| Method and apparatus for pulsed plasma processing using a time resolved tuning scheme for rf power delivery S Banner, V Todorow, K Ramaswamy US Patent 8,264,154, 2012 | 491 | 2012 |
| Dual mode inductively coupled plasma reactor with adjustable phase coil assembly S Banna, VN Todorow, KS Collins, A Nguyen, MJ Salinas, Z Chen, ... US Patent App. 12/821,636, 2011 | 485 | 2011 |
| Method for fast and repeatable plasma ignition and tuning in plasma chambers W Bishara, S Banna US Patent App. 14/287,480, 2014 | 441 | 2014 |
| Electrostatic chuck with advanced RF and temperature uniformity D Lubomirsky, JY Sun, M Markovsky, K Makhratchev, DA Buchberger Jr, ... US Patent 8,937,800, 2015 | 351 | 2015 |
| Electrostatic chuck S Banna, V Todorow, D Lubomirsky US Patent App. 13/646,330, 2013 | 341 | 2013 |
| Inductively coupled plasma reactor having RF phase control and methods of use thereof S Banna, VN Todorow US Patent 8,368,308, 2013 | 263 | 2013 |
| Pulsed high-density plasmas for advanced dry etching processes S Banna, A Agarwal, G Cunge, M Darnon, E Pargon, O Joubert Journal of Vacuum Science & Technology A 30 (4), 2012 | 193 | 2012 |
| Extended and independent RF powered cathode substrate for extreme edge tunability V Todorow, S Banna, I Yousif, A Wang, G Leray US Patent 8,988,848, 2015 | 139 | 2015 |
| Measurement of bandgap energies in low-k organosilicates MT Nichols, W Li, D Pei, GA Antonelli, Q Lin, S Banna, Y Nishi, JL Shohet Journal of Applied Physics 115 (9), 2014 | 136 | 2014 |
| Inductively coupled pulsed plasmas in the presence of synchronous pulsed substrate bias for robust, reliable, and fine conductor etching S Banna, A Agarwal, K Tokashiki, H Cho, S Rauf, V Todorow, ... IEEE Transactions on Plasma Science 37 (9), 1730-1746, 2009 | 111 | 2009 |
| Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing C Petit-Etienne, M Darnon, L Vallier, E Pargon, G Cunge, F Boulard, ... Journal of Vacuum Science & Technology B 28 (5), 926-934, 2010 | 76 | 2010 |
| High efficiency inductively coupled plasma source with customized RF shield for plasma profile control S Banna, V Knyazik, W Bishara, V Todorow US Patent 9,945,033, 2018 | 68 | 2018 |
| Effect of simultaneous source and bias pulsing in inductively coupled plasma etching A Agarwal, PJ Stout, S Banna, S Rauf, K Tokashiki, JY Lee, K Collins Journal of Applied Physics 106 (10), 2009 | 67 | 2009 |
| Inductively coupled plasma source with phase control S Banna, Z Chen, V Todorow US Patent 8,933,628, 2015 | 49 | 2015 |
| Experimental observation of direct particle acceleration by stimulated emission of radiation S Banna, V Berezovsky, L Schächter Physical review letters 97 (13), 134801, 2006 | 42 | 2006 |
| The effect of water uptake on the mechanical properties of low-k organosilicate glass X Guo, JE Jakes, MT Nichols, S Banna, Y Nishi, JL Shohet Journal of Applied Physics 114 (8), 2013 | 41 | 2013 |
| Synchronous pulse plasma operation upon source and bias radio frequencys for inductively coupled plasma for highly reliable gate etching technology K Tokashiki, H Cho, S Banna, JY Lee, K Shin, V Todorow, WS Kim, ... Japanese journal of applied physics 48 (8S1), 08HD01, 2009 | 41 | 2009 |
| Particle acceleration by stimulated emission of radiation: Theory and experiment S Banna, V Berezovsky, L Schächter Physical Review E 74 (4), 046501, 2006 | 36 | 2006 |
| Extreme edge and skew control in icp plasma reactor S Banna, V Knyazik, K Tantiwong US Patent App. 14/543,316, 2015 | 32 | 2015 |
| The interaction of symmetric and asymmetric modes in a high-power traveling-wave amplifier S Banna, JA Nation, L Schachter, P Wang IEEE transactions on plasma science 28 (3), 798-811, 2000 | 32 | 2000 |
Maxime DarnonCNRS-Laboratoire Hubert CurienVerified email at univ-st-etienne.fr
