Giuseppe Moschetti
Giuseppe Moschetti
RF & Microwave Specialist, Qamcom Research and Technology AB
Dirección de correo verificada de qamcom.se
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A 183 GHz metamorphic HEMT low-noise amplifier with 3.5 dB noise figure
G Moschetti, A Leuther, H Maßler, B Aja, M Rösch, M Schlechtweg, ...
IEEE Microwave and Wireless Components Letters 25 (9), 618-620, 2015
352015
Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors
BG Vasallo, H Rodilla, T González, G Moschetti, J Grahn, J Mateos
Journal of Applied Physics 108 (9), 094505, 2010
262010
Cryogenic InAs/AlSb HEMT wideband low-noise IF amplifier for ultra-low-power applications
G Moschetti, N Wadefalk, PÅ Nilsson, M Abbasi, L Desplanque, X Wallart, ...
IEEE microwave and wireless components letters 22 (3), 144-146, 2012
252012
Sb-HEMT: toward 100-mV cryogenic electronics
A Noudeviwa, Y Roelens, F Danneville, A Olivier, N Wichmann, ...
IEEE transactions on electron devices 57 (8), 1903-1909, 2010
212010
Anisotropic transport properties in InAs/AlSb heterostructures
G Moschetti, H Zhao, PÅ Nilsson, S Wang, A Kalabukhov, G Dambrine, ...
Applied Physics Letters 97 (24), 243510, 2010
202010
InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation
G Moschetti, N Wadefalk, Y Roelens, A Noudeviwa, L Desplanque, ...
Solid-state electronics 64 (1), 47-53, 2011
192011
Planar InAs/AlSb HEMTs with ion-implanted isolation
G Moschetti, PÅ Nilsson, A Hallen, L Desplanque, X Wallart, J Grahn
IEEE electron device letters 33 (4), 510-512, 2012
152012
AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs
L Desplanque, S El Kazzi, JL Codron, Y Wang, P Ruterana, G Moschetti, ...
Applied Physics Letters 100 (26), 262103, 2012
142012
Two-finger InP HEMT design for stable cryogenic operation of ultra-low-noise Ka-and Q-band LNAs
E Cha, G Moschetti, N Wadefalk, PÅ Nilsson, S Bevilacqua, ...
IEEE Transactions on Microwave Theory and Techniques 65 (12), 5171-5180, 2017
132017
Kink effect and noise performance in isolated-gate InAs/AlSb high electron mobility transistors
BG Vasallo, H Rodilla, T González, G Moschetti, J Grahn, J Mateos
Semiconductor Science and Technology 27 (6), 065018, 2012
132012
Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs
H Rodilla, T González, G Moschetti, J Grahn, J Mateos
Semiconductor Science and Technology 26 (2), 025004, 2010
112010
Stability investigation of large gate-width metamorphic high electron-mobility transistors at cryogenic temperature
G Moschetti, F Thome, M Ohlrogge, J Goliasch, F Schäfer, B Aja, ...
IEEE Transactions on Microwave Theory and Techniques 64 (10), 3139-3150, 2016
102016
0.3–14 and 16–28 GHz Wide-Bandwidth Cryogenic MMIC Low-Noise Amplifiers
E Cha, N Wadefalk, PÅ Nilsson, J Schleeh, G Moschetti, A Pourkabirian, ...
IEEE Transactions on Microwave Theory and Techniques 66 (11), 4860-4869, 2018
82018
Cryogenic W-band LNA for ALMA band 2+ 3 with average noise temperature of 24 K
Y Tang, N Wadefalk, JW Kooi, J Schleeh, G Moschetti, PÅ Nilsson, ...
2017 IEEE MTT-S International Microwave Symposium (IMS), 176-179, 2017
82017
DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiNx-film for early-protection against oxidation
G Moschetti, E Lefebvre, M Fagerlind, PÅ Nilsson, L Desplanque, ...
Solid-state electronics 87, 85-89, 2013
82013
DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures
G Moschetti, PA Nilsson, N Wadefalk, M Malmkvist, E Lefebvre, J Grahn, ...
2009 IEEE International Conference on Indium Phosphide & Related Materials …, 2009
82009
Cryogenic LNAs for SKA band 2 to 5
J Schleeh, G Moschetti, N Wadefalk, E Cha, A Pourkabirian, G Alestig, ...
2017 IEEE MTT-S International Microwave Symposium (IMS), 164-167, 2017
62017
Fabrication and DC characterization of InAs/AlSb self-switching diodes
A Westlund, G Moschetti, H Zhao, PÅ Nilsson, J Grahn
2012 International Conference on Indium Phosphide and Related Materials, 65-68, 2012
52012
Low noise amplifiers for MetOp-SG
M Rösch, A Tessmann, A Leuther, R Weber, G Moschetti, B Aja, ...
2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on …, 2016
42016
Broadband low-noise GaN HEMT TWAs using an active distributed drain bias circuit
F Van Raay, R Quay, B Aja, G Moschetti, M Seelmann-Eggebert, ...
2015 10th European Microwave Integrated Circuits Conference (EuMIC), 156-159, 2015
42015
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–20