Reconfigurable pn junction diodes and the photovoltaic effect in exfoliated MoS2 films S Sutar, P Agnihotri, E Comfort, T Taniguchi, K Watanabe, J Ung Lee
Applied Physics Letters 104 (12), 2014
60 2014 Bipolar Junction Transistors in Two-Dimensional WSe2 with Large Current and Photocurrent Gains P Agnihotri, P Dhakras, JU Lee
Nano letters 16 (7), 4355-4360, 2016
57 2016 Edge-state transport in graphene junctions in the quantum Hall regime NN Klimov, ST Le, J Yan, P Agnihotri, E Comfort, JU Lee, DB Newell, ...
Physical Review B 92 (24), 241301, 2015
53 2015 Analysis of the two-dimensional Datta–Das spin field effect transistor P Agnihotri, S Bandyopadhyay
Physica E: Low-dimensional Systems and Nanostructures 42 (5), 1736-1740, 2010
35 2010 Design and growth of visible-blind and solar-blind III-N APDs on sapphire substrates P Suvarna, M Tungare, JM Leathersich, P Agnihotri, ...
Journal of electronic materials 42, 854-858, 2013
26 2013 Atomic-scale characterization of graphene p–n junctions for electron-optical applications X Zhou, A Kerelsky, MM Elahi, D Wang, KMM Habib, RN Sajjad, ...
ACS nano 13 (2), 2558-2566, 2019
18 2019 Boson stars with repulsive self-interactions P Agnihotri, J Schaffner-Bielich, IN Mishustin
Physical Review D 79 (8), 084033, 2009
18 2009 Three fundamental devices in one: a reconfigurable multifunctional device in two-dimensional WSe2 P Dhakras, P Agnihotri, JU Lee
Nanotechnology 28 (26), 265203, 2017
12 2017 TID Effects in Reconfigurable MOSFETs Using 2-D Semiconductor WSe2 P Dhakras, P Agnihotri, H Bakhru, HL Hughes, JU Lee
IEEE Transactions on Nuclear Science 65 (1), 53-57, 2017
9 2017 Reverse degradation of nickel graphene junction by hydrogen annealing Z Zhang, F Yang, P Agnihotri, JU Lee, JR Lloyd
AIP Advances 6 (2), 2016
8 2016 A self-assembled room temperature nanowire infrared photodetector based on quantum mechanical wavefunction engineering S Bandyopadhyay, P Agnihotri, S Bandyopadhyay
Physica E: Low-dimensional Systems and Nanostructures 44 (7-8), 1478-1485, 2012
7 2012 Quantitative model of CMOS inverter chain ring oscillator's effective capacitance and its improvements in 14nm FinFET technology SY Mun, J Cho, B Zhu, P Agnihotri, CY Wong, TJ Lee, V Mahajan, BW Liu, ...
2018 IEEE International Conference on Microelectronic Test Structures (ICMTS), 2018
5 2018 Room temperature nanowire IR, visible and UV photodetectors S Bandyopadhyay, S Bandyopadhyay, P Agnihotri
US Patent 8,946,678, 2015
4 2015 Spin dynamics and spin noise in the presence of randomly varying spin–orbit interaction in a semiconductor quantum wire P Agnihotri, S Bandyopadhyay
Journal of Physics: Condensed Matter 24 (21), 215302, 2012
4 2012 Ion-Implantation-Induced Damage Characteristics Within AlN and Si for GaN-on-Si Epitaxy JM Leathersich, M Tungare, X Weng, P Suvarna, P Agnihotri, M Evans, ...
Journal of electronic materials 42, 833-837, 2013
2 2013 Nearly Universal Spectrum of Mobility Fluctuation Noise in a Quantum Wire at Radio and Microwave Frequencies P Agnihotri, S Bandyopadhyay
IEEE transactions on electron devices 57 (11), 3101-3105, 2010
1 2010 Reconfigurable WSe device: three fundamental devices in one. P Dhakras, P Agnihotri, JU Lee
Bulletin of the American Physical Society 62, 2017
2017 Reconfigurable WSe2 device: three fundamental devices in one P Dhakras, P Agnihotri, JU Lee
APS March Meeting Abstracts 2017, B32. 002, 2017
2017 Novel two-dimensional devices for future applications P Agnihotri
2016 Atomic-scaled characterization of graphene PN junctions X Zhou, D Wang, A Dadgar, P Agnihotri, JU Lee, MC Reuter, FM Ross, ...
APS March Meeting Abstracts 2016, H16. 012, 2016
2016