Seguir
Enrique G. Marin
Enrique G. Marin
Departamento Electrónica y Tecnología de Computadores. Universidad de Granada
Dirección de correo verificada de ugr.es
Título
Citado por
Citado por
Año
Transistor Concepts Based on Lateral Heterostructures of Metallic and Semiconducting Phases of MoS2
D Marian, E Dib, T Cusati, EG Marin, A Fortunelli, G Iannaccone, G Fiori
Physical Review Applied 8, 054047, 2017
382017
Ultralow specific contact resistivity in metal–graphene junctions via contact engineering
V Passi, A Gahoi, EG Marin, T Cusati, A Fortunelli, G Iannaccone, G Fiori, ...
Advanced Materials Interfaces 6 (1), 1801285, 2019
322019
A new holistic model of 2-D semiconductor FETs
EG Marin, SJ Bader, D Jena
IEEE Transactions on Electron Devices 65 (3), 1239-1245, 2018
322018
First-principles simulations of FETs based on two-dimensional InSe
EG Marin, D Marian, G Iannaccone, G Fiori
IEEE Electron Device Letters 39 (4), 626-629, 2018
302018
Analytic potential and charge model for III-V surrounding gate metal-oxide-semiconductor field-effect transistors
EG Marin, FG Ruiz, IM Tienda-Luna, A Godoy, P Sánchez-Moreno, ...
Journal of Applied Physics 112 (8), 084512, 2012
282012
First principles investigation of tunnel FETs based on nanoribbons from topological two-dimensional materials
EG Marin, D Marian, G Iannaccone, G Fiori
Nanoscale 9 (48), 19390-19397, 2017
262017
Lateral heterostructure field-effect transistors based on two-dimensional material stacks with varying thickness and energy filtering source
EG Marin, D Marian, M Perucchini, G Fiori, G Iannaccone
ACS nano 14 (2), 1982-1989, 2020
242020
Modeling of electron devices based on 2-D materials
EG Marin, M Perucchini, D Marian, G Iannaccone, G Fiori
IEEE Transactions on Electron Devices 65 (10), 4167-4179, 2018
242018
Reconfigurable Diodes Based on Vertical WSe2 Transistors with van der Waals Bonded Contacts
A Avsar, K Marinov, EG Marin, G Iannaccone, K Watanabe, T Taniguchi, ...
Advanced Materials 30 (18), 1707200, 2018
242018
Analytical gate capacitance modeling of III–V nanowire transistors
EG Marin, FJG Ruiz, IM Tienda-Luna, A Godoy, F Gamiz
IEEE transactions on electron devices 60 (5), 1590-1599, 2013
232013
Flexible one-dimensional metal–insulator–graphene diode
Z Wang, B Uzlu, M Shaygan, M Otto, M Ribeiro, EG Marín, G Iannaccone, ...
ACS Applied Electronic Materials 1 (6), 945-950, 2019
212019
Tunnel-field-effect spin filter from two-dimensional antiferromagnetic stanene
EG Marin, D Marian, G Iannaccone, G Fiori
Physical Review Applied 10 (4), 044063, 2018
182018
Laser-Beam-Patterned Topological Insulating States on Thin Semiconducting
H Mine, A Kobayashi, T Nakamura, T Inoue, S Pakdel, D Marian, ...
Physical Review Letters 123 (14), 146803, 2019
162019
Analytic drain current model for III–V cylindrical nanowire transistors
EG Marin, FG Ruiz, V Schmidt, A Godoy, H Riel, F Gámiz
Journal of Applied Physics 118 (4), 044502, 2015
162015
Mobility and capacitance comparison in scaled InGaAs vs Si Trigate MOSFETs
EG Marin, FG Garcia-Ruiz, A Godoy, IM Tienda-Luna, F Gamiz
Electron Device Letters 36 (2), 114 - 116, 2015
142015
Impact of the Back-Gate Biasing on Trigate MOSFET Electron Mobility
EG Marin, FG Ruiz, A Godoy, IM Tienda-Luna, C Martinez-Blanque, ...
Electron Devices, IEEE Transactions on 62 (1), 224 - 227, 2015
142015
Modeling of quantum confinement and capacitance in III–V gate-all-around 1-D transistors
MD Ganeriwala, C Yadav, FG Ruiz, EG Marin, YS Chauhan, ...
IEEE Transactions on Electron Devices 64 (12), 4889-4896, 2017
132017
Simulation study of the electron mobility in few-layer MoS2 metal–insulator-semiconductor field-effect transistors
JM Gonzalez-Medina, FG Ruiz, EG Marin, A Godoy, F Gámiz
Solid-State Electronics 114, 30-34, 2015
112015
Large-signal model of 2DFETs: Compact modeling of terminal charges and intrinsic capacitances
F Pasadas, EG Marin, A Toral-Lopez, FG Ruiz, A Godoy, S Park, ...
npj 2D Materials and Applications 3 (1), 1-7, 2019
102019
A graphene field-effect transistor based analogue phase shifter for high-frequency applications
A Medina-Rull, F Pasadas, EG Marin, A Toral-Lopez, J Cuesta, A Godoy, ...
IEEE Access 8, 209055-209063, 2020
82020
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–20