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Yoann Lechaux
Yoann Lechaux
IETR - Université de Rennes - nanoRennes platform
Verified email at univ-rennes1.fr
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Cited by
Cited by
Year
Solvation Effects on Self-Association and Segregation Processes in tert-Butanol–Aprotic Solvent Binary Mixtures
AR Abdel Hamid, R Lefort, Y Lechaux, A Moréac, A Ghoufi, ...
The Journal of Physical Chemistry B 117 (35), 10221-10230, 2013
302013
Photoinduced Persistent Electron Accumulation and Depletion in LaAlO3/SrTiO3 Quantum Wells
Y Chen, Y Lechaux, B Casals, B Guillet, A Minj, J Gázquez, L Méchin, ...
Physical Review Letters 124 (24), 246804, 2020
152020
Study of the oxidation at the Al2O3/GaSb interface after NH4OH and HCl/(NH4) 2S passivations and O2 plasma post atomic layer deposition process
Y Lechaux, AB Fadjie-Djomkam, M Pastorek, X Wallart, S Bollaert, ...
Journal of Applied Physics 124 (17), 2018
102018
Impact of oxygen plasma postoxidation process on Al2O3/n-In0. 53Ga0. 47As metal-oxide-semiconductor capacitors
Y Lechaux, AB Fadjie-Djomkam, S Bollaert, N Wichmann
Applied Physics Letters 109 (13), 2016
102016
Bottom-up fabrication of InAs-on-nothing MOSFET using selective area molecular beam epitaxy
M Pastorek, A Olivier, Y Lechaux, N Wichmann, T Karatsori, M Fahed, ...
Nanotechnology 30 (3), 035301, 2018
52018
Impedance measurements in La0.7Sr0.3MnO3 thin films for uncooled THz bolometers
T Quinten, Y Lechaux, V Pierron, JF Lampin, C Gunther, L Méchin, ...
2022 47th International Conference on Infrared, Millimeter and Terahertz …, 2022
32022
Characterization of defect states in Mg-doped GaN-on-Si p+ n diodes using deep-level transient Fourier spectroscopy
Y Lechaux, A Minj, L Méchin, H Liang, K Geens, M Zhao, E Simoen, ...
Semiconductor Science and Technology 36 (2), 024002, 2020
32020
Comprehensive characterization of Gunn oscillations in In0.53Ga0.47As planar diodes
Y Lechaux, I Íñiguez-de-la-Torre, JA Novoa-Lopéz, Ó García-Pérez, ...
Semiconductor Science and Technology 35 (11), 115009, 2020
32020
Temperature behavior of Gunn oscillations in planar InGaAs diodes
JA Novoa-López, G Paz-Martinez, H Sánchez-Martín, Y Lechaux, ...
IEEE Electron Device Letters 42 (8), 1136-1139, 2021
22021
Monte Carlo analysis of III–V PIN diodes for tunnel-FETs and Impact Ionization-MOSFETs
BG Vasallo, V Talbo, T González, Y Lechaux, N Wichmann, S Bollaert, ...
2017 Spanish Conference on Electron Devices (CDE), 1-4, 2017
22017
Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs
V Talbo, J Mateos, T González, Y Lechaux, N Wichmann, S Bollaert, ...
Journal of Physics: Conference Series 647 (1), 012056, 2015
22015
Electrical characterization and extraction of activation energies of the defect states in the LaAlO3/SrTiO3 heterostructure
Y Lechaux, Y Chen, A Minj, F Sánchez, G Herranz, L Méchin, B Guillet
Applied Physics Letters 121 (8), 2022
12022
Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis
BG Vasallo, T González, V Talbo, Y Lechaux, N Wichmann, S Bollaert, ...
Journal of Applied Physics 123 (3), 2018
12018
Improvement of interfacial and electrical properties of Al2O3/n-Ga0. 47In0. 53As for III-V impact ionization MOSFETs
Y Lechaux, A Fadjie, S Bollaert, V Talbo, J Mateos, T González, ...
Journal of Physics: Conference Series 647 (1), 012062, 2015
12015
2D Channel Defect States Properties Extraction Using DLTFS in AlGaN/GaN HEMTs
Y Lechaux, L Méchin, B Guillet
2023 International Conference on Noise and Fluctuations (ICNF), 1-4, 2023
2023
Progress in process development of La0.7Sr0.3MnO3 thin films for uncooled THz bolometers
T Quinten, Y Lechaux, V Pierron, C Gunther, L Méchin, JF Lampin, ...
2023 48th International Conference on Infrared, Millimeter, and Terahertz …, 2023
2023
Preliminary results on uncooled LSMO THz bolometers
T Quinten, Y Lechaux, V Pierron, C Gunther, L Méchin, JF Lampin, ...
Journées nationales GDR NanoTeraMIR (Nanodispositifs pour THz et le MIR), 2023
2023
Electrical characterization and extraction of activation energies of the defect states in the LaAlO
Y Lechaux, Y Chen, A Minj
2022
Capacitance and Current Deep-Level Transient Fourier Spectroscopy (DLTFS) for the Characterization of Defect States in Mg-Doped GaN-on-Si p+n Diodes
Y Lechaux, A Minj, L Méchin, H Liang, K Geens, M Zhao, E Simoen, ...
Electrochemical Society Meeting Abstracts 239, 2043-2043, 2021
2021
Persistent Photocarrier Accumulation and Depletion in LaAlO3/SrTiO3 Quantum Wells
Y Chen, Y Lechaux, B Casals, B Guillet, A Minj, F Sánchez Barrera, ...
2020
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