Ramon Collazo
Ramon Collazo
Associate Professor of Materials Science and Engineering, NCSU
Verified email at ncsu.edu
Cited by
Cited by
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
Progress on n‐type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications
R Collazo, S Mita, J Xie, A Rice, J Tweedie, R Dalmau, Z Sitar
physica status solidi c 8 (7‐8), 2031-2033, 2011
Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates
R Dalmau, B Moody, R Schlesser, S Mita, J Xie, M Feneberg, B Neuschl, ...
Journal of The Electrochemical Society 158 (5), H530, 2011
Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition
A Rice, R Collazo, J Tweedie, R Dalmau, S Mita, J Xie, Z Sitar
Journal of Applied Physics 108 (4), 043510, 2010
Seeded growth of AlN bulk crystals in m-and c-orientation
P Lu, R Collazo, RF Dalmau, G Durkaya, N Dietz, B Raghothamachar, ...
Journal of Crystal Growth 312 (1), 58-63, 2009
On the origin of the 265 nm absorption band in AlN bulk crystals
R Collazo, J Xie, BE Gaddy, Z Bryan, R Kirste, M Hoffmann, R Dalmau, ...
Applied Physics Letters 100 (19), 191914, 2012
Photoelectrochemical water splitting: materials, processes and architectures
B Parkinson, J Turner, L Peter, N Lewis, K Sivula, K Domen, AJ Bard, ...
Royal Society of Chemistry, 2013
Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures
J Xie, S Mita, Z Bryan, W Guo, L Hussey, B Moody, R Schlesser, R Kirste, ...
Applied Physics Letters 102 (17), 171102, 2013
High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates
Z Bryan, I Bryan, J Xie, S Mita, Z Sitar, R Collazo
Applied Physics Letters 106 (14), 142107, 2015
Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition
S Mita, R Collazo, A Rice, RF Dalmau, Z Sitar
Journal of Applied Physics 104 (1), 013521, 2008
Growth of Ga-and N-polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers
R Collazo, S Mita, A Aleksov, R Schlesser, Z Sitar
Journal of crystal growth 287 (2), 586-590, 2006
Seeded growth of AlN on N-and Al-polar< 0001> AlN seeds by physical vapor transport
ZG Herro, D Zhuang, R Schlesser, R Collazo, Z Sitar
Journal of crystal growth 286 (2), 205-208, 2006
Surface kinetics in AlN growth: a universal model for the control of surface morphology in III-nitrides
I Bryan, Z Bryan, S Mita, A Rice, J Tweedie, R Collazo, Z Sitar
Journal of Crystal Growth 438, 81-89, 2016
Vacancy compensation and related donor-acceptor pair recombination in bulk AlN
BE Gaddy, Z Bryan, I Bryan, R Kirste, J Xie, R Dalmau, B Moody, ...
Applied Physics Letters 103 (16), 161901, 2013
MgO epitaxy on GaN (0002) surfaces by molecular beam epitaxy
HS Craft, JF Ihlefeld, MD Losego, R Collazo, Z Sitar, JP Maria
Applied physics letters 88 (21), 212906, 2006
Optical signature of Mg-doped GaN: Transfer processes
G Callsen, MR Wagner, T Kure, JS Reparaz, M Bügler, J Brunnmeier, ...
Physical Review B 86 (7), 075207, 2012
The role of surface kinetics on composition and quality of AlGaN
I Bryan, Z Bryan, S Mita, A Rice, L Hussey, C Shelton, J Tweedie, ...
Journal of Crystal Growth 451, 65-71, 2016
X-ray photoelectron spectroscopy characterization of aluminum nitride surface oxides: thermal and hydrothermal evolution
R Dalmau, R Collazo, S Mita, Z Sitar
Journal of Electronic Materials 36 (4), 414-419, 2007
Weakly charged cationic nanoparticles induce DNA bending and strand separation
JG Railsback, A Singh, RC Pearce, TE McKnight, R Collazo, Z Sitar, ...
Advanced materials 24 (31), 4261-4265, 2012
The effect of polarity and surface states on the Fermi level at III-nitride surfaces
P Reddy, I Bryan, Z Bryan, W Guo, L Hussey, R Collazo, Z Sitar
Journal of Applied Physics 116 (12), 123701, 2014
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