Eoin O'Reilly
Eoin O'Reilly
Research Professor, Tyndall National Institute
Verified email at tyndall.ie
Title
Cited by
Cited by
Year
Electronic and atomic structure of amorphous carbon
J Robertson, EP O’reilly
Physical Review B 35 (6), 2946, 1987
15681987
Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots
PW Fry, IE Itskevich, DJ Mowbray, MS Skolnick, JJ Finley, JA Barker, ...
Physical review letters 84 (4), 733, 2000
6242000
Valence band engineering in strained-layer structures
EP O'Reilly
Semiconductor Science and Technology 4, 121, 1989
4851989
Theory of defects in vitreous silicon dioxide
EP O'Reilly, J Robertson
Physical Review B 27 (6), 3780, 1983
4831983
Theory of the electronic structure of GaN/AlN hexagonal quantum dots
AD Andreev, EP O’Reilly
Physical Review B 62 (23), 15851, 2000
4212000
Theory of enhanced bandgap non-parabolicity in GaN x As 1− x and related alloys
A Lindsay, EP O'Reilly
Solid state communications 112 (8), 443-447, 1999
2831999
Strain distributions in quantum dots of arbitrary shape
AD Andreev, JR Downes, DA Faux, EP OReilly
Journal of applied physics 86 (1), 297-305, 1999
2741999
Band-structure engineering in strained semiconductor lasers
EP O'Reilly, AR Adams
IEEE Journal of Quantum electronics 30 (2), 366-379, 1994
2321994
(Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen
PJ Klar, H Grüning, J Koch, S Schäfer, K Volz, W Stolz, W Heimbrodt, ...
Physical Review B 64 (12), 121203, 2001
2252001
Theoretical analysis of electron-hole alignment in InAs-GaAs quantum dots
JA Barker, EP O’Reilly
Physical Review B 61 (20), 13840, 2000
2162000
Unification of the band anticrossing and cluster-state models of dilute nitride semiconductor alloys
A Lindsay, EP O'Reilly
Physical review letters 93 (19), 196402, 2004
2122004
Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs
M Usman, CA Broderick, A Lindsay, EP O’Reilly
Physical Review B 84 (24), 245202, 2011
2012011
Dipole nanolaser
IE Protsenko, AV Uskov, OA Zaimidoroga, VN Samoilov, EP O’reilly
Physical Review A 71 (6), 063812, 2005
1942005
A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers
R Fehse, S Tomic, AR Adams, SJ Sweeney, EP O'Reilly, A Andreev, ...
IEEE Journal of selected topics in quantum electronics 8 (4), 801-810, 2002
1812002
Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers
S Tomic, EP O'Reilly, R Fehse, SJ Sweeney, AR Adams, AD Andreev, ...
IEEE Journal of selected topics in quantum electronics 9 (5), 1228-1238, 2003
1592003
Band engineering in dilute nitride and bismide semiconductor lasers
CA Broderick, M Usman, SJ Sweeney, EP O’Reilly
Semiconductor Science and Technology 27 (9), 094011, 2012
1532012
Tight-binding and k· p models for the electronic structure of Ga (In) NAs and related alloys
EP O'Reilly, A Lindsay, S Tomić, M Kamal-Saadi
Semiconductor science and technology 17 (8), 870, 2002
1522002
Evaluation of various approximations used in the envelope-function method
AT Meney, B Gonul, EP O’Reilly
Physical Review B 50 (15), 10893, 1994
1451994
Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in GaAs_ {1− x} N_ {x}
F Masia, G Pettinari, A Polimeni, M Felici, A Miriametro, M Capizzi, ...
Physical Review B 73 (7), 073201, 2006
1342006
A simple method for calculating strain distributions in quantum dot structures
JR Downes, DA Faux, EP O’Reilly
Journal of applied physics 81 (10), 6700-6702, 1997
1311997
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