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Thorsten Wahlbrink
Thorsten Wahlbrink
Physiker, AMO GmbH
Correu electrònic verificat a amo.de
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Ultrahigh-quality-factor silicon-on-insulator microring resonator
J Niehusmann, A Vörckel, PH Bolivar, T Wahlbrink, W Henschel, H Kurz
Optics letters 29 (24), 2861-2863, 2004
3682004
Pockels effect based fully integrated, strained silicon electro-optic modulator
B Chmielak, M Waldow, C Matheisen, C Ripperda, J Bolten, T Wahlbrink, ...
Optics express 19 (18), 17212-17219, 2011
2622011
Silicon-organic hybrid electro-optical devices
J Leuthold, C Koos, W Freude, L Alloatti, R Palmer, D Korn, J Pfeifle, ...
IEEE Journal of Selected Topics in Quantum Electronics 19 (6), 114-126, 2013
1902013
Silicon-organic hybrid (SOH) and plasmonic-organic hybrid (POH) integration
C Koos, J Leuthold, W Freude, M Kohl, L Dalton, W Bogaerts, ...
Journal of Lightwave Technology 34 (2), 256-268, 2015
1642015
Ultrafast Kerr-induced all-optical wavelength conversion in silicon waveguides using 1.55 μm femtosecond pulses
R Dekker, A Driessen, T Wahlbrink, C Moormann, J Niehusmann, M Först
Optics express 14 (18), 8336-8346, 2006
1612006
Mobility in graphene double gate field effect transistors
MC Lemme, TJ Echtermeyer, M Baus, BN Szafranek, J Bolten, M Schmidt, ...
Solid-State Electronics 52 (4), 514-518, 2008
1402008
25ps all-optical switching in oxygen implanted silicon-on-insulator microring resonator
M Waldow, T Plötzing, M Gottheil, M Först, J Bolten, T Wahlbrink, H Kurz
Optics Express 16 (11), 7693-7702, 2008
1392008
Improved mold fabrication for the definition of high quality nanopatterns by Soft UV-Nanoimprint lithography using diluted PDMS material
N Koo, M Bender, U Plachetka, A Fuchs, T Wahlbrink, J Bolten, H Kurz
Microelectronic Engineering 84 (5-8), 904-908, 2007
1312007
Low-loss silicon strip-to-slot mode converters
R Palmer, L Alloatti, D Korn, W Heni, PC Schindler, J Bolten, M Karl, ...
IEEE Photonics Journal 5 (1), 2200409-2200409, 2013
1092013
Monolithically integrated perovskite semiconductor lasers on silicon photonic chips by scalable top-down fabrication
PJ Cegielski, AL Giesecke, S Neutzner, C Porschatis, M Gandini, D Schall, ...
Nano letters 18 (11), 6915-6923, 2018
1042018
Low power Mach–Zehnder modulator in silicon-organic hybrid technology
R Palmer, L Alloatti, D Korn, PC Schindler, M Baier, J Bolten, T Wahlbrink, ...
IEEE Photonics Technology Letters 25 (13), 1226-1229, 2013
1002013
High-speed all-optical switching in ion-implanted silicon-on-insulator microring resonators
M Först, J Niehusmann, T Plötzing, J Bolten, T Wahlbrink, C Moormann, ...
Optics letters 32 (14), 2046-2048, 2007
1002007
Silicon etch process options for micro-and nanotechnology using inductively coupled plasmas
CC Welch, AL Goodyear, T Wahlbrink, MC Lemme, T Mollenhauer
Microelectronic Engineering 83 (4-9), 1170-1173, 2006
792006
Low-power silicon-organic hybrid (SOH) modulators for advanced modulation formats
M Lauermann, R Palmer, S Koeber, PC Schindler, D Korn, T Wahlbrink, ...
Optics express 22 (24), 29927-29936, 2014
762014
40 GBd 16QAM signaling at 160 Gb/s in a silicon-organic hybrid modulator
M Lauermann, S Wolf, PC Schindler, R Palmer, S Koeber, D Korn, ...
Journal of Lightwave Technology 33 (6), 1210-1216, 2015
702015
Investigation of local strain distribution and linear electro-optic effect in strained silicon waveguides
B Chmielak, C Matheisen, C Ripperda, J Bolten, T Wahlbrink, M Waldow, ...
Optics express 21 (21), 25324-25332, 2013
682013
Subthreshold behavior of triple-gate MOSFETs on SOI Material
MC Lemme, T Mollenhauer, W Henschel, T Wahlbrink, M Baus, O Winkler, ...
Solid-State Electronics 48 (4), 529-534, 2004
672004
CMOS integration of epitaxial Gd2O3 high-k gate dielectrics
HDB Gottlob, T Echtermeyer, T Mollenhauer, JK Efavi, M Schmidt, ...
Solid-State Electronics 50 (6), 979-985, 2006
632006
Integrated perovskite lasers on a silicon nitride waveguide platform by cost-effective high throughput fabrication
PJ Cegielski, S Neutzner, C Porschatis, H Lerch, J Bolten, S Suckow, ...
Optics express 25 (12), 13199-13206, 2017
582017
0.86-nm CET Gate Stacks With EpitaxialHigh-Dielectrics and FUSI NiSi Metal Electrodes
HDB Gottlob, T Echtermeyer, M Schmidt, T Mollenhauer, JK Efavi, ...
IEEE electron device letters 27 (10), 814-816, 2006
582006
En aquests moments el sistema no pot dur a terme l'operació. Torneu-ho a provar més tard.
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