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Rasik Rashid Malik
Rasik Rashid Malik
PhD Student, IISc Bangalore
Dirección de correo verificada de iisc.ac.in
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Modeling and analysis of double channel GaN HEMTs using a physics-based analytical model
RR Malik, MA Mir, Z Bhat, A Pampori, YS Chauhan, SA Ahsan
IEEE Journal of the Electron Devices Society 9, 789-797, 2021
52021
Signatures of positive gate over-drive induced hole trap generation and its impact on p-GaN gate stack instability in AlGaN/GaN HEMTs
RR Malik, V Joshi, RR Chaudhuri, MA Mir, Z Khan, AN Shaji, ...
2023 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2023
22023
Dynamic Interplay of Surface and Buffer Traps in Determining Drain Current Injection induced Device Instability in OFF-state of AlGaN/GaN HEMTs
MA Mir, V Joshi, RR Chaudhuri, MA Munshi, RR Malik, M Shrivastava
2023 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2023
22023
Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic RON Behavior in AlGaN/GaN HEMTs—Part II
RR Chaudhuri, A Gupta, V Joshi, RR Malik, SD Gupta, M Shrivastava
IEEE Transactions on Electron Devices 70 (12), 6183-6189, 2023
12023
Unique lattice temperature dependent evolution of hot electron distribution in GaN HEMTs on C-doped GaN buffer and its reliability consequences
RR Chaudhuri, V Joshi, A Gupta, T Joshi, RR Malik, MA Mir, SD Gupta, ...
2023 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2023
12023
Physical Insights Into the Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-Doped GaN-on-Si
RR Chaudhuri, V Joshi, RR Malik, M Shrivastava
IEEE Transactions on Electron Devices, 2023
2023
Physical Insights Into Nano-Second Time Scale Cyclic Stress Induced Dynamic Behavior in AlGaN/GaN HEMTs—Part I
RR Chaudhuri, A Gupta, V Joshi, RR Malik, SD Gupta, M Shrivastava
IEEE Transactions on Electron Devices, 2023
2023
Reverse Bias Stress-Induced Turn-On Voltage Shift in Recessed AlGaN/GaN Schottky Barrier Diodes
RR Malik, V Joshi, RR Chaudhuri, SD Gupta, M Shrivastava
IEEE Transactions on Electron Devices, 2023
2023
Understanding Temperature Dependence of ESD Reliability in AlGaN/GaN HEMTs
MA Munshi, MA Mir, R Malik, V Joshi, RR Chaudhuri, Z Khan, ...
2023 45th Annual EOS/ESD Symposium (EOS/ESD), 1-5, 2023
2023
Interplay of Surface Passivation and Electric Field in Determining ESD Behaviour of p-GaN Gated AlGaN/GaN HEMTs
RR Malik, AN Shaji, Z Khan, M Bhattacharya, MA Munshi, RR Chaudhuri, ...
2023 45th Annual EOS/ESD Symposium (EOS/ESD), 1-7, 2023
2023
Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic $\textit {R} _ {\bio {ON}} $ Behavior in AlGaN/GaN HEMTs—Part II
RR Chaudhuri, A Gupta, V Joshi, RR Malik, SD Gupta, M Shrivastava
IEEE Transactions on Electron Devices, 2023
2023
Physical Insights into the DC and Transient Reverse Bias Reliability of β-Ga2O3 Based Vertical Schottky Barrier Diodes
H Raj, V Joshi, RR Chaudhuri, RR Malik, M Shrivastava
2023 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2023
2023
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