David Leadley
David Leadley
Verified email at warwick.ac.uk
Title
Cited by
Cited by
Year
Measurements of the effective mass and scattering times of composite fermions from magnetotransport analysis
DR Leadley, RJ Nicholas, CT Foxon, JJ Harris
Physical review letters 72 (12), 1906, 1994
2221994
Modification of the electron-phonon interactions in GaAs-GaAlAs heterojunctions
MA Brummell, RJ Nicholas, MA Hopkins, JJ Harris, CT Foxon
Physical review letters 58 (1), 77, 1987
1631987
Intersubband resonant scattering in GaAs-Ga 1− x Al x As heterojunctions
DR Leadley, R Fletcher, RJ Nicholas, F Tao, CT Foxon, JJ Harris
Physical Review B 46 (19), 12439, 1992
1231992
Fractional quantum Hall effect measurements at zero g factor
DR Leadley, RJ Nicholas, DK Maude, AN Utjuzh, JC Portal, JJ Harris, ...
Physical review letters 79 (21), 4246, 1997
1171997
Critical collapse of the exchange-enhanced spin splitting in two-dimensional systems
DR Leadley, RJ Nicholas, JJ Harris, CT Foxon
Physical Review B 58 (19), 13036, 1998
1031998
Ohmic contacts to n-type germanium with low specific contact resistivity
K Gallacher, P Velha, DJ Paul, I MacLaren, M Myronov, DR Leadley
Applied Physics Letters 100 (2), 022113, 2012
902012
Reverse graded relaxed buffers for high Ge content SiGe virtual substrates
VA Shah, A Dobbie, M Myronov, DJF Fulgoni, LJ Nash, DR Leadley
Applied Physics Letters 93 (19), 192103, 2008
792008
Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates
VA Shah, A Dobbie, M Myronov, DR Leadley
Journal of Applied Physics 107 (6), 064304, 2010
772010
High quality relaxed Ge layers grown directly on a Si (0 0 1) substrate
VA Shah, A Dobbie, M Myronov, DR Leadley
Solid-State Electronics 62 (1), 189-194, 2011
732011
Cyclotron phonon emission and electron energy loss rates in GaAs-GaAlAs heterojunctions
DR Leadley, RJ Nicholas, JJ Harris, CT Foxon
Semiconductor science and technology 4 (10), 879, 1989
701989
Ultra-high hole mobility exceeding one million in a strained germanium quantum well
A Dobbie, M Myronov, RJH Morris, AHA Hassan, MJ Prest, VA Shah, ...
Applied Physics Letters 101 (17), 172108, 2012
622012
Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon
L Lever, Y Hu, M Myronov, X Liu, N Owens, FY Gardes, IP Marko, ...
Optics letters 36 (21), 4158-4160, 2011
612011
Spin transport in germanium at room temperature
C Shen, T Trypiniotis, KY Lee, SN Holmes, R Mansell, M Husain, V Shah, ...
Applied Physics Letters 97 (16), 162104, 2010
612010
Modelling the inhomogeneous SiC Schottky interface
PM Gammon, A Pérez-Tomás, VA Shah, O Vavasour, E Donchev, ...
Journal of Applied Physics 114 (22), 223704, 2013
592013
Ge-on-Si single-photon avalanche diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm
RE Warburton, G Intermite, M Myronov, P Allred, DR Leadley, K Gallacher, ...
IEEE Transactions on Electron Devices 60 (11), 3807-3813, 2013
502013
Observation of microwave-induced resistance oscillations in a high-mobility two-dimensional hole gas in a strained Ge/SiGe quantum well
MA Zudov, OA Mironov, QA Ebner, PD Martin, Q Shi, DR Leadley
Physical Review B 89 (12), 125401, 2014
492014
Effect of layer thickness on structural quality of Ge epilayers grown directly on Si (001)
VA Shah, A Dobbie, M Myronov, DR Leadley
Thin Solid Films 519 (22), 7911-7917, 2011
462011
Influence of acoustic phonons on inter-subband scattering in GaAs-GaAlAs heterojunctions
DR Leadley, RJ Nicholas, JJ Harris, CT Foxon
Semiconductor science and technology 4 (10), 885, 1989
451989
High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth
RJH Morris, TJ Grasby, R Hammond, M Myronov, OA Mironov, ...
Semiconductor science and technology 19 (10), L106, 2004
442004
Application of Bryan’s algorithm to the mobility spectrum analysis of semiconductor devices
D Chrastina, JP Hague, DR Leadley
Journal of applied physics 94 (10), 6583-6590, 2003
422003
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