José Luis Padilla de la Torre
José Luis Padilla de la Torre
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Assessment of field-induced quantum confinement in heterogate germanium electron–hole bilayer tunnel field-effect transistor
JL Padilla, C Alper, F Gámiz, AM Ionescu
Applied Physics Letters 105 (8), 082108, 2014
422014
A little Higgs model of neutrino masses
F Del Aguila, M Masip, JL Padilla
Physics Letters B 627 (1-4), 131-136, 2005
412005
A simple approach to quantum confinement in tunneling field-effect transistors
JL Padilla, F Gamiz, A Godoy
IEEE electron device letters 33 (10), 1342-1344, 2012
352012
Impact of quantum confinement on gate threshold voltage and subthreshold swings in double-gate tunnel FETs
JL Padilla, F Gamiz, A Godoy
IEEE transactions on electron devices 59 (12), 3205-3211, 2012
322012
Radiofrequency identification of wireless devices based on RF fingerprinting
P Padilla, JL Padilla, JF Valenzuela-Valdes
Electronics Letters 49 (22), 1409-1410, 2013
272013
Simulation of fabricated 20-nm Schottky barrier MOSFETs on SOI: Impact of barrier lowering
JL Padilla, L Knoll, F Gámiz, QT Zhao, A Godoy, S Mantl
IEEE transactions on electron devices 59 (5), 1320-1327, 2012
222012
Impact of Asymmetric Configurations on the Heterogate Germanium Electron-Hole Bilayer Tunnel FET Including Quantum Confinement
JL Padilla, C Alper, A Godoy, F Gámiz, AM Ionescu
IEEE Transactions on Electron Devices 62 (11), 2015
172015
Two dimensional quantum mechanical simulation of low dimensional tunneling devices
C Alper, P Palestri, L Lattanzio, JL Padilla, AM Ionescu
Solid-State Electronics 113, 167-172, 2015
162015
RF fingerprint measurements for the identification of devices in wireless communication networks based on feature reduction and subspace transformation
JL Padilla, P Padilla, JF Valenzuela-Valdés, J Ramírez, JM Górriz
Measurement 58, 468-475, 2014
162014
Human neuro-activity for securing body area networks: Application of brain-computer interfaces to people-centric Internet of Things
JF Valenzuela-Valdes, MA Lopez, P Padilla, JL Padilla, J Minguillon
IEEE Communications Magazine 55 (2), 62-67, 2017
152017
Assessment of pseudo-bilayer structures in the heterogate germanium electron-hole bilayer tunnel field-effect transistor
JL Padilla, C Alper, C Medina-Bailón, F Gámiz, AM Ionescu
Applied Physics Letters 106 (26), 262102, 2015
152015
The effect of quantum confinement on tunneling field-effect transistors with high-κ gate dielectric
JL Padilla, F Gámiz, A Godoy
Applied Physics Letters 103 (11), 112105, 2013
132013
An Embedded Lightweight Folded Printed Quadrifilar Helix Antenna: UAV telemetry and remote control systems.
JMF González, P Padilla, JF Valenzuela-Valdes, JL Padilla, ...
IEEE Antennas and Propagation Magazine 59 (3), 69-76, 2017
122017
Electronically reconfigurable reflective phase shifter for circularly polarized reflectarray systems
P Padilla, JF Valenzuela-Valdés, JL Padilla, JM Fernández-González, ...
IEEE Microwave and Wireless Components Letters 26 (9), 705-707, 2016
122016
The Electron-Hole Bilayer TFET: Dimensionality Effects and Optimization
C Alper, P Palestri, JL Padilla, AM Ionescu
IEEE Transactions on Electron Devices 63 (6), 2603 - 2609, 2016
102016
Underlap counterdoping as an efficient means to suppress lateral leakage in the electron–hole bilayer tunnel FET
C Alper, P Palestri, JL Padilla, AM Ionescu
Semiconductor Science and Technology 31 (4), 045001, 2016
92016
Impact of device geometry of the fin electron-hole bilayer tunnel FET
C Alper, JL Padilla, P Palestri, AM Ionescu
2016 46th European Solid-State Device Research Conference (ESSDERC), 307-310, 2016
72016
High-frequency radiating element and modified 3 dB/90 electronic shifting circuit with circular polarisation for broadband reflectarray device cells
JL Padilla, P Padilla, JF Valenzuela-Valdés, JM Fernández-González
Electronics letters 50 (15), 1042-1043, 2014
72014
Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron–Hole Bilayer Tunneling Field-Effect Transistor
JL Padilla, C Medina-Bailon, C Marquez, C Sampedro, L Donetti, F Gamiz, ...
IEEE Transactions on Electron Devices 65 (10), 4679-4686, 2018
62018
MS-EMC vs. NEGF: A comparative study accounting for transport quantum corrections
C Medina-Bailon, C Sampedro, JL Padilla, A Godoy, L Donetti, F Gamiz, ...
2018 Joint International EUROSOI Workshop and International Conference on …, 2018
62018
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