Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels B Arnaudov, T Paskova, PP Paskov, B Magnusson, E Valcheva, ...
Physical Review B 69 (11), 115216, 2004
235 2004 Large-scale synthesis of free-standing N-doped graphene using microwave plasma N Bundaleska, J Henriques, M Abrashev, AM Botelho do Rego, ...
Scientific reports 8 (1), 12595, 2018
99 2018 Towards large-scale in free-standing graphene and N-graphene sheets E Tatarova, A Dias, J Henriques, M Abrashev, N Bundaleska, E Kovacevic, ...
Scientific reports 7 (1), 10175, 2017
88 2017 Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers T Paskova, V Darakchieva, PP Paskov, J Birch, E Valcheva, POA Persson, ...
Journal of crystal growth 281 (1), 55-61, 2005
81 2005 Bragg and Laue x-ray diffraction study of dislocations in thick hydride vapor phase epitaxy GaN films V Ratnikov, R Kyutt, T Shubina, T Paskova, E Valcheva, B Monemar
Journal of Applied Physics 88 (11), 6252-6259, 2000
66 2000 dielectric function from the midinfrared to the ultraviolet rangeA Kasic, E Valcheva, B Monemar, H Lu, WJ Schaff
Physical Review B 70 (11), 115217, 2004
64 2004 Deformation potentials of the and modes of InN V Darakchieva, PP Paskov, E Valcheva, T Paskova, B Monemar, ...
Applied physics letters 84 (18), 3636-3638, 2004
58 2004 Lattice parameters of GaN layers grown on a -plane sapphire: Effect of in-plane strain anisotropy V Darakchieva, PP Paskov, T Paskova, E Valcheva, B Monemar, ...
Applied physics letters 82 (5), 703-705, 2003
53 2003 Phonon mode behavior in strained wurtzite superlattices V Darakchieva, E Valcheva, PP Paskov, M Schubert, T Paskova, ...
Physical Review B 71 (11), 115329, 2005
50 2005 Multilayer model for Hall effect data analysis of semiconductor structures with step-changed conductivity B Arnaudov, T Paskova, S Evtimova, E Valcheva, M Heuken, B Monemar
Physical Review B 67 (4), 045314, 2003
49 2003 Optical and dielectric properties of dc magnetron sputtered AlN thin films correlated with deposition conditions V Dimitrova, D Manova, E Valcheva
Materials Science and Engineering: B 68 (1), 1-4, 1999
48 1999 Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer T Paskova, E Valcheva, J Birch, S Tungasmita, POÅ Persson, PP Paskov, ...
Journal of crystal growth 230 (3-4), 381-386, 2001
40 2001 Interface structure of hydride vapor phase epitaxial GaN grown with high-temperature reactively sputtered AlN buffer E Valcheva, T Paskova, S Tungasmita, POÅ Persson, J Birch, ...
Applied Physics Letters 76 (14), 1860-1862, 2000
36 2000 Epitaxial growth and orientation of AlN thin films on Si (001) substrates deposited by reactive magnetron sputtering E Valcheva, J Birch, PO Persson, S Tungasmita, L Hultman
Journal of applied physics 100 (12), 2006
30 2006 Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending T Paskova, V Darakchieva, E Valcheva, PP Paskov, IG Ivanov, ...
Journal of electronic materials 33, 389-394, 2004
28 2004 Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown ‘Templates’ T Paskova, S Tungasmita, E Valcheva, EB Svedberg, B Arnaudov, ...
Materials Research Society Internet Journal of Nitride Semiconductor …, 2000
28 2000 Nanopipes and their relationship to the growth mode in thick HVPE-GaN layers E Valcheva, T Paskova, B Monemar
Journal of crystal growth 255 (1-2), 19-26, 2003
25 2003 Polar and nonpolar GaN grown by HVPE: Preferable substrates for nitride‐based emitting devices T Paskova, PP Paskov, E Valcheva, V Darakchieva, J Birch, A Kasic, ...
physica status solidi (a) 201 (10), 2265-2270, 2004
23 2004 Infrared ellipsometry and Raman studies of hexagonal InN films: correlation between strain and vibrational properties V Darakchieva, PP Paskov, E Valcheva, T Paskova, M Schubert, ...
Superlattices and Microstructures 36 (4-6), 573-580, 2004
19 2004 Prospects for microwave plasma synthesized N-graphene in secondary electron emission mitigation applications N Bundaleska, A Dias, N Bundaleski, E Felizardo, J Henriques, ...
Scientific Reports 10 (1), 13013, 2020
18 2020