Effect of program error in memristive neural network with weight quantization TH Kim, S Kim, K Hong, J Park, S Youn, JH Lee, BG Park, H Kim IEEE Transactions on Electron Devices 69 (6), 3151-3157, 2022 | 21 | 2022 |
Incremental drain-voltage-ramping training method for ferroelectric field-effect transistor synaptic devices MC Nguyen, K Lee, S Kim, S Youn, Y Hwang, H Kim, R Choi, D Kwon IEEE Electron Device Letters 43 (1), 17-20, 2021 | 19 | 2021 |
Intrinsic variation effect in memristive neural network with weight quantization J Park, MS Song, S Youn, TH Kim, S Kim, K Hong, H Kim Nanotechnology 33 (37), 375203, 2022 | 13 | 2022 |
Effect of Hydrogen Migration in SiO2/Al2O3 Stacked Gate Insulator of InGaZnO Thin-Film Transistors S Park, S Youn, JT Jang, H Kim, DH Kim Crystals 12 (5), 594, 2022 | 4 | 2022 |
Implementation of Convolutional Neural Networks in Memristor Crossbar Arrays with Binary Activation and Weight Quantization J Park, S Kim, MS Song, S Youn, K Kim, TH Kim, H Kim ACS Applied Materials & Interfaces 16 (1), 1054-1065, 2024 | 3 | 2024 |
Low-fluctuation nonlinear model using incremental step pulse programming with memristive devices GH Lee, TH Kim, S Youn, J Park, S Kim, H Kim Chaos, Solitons & Fractals 170, 113359, 2023 | 3 | 2023 |
Fuse devices for pruning in memristive neural network TH Kim, K Hong, S Kim, J Park, S Youn, JH Lee, BG Park, H Kim, WY Choi IEEE Electron Device Letters 44 (3), 520-523, 2023 | 3 | 2023 |
Memristor Crossbar Circuit for Ternary Content‐Addressable Memory with Fine‐Tuning Operation S Youn, S Kim, TH Kim, J Park, H Kim Advanced Intelligent Systems, 2200325, 2023 | 3 | 2023 |
Multibit, Lead‐Free Cs2SnI6 Resistive Random Access Memory with Self‐Compliance for Improved Accuracy in Binary Neural Network Application A Kumar, M Krishnaiah, J Park, D Mishra, B Dash, HB Jo, G Lee, S Youn, ... Advanced Functional Materials, 2310780, 2023 | 2 | 2023 |
Highly Reliable Physical Unclonable Functions using Memristor Crossbar with Tunneling Conduction J Park, TH Kim, S Kim, MS Song, S Youn, K Hong, BG Park, H Kim 2022 International Electron Devices Meeting (IEDM), 18.3. 1-18.3. 4, 2022 | 2 | 2022 |
Threshold learning algorithm for memristive neural network with binary switching behavior S Youn, Y Hwang, TH Kim, S Kim, H Hwang, J Park, H Kim Neural Networks, 106355, 2024 | | 2024 |
Overshoot‐Suppressed Memristor Crossbar Array with High Yield by AlOx Oxidation for Neuromorphic System S Kim, K Park, K Hong, TH Kim, J Park, S Youn, H Kim, WY Choi Advanced Materials Technologies, 2400063, 2024 | | 2024 |
Programmable Threshold Logic Implementations in a Memristor Crossbar Array S Youn, J Lee, S Kim, J Park, K Kim, H Kim Nano Letters 24 (12), 3581-3589, 2024 | | 2024 |