3 | 2016 |
| Caractérisation et modélisation de diodes Schottky et JBS SiC-4H pour des applications haute tension B Asllani Université de Lyon, 2016 | 2 | 2016 |
| Experimental investigation of a 10 kV-70A switch with six SiC-MOSFETs in a series-connection configuration C Mathieu de Vienne, P Lefranc, B Asllani, PO Jeannin, B Lefebvre Materials Science Forum 1062, 472-476, 2022 | 1 | 2022 |
| Demonstration of the short-circuit ruggedness of a 10 kV silicon carbide bipolar junction transistor B Asllani, H Morel, P Bevilacqua, D Planson 2020 22nd European Conference on Power Electronics and Applications (EPE'20 …, 2020 | 1 | 2020 |
| Static and Switching Characteristics of 10 kV-class Silicon Carbide Bipolar Junction Transistors and Darlingtons B Asllani, P Bevilacqua, H Morel, D Planson, LV Phung, B Choucoutou, ... Materials Science Forum 1004, 923-932, 2020 | 1 | 2020 |
Dominique PlansonProfesseur des Universités, INSA de LyonDirección de correo verificada de insa-lyon.fr
