Metal oxide resistive memory switching mechanism based on conductive filament properties G Bersuker, DC Gilmer, D Veksler, P Kirsch, L Vandelli, A Padovani, ...
Journal of Applied Physics 110 (12), 2011
543 2011 Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures M Lanza, K Zhang, M Porti, M Nafría, ZY Shen, LF Liu, JF Kang, D Gilmer, ...
Applied Physics Letters 100 (12), 2012
229 2012 Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries M Lanza, G Bersuker, M Porti, E Miranda, M Nafría, X Aymerich
Applied Physics Letters 101 (19), 2012
202 2012 Emerging yield and reliability challenges in nanometer CMOS technologies G Gielen, P De Wit, E Maricau, J Loeckx, J Martin-Martinez, B Kaczer, ...
Proceedings of the conference on Design, automation and test in Europe, 1322 …, 2008
188 2008 Metal oxide RRAM switching mechanism based on conductive filament microscopic properties G Bersuker, DC Gilmer, D Veksler, J Yum, H Park, S Lian, L Vandelli, ...
2010 International Electron Devices Meeting, 19.6. 1-19.6. 4, 2010
163 2010 Grain boundary-driven leakage path formation in HfO2 dielectrics G Bersuker, J Yum, L Vandelli, A Padovani, L Larcher, V Iglesias, M Porti, ...
Solid-State Electronics 65, 146-150, 2011
155 2011 Grain boundary mediated leakage current in polycrystalline HfO2 films K McKenna, A Shluger, V Iglesias, M Porti, M Nafría, M Lanza, G Bersuker
Microelectronic Engineering 88 (7), 1272-1275, 2011
124 2011 Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics E Miranda, J Suñé, R Rodríguez, M Nafria, X Aymerich, L Fonseca, ...
IEEE Transactions on Electron Devices 47 (1), 82-89, 2000
121 2000 Exploratory observations of post‐breakdown conduction in polycrystalline‐silicon and metal‐gated thin‐oxide metal‐oxide‐semiconductor capacitors M Nafria, J Suñé, X Aymerich
Journal of Applied Physics 73 (1), 205-215, 1993
95 1993 Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries O Pirrotta, L Larcher, M Lanza, A Padovani, M Porti, M Nafría, G Bersuker
Journal of Applied Physics 114 (13), 2013
91 2013 A function-fit model for the soft breakdown failure mode E Miranda, J Sune, R Rodriguez, M Nafria, X Aymerich
IEEE Electron Device Letters 20 (6), 265-267, 1999
91 1999 Probabilistic defect occupancy model for NBTI J Martin-Martinez, B Kaczer, M Toledano-Luque, R Rodriguez, M Nafria, ...
2011 International Reliability Physics Symposium, XT. 4.1-XT. 4.6, 2011
87 2011 Point contact conduction at the oxide breakdown of MOS devices J Sune, E Miranda, M Nafria, X Aymerich
International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998
85 1998 New weighted time lag method for the analysis of random telegraph signals J Martin-Martinez, J Diaz, R Rodriguez, M Nafria, X Aymerich
IEEE Electron Device Letters 35 (4), 479-481, 2014
74 2014 Correlation between the nanoscale electrical and morphological properties of crystallized hafnium oxide-based metal oxide semiconductor structures V Iglesias, M Porti, M Nafría, X Aymerich, P Dudek, T Schroeder, ...
Applied physics letters 97 (26), 2010
72 2010 Nanometer-scale electrical characterization of stressed ultrathin M Porti, M Nafrı́a, X Aymerich, A Olbrich, B Ebersberger
Applied Physics Letters 78 (26), 4181-4183, 2001
72 2001 Soft breakdown fluctuation events in ultrathin E Miranda, J Suñé, R Rodriguez, M Nafria, X Aymerich
Applied physics letters 73 (4), 490-492, 1998
71 1998 Graphene-coated atomic force microscope tips for reliable nanoscale electrical characterization. M Lanza, A Bayerl, T Gao, M Porti, M Nafria, GY Jing, YF Zhang, ZF Liu, ...
Advanced Materials (Deerfield Beach, Fla.) 25 (10), 1440-1444, 2012
70 2012 Tuning graphene morphology by substrate towards wrinkle-free devices: Experiment and simulation M Lanza, Y Wang, A Bayerl, T Gao, M Porti, M Nafria, H Liang, G Jing, ...
Journal of Applied Physics 113 (10), 2013
68 2013 Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN A Fontserè, A Pérez-Tomás, M Placidi, J Llobet, N Baron, S Chenot, ...
Applied Physics Letters 99 (21), 2011
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