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Dr. Sourav Roy
Dr. Sourav Roy
CHRIST (Deemed to be) University
Dirección de correo verificada de christuniversity.in - Página principal
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Conductive-bridging random access memory: challenges and opportunity for 3D architecture
D Jana, S Roy, R Panja, M Dutta, SZ Rahaman, R Mahapatra, S Maikap
Nanoscale research letters 10, 1-23, 2015
1012015
Toward a Reliable Synaptic Simulation Using Al-Doped HfO2 RRAM
S Roy, G Niu, Q Wang, Y Wang, Y Zhang, H Wu, S Zhai, P Shi, S Song, ...
ACS applied materials & interfaces 12 (9), 10648-10656, 2020
892020
Interface-engineered reliable HfO 2-based RRAM for synaptic simulation
Q Wang, G Niu, S Roy, Y Wang, Y Zhang, H Wu, S Zhai, W Bai, P Shi, ...
Journal of Materials Chemistry C 7 (40), 12682-12687, 2019
662019
Understanding of multi-level resistive switching mechanism in GeOx through redox reaction in H2O2/sarcosine prostate cancer biomarker detection
S Samanta, SZ Rahaman, A Roy, S Jana, S Chakrabarti, R Panja, S Roy, ...
Scientific Reports 7 (1), 11240, 2017
382017
Improved resistive switching phenomena and mechanism using Cu-Al alloy in a new Cu: AlOx/TaOx/TiN structure
S Roy, S Maikap, G Sreekanth, M Dutta, D Jana, YY Chen, JR Yang
Journal of Alloys and Compounds 637, 517-523, 2015
362015
Evolution of resistive switching mechanism through H2O2 sensing by using TaOx-based material in W/Al2O3/TaOx/TiN structure
S Chakrabarti, R Panja, S Roy, A Roy, S Samanta, M Dutta, S Ginnaram, ...
Applied Surface Science 433, 51-59, 2018
302018
Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO x /TiO x /TiN Structure
D Jana, S Samanta, S Roy, YF Lin, S Maikap
Nano-Micro Letters 7, 392-399, 2015
292015
Impact of device size and thickness of Al2O3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application
R Panja, S Roy, D Jana, S Maikap
Nanoscale research letters 9, 1-11, 2014
252014
Comparison of resistive switching characteristics by using e-gun/sputter deposited SiOx film in W/SiOx/TiN structure and pH/creatinine sensing through iridium electrode
S Roy, A Roy, R Panja, S Samanta, S Chakrabarti, PL Yu, S Maikap, ...
Journal of alloys and compounds 726, 30-40, 2017
162017
Reliable resistive switching of epitaxial single crystalline cubic Y-HfO2 RRAMs with Si as bottom electrodes
Y Wang, G Niu, Q Wang, S Roy, L Dai, H Wu, Y Sun, S Song, Z Song, ...
Nanotechnology 31 (20), 205203, 2020
132020
Oxide-Electrolyte Thickness Dependence Diode-Like Threshold Switching and High on/off Ratio Characteristics by Using Al2O3 Based CBRAM
A Senapati, S Roy, YF Lin, M Dutta, S Maikap
Electronics 9 (7), 1106, 2020
92020
Performance Analysis of K-Nearest Neighbor Classification Algorithms for Bank Loan Sectors
Hemachandran K , Preetha Mary George , R.V. Rodriguez, R.M. Kulkarni, Sourav Roy
Smart Intelligent Computing and Communication Technology 38 (9), 9-13, 2021
52021
Performance Improvement in E-Gun Deposited SiOx-Based RRAM Device by Switching Material Thickness Reduction
S Roy, S Maikap
Journal of Physics: Conference Series 2161 (1), 012040, 2022
22022
Novel IrOx/SiO2/W cross-point memory for lysyl-oxidase-like-2 (LOXL2) breast cancer biomarker detection
S Jana, S Samanta, S Roy, JT Qiu, S Maikap
2018 International Symposium on VLSI Technology, Systems and Application …, 2018
12018
Interface and Doping Engineering of HfO2 Based Multi-Level RRAM: Towards Synaptic Simulation for Neuromorphic Computation
S Roy, Q Wang, Y Wang, Y Zhang, S Zhai, W Ren, ZG Ye, G Niu
2019 International Conference on IC Design and Technology (ICICDT), 1-4, 2019
2019
Correction: Interface-engineered reliable HfO2-based RRAM for synaptic simulation (Journal of Materials Chemistry C (2019
Q Wang, G Niu, S Roy, Y Wang, Y Zhang, H Wu, S Zhai, W Bai, P Shi, ...
London [ua]: RSC, 2019
2019
Correction: Interface-engineered reliable HfO 2-based RRAM for synaptic simulation
Q Wang, G Niu, S Roy, Y Wang, Y Zhang, H Wu, S Zhai, W Bai, P Shi, ...
Journal of Materials Chemistry C 7 (42), 13307-13307, 2019
2019
Highly uniform and robust retention under 30 µA current operation by inserting ultrathin Al2O3 layer in TaOx-based RRAM
S Samanta, D Jana, S Chakrabarti, M Dutta, S Roy, R Mahapatra, ...
Improved switching characteristics using Cu-Al alloy in Cu/Cu-Al/Ta2O5/TiN CBRAM device
S Roy, G Sreekanth, M Dutta, D Jana, YY Chen, JR Yang, S Maikap
Resistive switching phenomena using Cu/Ta2O5/W structure and impact of 1T1R configuration
S Roy, D Jana, A Prakash, S Maikap
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–20