Parameterization of the optical functions of amorphous materials in the interband region GE Jellison Jr, FA Modine
Applied Physics Letters 69 (3), 371-373, 1996
2796 * 1996 A stable thin‐film lithium electrolyte: lithium phosphorus oxynitride X Yu, JB Bates, GE Jellison, FX Hart
Journal of the electrochemical society 144 (2), 524, 1997
1061 1997 Spectroscopic ellipsometry data analysis: measured versus calculated quantities GE Jellison Jr
Thin solid films 313, 33-39, 1998
430 1998 Data analysis for spectroscopic ellipsometry GE Jellison
Handbook of Ellipsometry, 237-296, 2005
428 2005 Optical functions of silicon determined by two-channel polarization modulation ellipsometry GE Jellison Jr
Optical Materials 1 (1), 41-47, 1992
372 1992 Optical absorption of silicon between 1.6 and 4.7 eV at elevated temperatures GE Jellison Jr, FA Modine
Applied Physics Letters 41 (2), 180-182, 1982
357 1982 Spectroscopic ellipsometry of thin film and bulk anatase GE Jellison Jr, LA Boatner, JD Budai, BS Jeong, DP Norton
Journal of Applied Physics 93 (12), 9537-9541, 2003
310 2003 Optical functions of chemical vapor deposited thin‐film silicon determined by spectroscopic ellipsometry GE Jellison Jr, MF Chisholm, SM Gorbatkin
Applied physics letters 62 (25), 3348-3350, 1993
310 1993 Magnetic behavior and spin-lattice coupling in cleavable van der Waals layered crystals MA McGuire, G Clark, KC Santosh, WM Chance, GE Jellison Jr, ...
Physical Review Materials 1 (1), 014001, 2017
298 2017 Optical functions of silicon between 1.7 and 4.7 eV at elevated temperatures GE Jellison Jr, FA Modine
Physical Review B 27 (12), 7466, 1983
289 1983 Wide bandgap tunability in complex transition metal oxides by site-specific substitution WS Choi, MF Chisholm, DJ Singh, T Choi, GE Jellison Jr, HN Lee
Nature communications 3 (1), 689, 2012
284 2012 Optical functions of uniaxial ZnO determined by generalized ellipsometry GE Jellison, LA Boatner
Physical Review B 58 (7), 3586, 1998
281 1998 Determinations of structure and bonding in vitreous B2 O3 by means of B10 , B11 , and O17 NMR GE Jellison Jr, LW Panek, PJ Bray, GB Rouse Jr
The Journal of Chemical Physics 66 (2), 802-812, 1977
271 1977 Two-modulator generalized ellipsometry: theory GE Jellison, FA Modine
Applied optics 36 (31), 8190-8198, 1997
248 1997 Optical functions of silicon at elevated temperatures GE Jellison Jr, FA Modine
Journal of Applied Physics 76 (6), 3758-3761, 1994
238 1994 Optical functions of GaAs, GaP, and Ge determined by two-channel polarization modulation ellipsometry GE Jellison Jr
Optical Materials 1 (3), 151-160, 1992
235 1992 Two-modulator generalized ellipsometry: experiment and calibration GE Jellison, FA Modine
Applied optics 36 (31), 8184-8189, 1997
233 1997 Optical constants for silicon at 300 and 10 K determined from 1.64 to 4.73 eV by ellipsometry GE Jellison Jr, FA Modine
Journal of Applied Physics 53 (5), 3745-3753, 1982
224 1982 Characterization and optimization of absorbing plasma-enhanced chemical vapor deposited antireflection coatings for silicon photovoltaics P Doshi, GE Jellison, A Rohatgi
Applied optics 36 (30), 7826-7837, 1997
206 1997 Time-resolved reflectivity measurements on silicon and germanium using a pulsed excimer KrF laser heating beam GE Jellison Jr, DH Lowndes, DN Mashburn, RF Wood
Physical Review B 34 (4), 2407, 1986
203 1986