Slavko Mocevic
Slavko Mocevic
Ph.D. student, Virginia Tech, CPES
Dirección de correo verificada de vt.edu
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Design and testing of 1 kV H-bridge power electronics building block based on 1.7 kV SiC MOSFET module
J Wang, R Burgos, D Boroyevich, Z Liu
2018 International Power Electronics Conference (IPEC-Niigata 2018-ECCE Asia …, 2018
232018
Comparison between desaturation sensing and Rogowski coil current sensing for shortcircuit protection of 1.2 kV, 300 A SiC MOSFET module
S Mocevic, J Wang, R Burgos, D Boroyevich, C Stancu, M Jaksic, ...
2018 IEEE Applied Power Electronics Conference and Exposition (APEC), 2666-2672, 2018
222018
Phase current sensor and short-circuit detection based on Rogowski coils integrated on gate driver for 1.2 kV SiC MOSFET half-bridge module
S Mocevic, J Wang, R Burgos, D Boroyevich, M Jaksic, M Teimor, ...
2018 IEEE Energy Conversion Congress and Exposition (ECCE), 393-400, 2018
142018
A High-Speed Gate Driver with PCB-Embedded Rogowski Switch-Current Sensor for a 10 kV, 240 A, SiC MOSFET Module
J Wang, S Mocevic, Y Xu, C DiMarino, R Burgos, D Boroyevich
2018 IEEE Energy Conversion Congress and Exposition (ECCE), 5489-5494, 2018
102018
Phase current reconstruction based on Rogowski coils integrated on gate driver of SiC MOSFET half-bridge module for continuous and discontinuous PWM inverter applications
S Mocevic, J Wang, R Burgos, D Boroyevich, M Jaksic, M Teimor, ...
2019 IEEE Applied Power Electronics Conference and Exposition (APEC), 1029-1036, 2019
62019
Comparison and Discussion on Shortcircuit Protections for Silicon-Carbide MOSFET Modules: Desaturation Versus Rogowski Switch-Current Sensor
S Mocevic, J Wang, R Burgos, D Boroyevich, M Jaksic, C Stancu, ...
IEEE Transactions on Industry Applications 56 (3), 2880-2893, 2020
5*2020
High-Scalability Enhanced Gate Drivers for SiC MOSFET Modules with Transient Immunity beyond 100 V/ns
J Wang, S Mocevic, R Burgos, D Boroyevich
IEEE Transactions on Power Electronics, 2020
42020
Active Voltage Balancing Embedded Digital Gate Driver for Series-Connected 10 kV SiC MOSFETs
X Lin, L Ravi, S Mocevic, D Dong, R Burgos
2020 IEEE Applied Power Electronics Conference and Exposition (APEC), 1611-1616, 2020
32020
Power-Cell Design and Assessment Methodology based on a High-Current 10 kV SiC MOSFET Half-Bridge Module
S Mocevic, J Yu, Y Xu, J Stewart, J Wang, I Cvetkovic, D Dong, R Burgos, ...
IEEE Journal of Emerging and Selected Topics in Power Electronics, 2020
12020
Gate-Driver Integrated Junction Temperature Estimation of SiC MOSFET Modules
S Mocevic, V Mitrovic, J Wang, R Burgos, D Boroyevich, M Jaksic, ...
2020 IEEE Energy Conversion Congress and Exposition (ECCE), 3761-3768, 2020
2020
Third Quadrant Operation of 1.2 kV-10 kV SiC Planar MOSFETs: New Device Findings and Converter Validation
R Zhang, X Lin, J Liu, S Mocevic, D Dong, Y Zhang
2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020
2020
Third Quadrant Conduction Loss of 1.2–10 kV SiC MOSFETs: Impact of Gate Bias Control
R Zhang, X Lin, J Liu, S Mocevic, D Dong, Y Zhang
IEEE Transactions on Power Electronics 36 (2), 2033-2043, 2020
2020
Virginia Tech IEEE Student Branch Chapter Organizes Company and Laboratory Tours [Society News]
S Mocevic, R Rye, J Kozak
IEEE Power Electronics Magazine 5 (4), 79-80, 2018
2018
Virginia Tech PELS Student Chapter Hosts Wireless Power Transfer Events [Society News]
E Raszmann, S Mocevic
IEEE Power Electronics Magazine 5 (2), 90-90, 2018
2018
PCB-Embedded Phase Current Sensor and Short-Circuit Detector for High Power SiC-Based Converters
S Mocevic
Virginia Tech, 2018
2018
Assessment Methodology for Power-Cell based on High-Current 10 kV SiC MOSFET Half-Bridge Module
S Mocevic, J Yu, Y Xu, J Stewart, J Wang, I Cvetkovic, D Dong, R Burgos, ...
2020 IEEE 11th International Symposium on Power Electronics for Distributed …, 0
Current Sharing Behavior and Characterization of a 1200 V, 6.5 mΩ SiC Half-Bridge Power Module with Flexible PCB Gate Loop Connection
G Watt, S Mocevic, R Burgos, A Romero, M Jaksic, M Teimor
2019 IEEE Energy Conversion Congress and Exposition (ECCE), 5321-5328, 0
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
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