David Maldonado Correa
David Maldonado Correa
Department of Electronics and Computer Technology. University of Granada (Spain)
Verified email at ugr.es
Title
Cited by
Cited by
Year
Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al: HfO2/TiN RRAMs
E Pérez, D Maldonado, C Acal, JE Ruiz-Castro, FJ Alonso, AM Aguilera, ...
Microelectronic Engineering 214, 104-109, 2019
132019
Time series statistical analysis: A powerful tool to evaluate the variability of resistive switching memories
JB Roldán, FJ Alonso, AM Aguilera, D Maldonado, M Lanza
Journal of Applied Physics 125 (17), 174504, 2019
122019
Resistive Switching and Charge Transport in Laser-Fabricated Graphene Oxide Memristors: A Time Series and Quantum Point Contact Modeling Approach
N Rodriguez, D Maldonado, FJ Romero, FJ Alonso, AM Aguilera, ...
Materials 12 (22), 3734, 2019
52019
Experimental evaluation of the dynamic route map in the reset transition of memristive ReRAMs
D Maldonado, MB Gonzalez, F Campabadal, F Jimenez-Molinos, ...
Chaos, Solitons & Fractals 139, 110288, 2020
22020
Memristor variability and stochastic physical properties modeling from a multivariate time series approach
FJ Alonso, D Maldonado, AM Aguilera, JB Roldán
Chaos, Solitons & Fractals 143, 110461, 2021
12021
Modeling of the temperature effects in filamentary-type resistive switching memories using quantum point-contact theory
M Calixto, D Maldonado, E Miranda, JB Roldán
Journal of Physics D: Applied Physics 53 (29), 295106, 2020
12020
Reversible dielectric breakdown in h-BN stacks: a statistical study of the switching voltages
JB Roldán, D Maldonado, F Jiménez-Molinos, C Acal, JE Ruiz-Castro, ...
2020 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2020
12020
Influence of magnetic field on the operation of TiN/Ti/HfO2/W resistive memories
D Maldonado, AM Roldán, MB González, F Jiménez-Molinos, ...
Microelectronic Engineering 215, 110983, 2019
12019
Stochastic resonance in a metal-oxide memristive device
AN Mikhaylov, DV Guseinov, AI Belov, DS Korolev, VA Shishmakova, ...
Chaos, Solitons & Fractals 144, 110723, 2021
2021
Advanced temperature dependent statistical analysis of forming voltage distributions for three different HfO2-based RRAM technologies
E Pérez, D Maldonado, C Acal, JE Ruiz-Castro, AM Aguilera, ...
Solid-State Electronics 176, 107961, 2021
2021
Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks
D Maldonado, JB Roldán, AM Roldán, F Jiménez-Molinos, F Hui, Y Shi, ...
2020 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2020
2020
Resistive Switching and Charge Transport in Laser-Fabricated Graphene Oxide Memristors: A Time Series and Quantum Point Contact Modeling Approach
N Rodríguez Santiago, D Maldonado, FJ Romero Maldonado, ...
MDPI, 2019
2019
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Articles 1–12