Gemma Rius
Gemma Rius
Ramon y Cajal Scientist @ IMB-CNM-CSIC
Correu electrònic verificat a
Citada per
Citada per
Anisotropic growth of long isolated graphene ribbons on the C face of graphite-capped 6 H-SiC
N Camara, JR Huntzinger, G Rius, A Tiberj, N Mestres, F Pérez-Murano, ...
Physical Review B 80 (12), 125410, 2009
Nanolithography on thin layers of PMMA using atomic force microscopy
C Martín, G Rius, X Borrisé, F Pérez-Murano
Nanotechnology 16 (8), 1016, 2005
Evaporation of femtoliter sessile droplets monitored with nanomechanical mass sensors
J Arcamone, E Dujardin, G Rius, F Perez-Murano, T Ondarcuhu
The Journal of Physical Chemistry B 111 (45), 13020-13027, 2007
Early stage formation of graphene on the C face of 6H-SiC
N Camara, G Rius, JR Huntzinger, A Tiberj, L Magaud, N Mestres, ...
Applied Physics Letters 93 (26), 263102, 2008
Selective epitaxial growth of graphene on SiC
N Camara, G Rius, JR Huntzinger, A Tiberj, N Mestres, P Godignon, ...
Applied Physics Letters 93 (12), 123503, 2008
High-resolution mapping of infraslow cortical brain activity enabled by graphene microtransistors
E Masvidal-Codina, X Illa, M Dasilva, AB Calia, T Dragojević, ...
Nature materials 18 (3), 280-288, 2019
Advances in the production, immobilization, and electrical characterization of olfactory receptors for olfactory nanobiosensor development
G Gomila, I Casuso, A Errachid, O Ruiz, E Pajot, J Minic, T Gorojankina, ...
Sensors and Actuators B: Chemical 116 (1-2), 66-71, 2006
Micro/nanomechanical resonators for distributed mass sensing with capacitive detection
J Arcamone, G Rius, G Abadal, J Teva, N Barniol, F Pérez-Murano
Microelectronic Engineering 83 (4-9), 1216-1220, 2006
Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review
M Cabello, V Soler, G Rius, J Montserrat, J Rebollo, P Godignon
Materials Science in Semiconductor Processing 78, 22-31, 2018
Submicron piezoresistive cantilevers in a CMOS-compatible technology for intermolecular force detection
G Villanueva, J Montserrat, F Pérez-Murano, G Rius, J Bausells
Microelectronic Engineering 73, 480-486, 2004
Effects of cap layer on ohmic Ti/Al contacts to Si+ implanted GaN
M Placidi, A Pérez-Tomás, A Constant, G Rius, N Mestres, J Millán, ...
Applied surface science 255 (12), 6057-6060, 2009
Using electron and ion beams on carbon nanotube-based devices. Effects and considerations for nanofabrication
G Rius, J Llobet, MJ Esplandiu, L Sole, X Borrise, F Perez-Murano
Microelectronic Engineering 86 (4-6), 892-894, 2009
Electron beam lithography for nanofabrication
G Rius Suñé
Universitat Autònoma de Barcelona,, 2008
Vertically aligned multi-walled carbon nanotube growth on platinum electrodes for bio-impedance applications
I Martin-Fernandez, G Gabriel, G Rius, R Villa, F Perez-Murano, ...
Microelectronic engineering 86 (4-6), 806-808, 2009
Electron-and ion-beam lithography for the fabrication of nanomechanical devices integrated on CMOS circuits
G Rius, J Llobet, J Arcamone, X Borrisé, F Pérez-Murano
Microelectronic engineering 86 (4-6), 1046-1049, 2009
Response of carbon nanotube transistors to electron beam exposure
G Rius, I Martín, P Godignon, A Bachtold, J Bausells, E Lora-Tamayo, ...
Microelectronic engineering 84 (5-8), 1596-1600, 2007
Nanostructuring of epitaxial graphene layers on SiC by means of field-induced atomic force microscopy modification
G Rius, N Camara, P Godignon, F Pérez-Murano, N Mestres
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
Remarkably stable high power Li-ion battery anodes based on vertically arranged multilayered-graphene
JR Nair, G Rius, P Jagadale, M Destro, M Tortello, M Yoshimura, ...
Electrochimica Acta 182, 500-506, 2015
Fabrication of complementary metal-oxide-semiconductor integrated nanomechanical devices by ion beam patterning
G Rius, J Llobet, X Borrisé, N Mestres, A Retolaza, S Merino, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
Electron beam lithography at 10 keV using an epoxy based high resolution negative resist
C Martin, G Rius, A Llobera, A Voigt, G Gruetzner, F Pérez-Murano
Microelectronic engineering 84 (5-8), 1096-1099, 2007
En aquests moments el sistema no pot dur a terme l'operació. Torneu-ho a provar més tard.
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