Segueix
Madhusudan Singh
Madhusudan Singh
Associate Professor at Indian Institute of Technology, Delhi
Correu electrònic verificat a umich.edu - Pàgina d'inici
Títol
Citada per
Citada per
Any
Inkjet printing—process and its applications
M Singh, HM Haverinen, P Dhagat, GE Jabbour
Advanced materials 22 (6), 673-685, 2010
26992010
Polarization Effects in Semiconductors-From Ab InitioTheory to Device Applications-Chapter II: Lateral and Vertical Charge Transport in Polar Nitride Heterostructures …
YR Wu, M Singh, J Singh
Springer, 2007
1026*2007
Extrafluorescent electroluminescence in organic light-emitting devices
M Segal, M Singh, K Rivoire, S Difley, T Van Voorhis, MA Baldo
Nature materials 6 (5), 374-378, 2007
2182007
Recent developments and directions in printed nanomaterials
HW Choi, T Zhou, M Singh, GE Jabbour
Nanoscale 7 (8), 3338-3355, 2015
1502015
Plasmonic excitation of organic double heterostructure solar cells
JK Mapel, M Singh, MA Baldo, K Celebi
Applied physics letters 90, 121102, 2007
1002007
Electroluminescence from printed stellate polyhedral oligomeric silsesquioxanes
M Singh, HS Chae, JD Froehlich, T Kondou, S Li, A Mochizuki, ...
Soft matter 5 (16), 3002-3005, 2009
922009
Surface plasmon polariton mediated energy transfer in organic photovoltaic devices
TD Heidel, JK Mapel, M Singh, K Celebi, MA Baldo
Applied Physics Letters 91, 093506, 2007
892007
Device scaling physics and channel velocities in AIGaN/GaN HFETs: velocities and effective gate length
YR Wu, M Singh, J Singh
IEEE Transactions on Electron Devices 53 (4), 588-593, 2006
762006
Design of high electron mobility devices with composite nitride channels
M Singh, J Singh
Journal of applied physics 94, 2498, 2003
622003
Gate leakage suppression and contact engineering in nitride heterostructures
YR Wu, M Singh, J Singh
Journal of applied physics 94, 5826, 2003
582003
Examination of tunnel junctions in the AlGaN/GaN system: Consequences of polarization charge
M Singh, Y Zhang, J Singh, U Mishra
Applied Physics Letters 77, 1867, 2000
562000
Sources of transconductance collapse in III-V nitrides-consequences of velocity-field relations and source/gate design
YR Wu, M Singh, J Singh
IEEE Transactions on Electron Devices 52 (6), 1048-1054, 2005
402005
Velocity overshoot effects and scaling issues in III-V nitrides
M Singh, YR Wu, J Singh
IEEE Transactions on Electron Devices 52 (3), 311-316, 2005
352005
Photovoltaic cell
M Baldo, J Mapel, M Singh
US Patent App. 11/290,625, 2007
272007
Printable displays and light sources for sensor applications: a review
RS Deol, HW Choi, M Singh, GE Jabbour
IEEE Sensors Journal 15 (6), 3186-3195, 2014
262014
Examination of LiNbO 3/nitride heterostructures
M Singh, YR Wu, J Singh
Solid-State Electronics 47 (12), 2155-2159, 2003
252003
Current–voltage characteristics of polar heterostructure junctions
M Singh, J Singh, U Mishra
Journal of applied physics 91, 2989, 2002
242002
The Role of the Carrier Mass in Semiconductor Quantum Dots
M Singh, V Ranjan, VA Singh
International Journal of Modern Physics B 14 (17), 1753-1766, 2000
222000
Ferroelectric random access memory based on one-transistor–one-capacitor structure for flexible electronics
D Mao, I Mejia, AL Salas-Villasenor, M Singh, H Stiegler, BE Gnade, ...
Organic Electronics 14 (2), 505-510, 2013
212013
Low-temperature solution-processed sol-gel K-rich KNN thin films for flexible electronics
RS Deol, M Mehra, B Mitra, M Singh
MRS Advances 3 (5), 269-275, 2018
72018
En aquests moments el sistema no pot dur a terme l'operació. Torneu-ho a provar més tard.
Articles 1–20