Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors M Randle, A Lipatov, A Kumar, CP Kwan, J Nathawat, B Barut, S Yin, ...
ACS nano 13 (1), 803-811, 2018
62 2018 Space-charge limited conduction in epitaxial chromia films grown on elemental and oxide-based metallic substrates CP Kwan, M Street, A Mahmood, W Echtenkamp, M Randle, K He, ...
AIP Advances 9 (5), 2019
45 2019 Evidence for a thermally driven charge-density-wave transition in 1T-TaS2 thin-film devices: Prospects for GHz switching speed A Mohammadzadeh, S Baraghani, S Yin, F Kargar, JP Bird, AA Balandin
Applied Physics Letters 118 (9), 2021
30 2021 Transient hot-carrier dynamics and intrinsic velocity saturation in monolayer J Nathawat, KKH Smithe, CD English, S Yin, R Dixit, M Randle, ...
Physical review materials 4 (1), 014002, 2020
24 2020 Transient response of h-BN-encapsulated graphene transistors: signatures of self-heating and hot-carrier trapping J Nathawat, M Zhao, CP Kwan, S Yin, N Arabchigavkani, M Randle, ...
ACS omega 4 (2), 4082-4090, 2019
16 2019 Asymmetrically engineered nanoscale transistors for on-demand sourcing of terahertz plasmons B Barut, X Cantos-Roman, J Crabb, CP Kwan, R Dixit, N Arabchigavkani, ...
Nano Letters 22 (7), 2674-2681, 2022
7 2022 Nonvolatile Memory Action Due to Hot-Carrier Charge Injection in Graphene-on-Parylene Transistors S Yin, JG Gluschke, AP Micolich, J Nathawat, B Barut, R Dixit, ...
ACS Applied Electronic Materials 1 (11), 2260-2267, 2019
7 2019 Graphene on Chromia: A System for Beyond‐Room‐Temperature Spintronics K He, B Barut, S Yin, MD Randle, R Dixit, N Arabchigavkani, J Nathawat, ...
Advanced Materials 34 (12), 2105023, 2022
6 2022 Probing the Dynamics of Electric Double Layer Formation over Wide Time Scales (10–9 –10+5 s) in the Ionic Liquid DEME-TFSI S Yin, K He, MD Randle, B Barut, R Dixit, A Lipatov, A Sinitskii, JP Bird
The Journal of Physical Chemistry C 126 (4), 1958-1965, 2022
6 2022 Pulsed studies of intervalley transfer in R Dixit, B Barut, S Yin, J Nathawat, M Randle, N Arabchigavkani, K He, ...
Physical Review Materials 4 (8), 085404, 2020
5 2020 Universal scaling of weak localization in graphene due to bias-induced dispersion decoherence R Somphonsane, H Ramamoorthy, G He, J Nathawat, S Yin, CP Kwan, ...
Scientific reports 10 (1), 5611, 2020
5 2020 Building the quasi one dimensional transistor from 2D materials PV Galiy, M Randle, A Lipatov, L Wang, S Gilbert, N Vorobeva, A Kumar, ...
2019 IEEE 2nd Ukraine Conference on Electrical and Computer Engineering …, 2019
5 2019 Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene J Nathawat, I Mansaray, K Sakanashi, N Wada, MD Randle, S Yin, K He, ...
Nature Communications 14 (1), 1507, 2023
4 2023 Remote Mesoscopic Signatures of Induced Magnetic Texture in Graphene N Arabchigavkani, R Somphonsane, H Ramamoorthy, G He, J Nathawat, ...
Physical Review Letters 126 (8), 086802, 2021
2 2021 Graphene on Chromia: A System for Beyond‐Room‐Temperature Spintronics (Adv. Mater. 12/2022) K He, B Barut, S Yin, MD Randle, R Dixit, N Arabchigavkani, J Nathawat, ...
Advanced Materials 34 (12), 2270097, 2022
1 2022 Universal voltage scaling due to self-averaging of the quantum corrections in graphene R Somphonsane, H Ramamoorthy, G He, J Nathawat, S Yin, JP Bird, ...
arXiv preprint arXiv:1802.09922, 2018
1 2018 Probing the Dynamics of Electric Double Layer Formation over Wide Time Scales (10–⁹–10⁺ ⁵ s) in the Ionic Liquid DEME-TFSI S Yin, K He, MD Randle, B Barut, R Dixit, A Lipatov, A Sinitskii, JP Bird
2022 Transient Investigations of High-Field Conduction in Low-Dimensional Materials S Yin
State University of New York at Buffalo, 2022
2022 Nanoscale Transistors for On-Chip Sourcing of Terahertz Plasmons B Barut, X Cantos-Roman, J Crabb, CP Kwan, R Dixit, N Arabchigavkani, ...
JSAP-OSA Joint Symposia, 11p_N404_7, 2021
2021 Evidence for a thermally driven charge-density-wave transition in 1T-TaS A Mohammadzadeh, S Baraghani, S Yin, F Kargar, JP Bird, AA Balandin
2021 