Yoichi Shiota
Yoichi Shiota
Institute for Chemical Research, Kyoto University
Dirección de correo verificada de scl.kyoto-u.ac.jp
TítuloCitado porAño
Large voltage-induced magnetic anisotropy change in a few atomic layers of iron
T Maruyama, Y Shiota, T Nozaki, K Ohta, N Toda, M Mizuguchi, ...
Nature nanotechnology 4 (3), 158, 2009
10102009
Induction of coherent magnetization switching in a few atomic layers of FeCo using voltage pulses
Y Shiota, T Nozaki, F Bonell, S Murakami, T Shinjo, Y Suzuki
Nature materials 11 (1), 39, 2012
5872012
Voltage-induced perpendicular magnetic anisotropy change in magnetic tunnel junctions
T Nozaki, Y Shiota, M Shiraishi, T Shinjo, Y Suzuki
Applied Physics Letters 96 (2), 022506, 2010
2322010
Voltage-assisted magnetization switching in ultrathin Fe80Co20 alloy layers
Y Shiota, T Maruyama, T Nozaki, T Shinjo, M Shiraishi, Y Suzuki
Applied Physics Express 2 (6), 063001, 2009
2122009
Electric-field-induced ferromagnetic resonance excitation in an ultrathin ferromagnetic metal layer
T Nozaki, Y Shiota, S Miwa, S Murakami, F Bonell, S Ishibashi, H Kubota, ...
Nature Physics 8 (6), 491, 2012
1812012
Large voltage-induced changes in the perpendicular magnetic anisotropy of an MgO-based tunnel junction with an ultrathin Fe layer
T Nozaki, A Kozioł-Rachwał, W Skowroński, V Zayets, Y Shiota, S Tamaru, ...
Physical Review Applied 5 (4), 044006, 2016
1202016
Large change in perpendicular magnetic anisotropy induced by an electric field in FePd ultrathin films
F Bonell, S Murakami, Y Shiota, T Nozaki, T Shinjo, Y Suzuki
Applied Physics Letters 98 (23), 232510, 2011
1132011
Quantitative evaluation of voltage-induced magnetic anisotropy change by magnetoresistance measurement
Y Shiota, S Murakami, F Bonell, T Nozaki, T Shinjo, Y Suzuki
Applied Physics Express 4 (4), 043005, 2011
1122011
Opposite signs of voltage-induced perpendicular magnetic anisotropy change in CoFeB| MgO junctions with different underlayers
Y Shiota, F Bonell, S Miwa, N Mizuochi, T Shinjo, Y Suzuki
Applied Physics Letters 103 (8), 082410, 2013
852013
Reversible change in the oxidation state and magnetic circular dichroism of Fe driven by an electric field at the FeCo/MgO interface
F Bonell, YT Takahashi, DD Lam, S Yoshida, Y Shiota, S Miwa, ...
Applied Physics Letters 102 (15), 152401, 2013
772013
Pulse voltage-induced dynamic magnetization switching in magnetic tunneling junctions with high resistance-area product
Y Shiota, S Miwa, T Nozaki, F Bonell, N Mizuochi, T Shinjo, H Kubota, ...
Applied Physics Letters 101 (10), 102406, 2012
672012
Voltage induced magnetic anisotropy change in ultrathin junctions with Brillouin light scattering
SS Ha, NH Kim, S Lee, CY You, Y Shiota, T Maruyama, T Nozaki, ...
Applied Physics Letters 96 (14), 142512, 2010
672010
Underlayer material influence on electric-field controlled perpendicular magnetic anisotropy in CoFeB/MgO magnetic tunnel junctions
W Skowroński, T Nozaki, DD Lam, Y Shiota, K Yakushiji, H Kubota, ...
Physical Review B 91 (18), 184410, 2015
632015
Spin-orbit torque in a bulk perpendicular magnetic anisotropy Pd/FePd/MgO system
HR Lee, K Lee, J Cho, YH Choi, CY You, MH Jung, F Bonell, Y Shiota, ...
Scientific reports 4, 6548, 2014
632014
Evaluation of write error rate for voltage-driven dynamic magnetization switching in magnetic tunnel junctions with perpendicular magnetization
Y Shiota, T Nozaki, S Tamaru, K Yakushiji, H Kubota, A Fukushima, ...
Applied Physics Express 9 (1), 013001, 2015
622015
Future prospects of MRAM technologies
S Yuasa, A Fukushima, K Yakushiji, T Nozaki, M Konoto, H Maehara, ...
2013 IEEE International Electron Devices Meeting, 3.1. 1-3.1. 4, 2013
612013
Voltage induction of interfacial Dzyaloshinskii–Moriya interaction in Au/Fe/MgO artificial multilayer
K Nawaoka, S Miwa, Y Shiota, N Mizuochi, Y Suzuki
Applied Physics Express 8 (6), 063004, 2015
542015
Perpendicular magnetic anisotropy of Ir/CoFeB/MgO trilayer system tuned by electric fields
W Skowroński, T Nozaki, Y Shiota, S Tamaru, K Yakushiji, H Kubota, ...
Applied Physics Express 8 (5), 053003, 2015
512015
Reduction in write error rate of voltage-driven dynamic magnetization switching by improving thermal stability factor
Y Shiota, T Nozaki, S Tamaru, K Yakushiji, H Kubota, A Fukushima, ...
Applied Physics Letters 111 (2), 022408, 2017
312017
Highly efficient voltage control of spin and enhanced interfacial perpendicular magnetic anisotropy in iridium-doped Fe/MgO magnetic tunnel junctions
T Nozaki, A Kozioł-Rachwał, M Tsujikawa, Y Shiota, X Xu, T Ohkubo, ...
NPG Asia Materials 9 (12), e451, 2017
292017
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–20