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Dr.-Ing. Kamran Forghani
Dr.-Ing. Kamran Forghani
UChicago, Northwestern, UW-Madison, Universität Ulm
Dirección de correo verificada de uchicago.edu
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Citado por
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Año
High quality AlGaN epilayers grown on sapphire using SiNx interlayers
K Forghani, M Klein, F Lipski, S Schwaiger, J Hertkorn, RAR Leute, ...
Journal of crystal growth 315 (1), 216-219, 2011
512011
Strain and defects in Si-doped (Al) GaN epitaxial layers
K Forghani, L Schade, UT Schwarz, F Lipski, O Klein, U Kaiser, F Scholz
Journal of Applied Physics 112 (9), 2012
502012
Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching
C Youtsey, R McCarthy, R Reddy, K Forghani, A Xie, E Beam, J Wang, ...
physica status solidi (b) 254 (8), 1600774, 2017
442017
TEM investigations on growth interrupted samples for the correlation of the dislocation propagation and growth mode variations in AlGaN deposited on SiNx interlayers
O Klein, J Biskupek, K Forghani, F Scholz, U Kaiser
Journal of crystal growth 324 (1), 63-72, 2011
422011
AlGaN-Based 355 nm UV light-emitting diodes with high power efficiency
R Gutt, T Passow, M Kunzer, W Pletschen, L Kirste, K Forghani, F Scholz, ...
Applied Physics Express 5 (3), 032101, 2012
392012
Composition dependent valence band order in c-oriented wurtzite AlGaN layers
FSMF B. Neuschl, J. Helbing, M. Knab, H. Lauer, M. Madel, K. Thonke, T ...
Journal of Applied Physics 116, 113506, 0
38*
Self-limiting growth when using trimethyl bismuth (TMBi) in the metal-organic vapor phase epitaxy (MOVPE) of GaAs1− yBiy
K Forghani, Y Guan, AW Wood, A Anand, SE Babcock, LJ Mawst, ...
Journal of crystal growth 395, 38-45, 2014
352014
GaAs1−y−zPyBiz, an alternative reduced band gap alloy system lattice-matched to GaAs
TFK Kamran Forghani, Yingxin Guan, Maria Losurdo, Guangfu Luo, Dane Morgan ...
Applied Physics Letter, 2014
322014
Properties of ‘bulk’GaAsSbN/GaAs for multi-junction solar cell application: Reduction of carbon background concentration
TW Kim, K Forghani, LJ Mawst, TF Kuech, SD LaLumondiere, Y Sin, ...
Journal of crystal growth 393, 70-74, 2014
302014
Low temperature growth of GaAs1− yBiy epitaxial layers
K Forghani, A Anand, LJ Mawst, TF Kuech
Journal of crystal growth 380, 23-27, 2013
272013
High resolution synchrotron X-ray studies of phase separation phenomena and the scaling law for the threading dislocation densities reduction in high quality AlGaN heterostructure
S Lazarev, S Bauer, K Forghani, M Barchuk, F Scholz, T Baumbach
Journal of crystal growth 370, 51-56, 2013
252013
Recent progress in epitaxial lift-off solar cells
AP Kirk, DW Cardwell, JD Wood, A Wibowo, K Forghani, D Rowell, N Pan, ...
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC)(A …, 2018
242018
Cathodoluminescence and photoluminescence study on AlGaN layers grown with SiNx interlayers
B Neuschl, KJ Fujan, M Feneberg, I Tischer, K Thonke, K Forghani, ...
Applied Physics Letters 97 (19), 2010
212010
Simulation supported analysis of the effect of SiNx interlayers in AlGaN on the dislocation density reduction
O Klein, J Biskupek, U Kaiser, K Forghani, SB Thapa, F Scholz
Journal of Physics: Conference Series 209 (1), 012018, 2010
212010
GaAs1− yBiy Raman signatures: illuminating relationships between the electrical and optical properties of GaAs1− yBiy and Bi incorporation
J Li, K Forghani, Y Guan, W Jiao, W Kong, K Collar, TH Kim, TF Kuech, ...
AIP Advances 5 (6), 2015
182015
Annealing-induced precipitate formation behavior in MOVPE-grown GaAs1− xBix explored by atom probe tomography and HAADF-STEM
AW Wood, W Chen, H Kim, Y Guan, K Forghani, A Anand, TF Kuech, ...
Nanotechnology 28 (21), 215704, 2017
172017
Study of threading dislocation density reduction in AlGaN epilayers by Monte Carlo simulation of high-resolution reciprocal-space maps of a two-layer system
S Lazarev, M Barchuk, S Bauer, K Forghani, V Holý, F Scholz, ...
Journal of Applied Crystallography 46 (1), 120-127, 2013
172013
In‐situ deposited SiNx nanomask for crystal quality improvement in AlGaN
K Forghani, M Gharavipour, M Klein, F Scholz, O Klein, U Kaiser, ...
physica status solidi c 8 (7‐8), 2063-2065, 2011
172011
The Effect of the Bi Precursors, (CH3)3Bi and (C2H5)3Bi, on the Metal‐Organic Vapor Phase Epitaxy of GaAs1‐yBiy Films
K Forghani, Y Guan, A Wood, S Babock, L Mawst, TF Kuech
Chemical Vapor Deposition 21 (7-8-9), 166-175, 2015
162015
Growth of GaAsBi by molecular beam epitaxy: Trade-offs in optical and structural characteristics
Jincheng Li (李瑾铖, Tong-Ho Kim, Kamran Forghani, Wenyuan Jiao (焦文苑, Wei ...
Journal of Applied Physics, 2014
152014
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