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José Luis Padilla de la Torre
José Luis Padilla de la Torre
Verified email at epfl.ch
Title
Cited by
Cited by
Year
Radiofrequency identification of wireless devices based on RF fingerprinting
P Padilla, JL Padilla, JF Valenzuela‐Valdés
Electronics letters 49 (22), 1409-1410, 2013
542013
Impact of quantum confinement on gate threshold voltage and subthreshold swings in double-gate tunnel FETs
JL Padilla, F Gamiz, A Godoy
IEEE transactions on electron devices 59 (12), 3205-3211, 2012
482012
Assessment of field-induced quantum confinement in heterogate germanium electron–hole bilayer tunnel field-effect transistor
JL Padilla, C Alper, F Gámiz, AM Ionescu
Applied Physics Letters 105 (8), 2014
472014
A Little Higgs model of neutrino masses
F Del Aguila, M Masip, JL Padilla
Physics Letters B 627 (1-4), 131-136, 2005
452005
A simple approach to quantum confinement in tunneling field-effect transistors
JL Padilla, F Gamiz, A Godoy
IEEE electron device letters 33 (10), 1342-1344, 2012
422012
RF fingerprint measurements for the identification of devices in wireless communication networks based on feature reduction and subspace transformation
JL Padilla, P Padilla, JF Valenzuela-Valdés, J Ramírez, JM Górriz
Measurement 58, 468-475, 2014
362014
Impact of Asymmetric Configurations on the Heterogate Germanium Electron-Hole Bilayer Tunnel FET Including Quantum Confinement
JL Padilla, C Alper, A Godoy, F Gámiz, AM Ionescu
IEEE Transactions on Electron Devices 62 (11), 2015
332015
Simulation of fabricated 20-nm Schottky barrier MOSFETs on SOI: Impact of barrier lowering
JL Padilla, L Knoll, F Gamiz, QT Zhao, A Godoy, S Mantl
IEEE transactions on electron devices 59 (5), 1320-1327, 2012
332012
An embedded lightweight folded printed quadrifilar helix antenna: UAV telemetry and remote control systems
JMF González, P Padilla, JF Valenzuela-Valdes, JL Padilla, ...
IEEE Antennas and Propagation Magazine 59 (3), 69-76, 2017
312017
Confinement-induced InAs/GaSb heterojunction electron–hole bilayer tunneling field-effect transistor
JL Padilla, C Medina-Bailon, C Alper, F Gamiz, AM Ionescu
Applied Physics Letters 112 (18), 2018
282018
Human neuro-activity for securing body area networks: Application of brain-computer interfaces to people-centric Internet of Things
JF Valenzuela-Valdes, MA Lopez, P Padilla, JL Padilla, J Minguillon
IEEE Communications Magazine 55 (2), 62-67, 2017
282017
The Electron-Hole Bilayer TFET: Dimensionality Effects and Optimization
C Alper, P Palestri, JL Padilla, AM Ionescu
IEEE Transactions on Electron Devices 63 (6), 2603 - 2609, 2016
252016
Electronically reconfigurable reflective phase shifter for circularly polarized reflectarray systems
P Padilla, JF Valenzuela-Valdés, JL Padilla, JM Fernández-González, ...
IEEE Microwave and Wireless Components Letters 26 (9), 705-707, 2016
232016
Two dimensional quantum mechanical simulation of low dimensional tunneling devices
C Alper, P Palestri, L Lattanzio, JL Padilla, AM Ionescu
Solid-State Electronics 113, 167-172, 2015
202015
The effect of quantum confinement on tunneling field-effect transistors with high-κ gate dielectric
JL Padilla, F Gámiz, A Godoy
Applied Physics Letters 103 (11), 2013
172013
Underlap counterdoping as an efficient means to suppress lateral leakage in the electron–hole bilayer tunnel FET
C Alper, P Palestri, JL Padilla, AM Ionescu
Semiconductor Science and Technology 31 (4), 045001, 2016
162016
Assessment of pseudo-bilayer structures in the heterogate germanium electron-hole bilayer tunnel field-effect transistor
JL Padilla, C Alper, C Medina-Bailón, F Gámiz, AM Ionescu
Applied Physics Letters 106 (26), 2015
162015
A novel reconfigurable sub-0.25-V digital logic family using the electron-hole bilayer TFET
C Alper, JL Padilla, P Palestri, AM Ionescu
IEEE Journal of the Electron Devices Society 6, 2-7, 2017
142017
MS-EMC vs. NEGF: A comparative study accounting for transport quantum corrections
C Medina-Bailon, C Sampedro, JL Padilla, A Godoy, L Donetti, F Gamiz, ...
2018 Joint International EUROSOI Workshop and International Conference on …, 2018
132018
Gate leakage tunneling impact on the InAs/GaSb heterojunction electron–Hole Bilayer tunneling field-effect transistor
JL Padilla, C Medina-Bailon, C Marquez, C Sampedro, L Donetti, F Gamiz, ...
IEEE Transactions on Electron Devices 65 (10), 4679-4686, 2018
112018
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