Francisco de Anda
Francisco de Anda
Profesor en UASLP
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TítuloCitado porAño
H 2 O 2: HF: C 4 O 6 H 6 (Tartaric Acid): H 2 O Etching System for Chemical Polishing of GaSb
IE Berishev, F De Anda, VA Mishournyi, J Olvera, ND Ilyinskaya, ...
Journal of the Electrochemical Society 142 (10), L189, 1995
InGaAsSb growth from Sb-rich solutions
VA Mishurnyi, F De Anda, AY Gorbatchev, VI Vasil'ev, NN Faleev
Journal of crystal growth 180 (1), 34-39, 1997
High purity GaSb grown by LPE in a sapphire boat
J Olvera-Hernandez, F De Anda, H Navarro-Contreras, VA Mishurnyi
Journal of crystal growth 208 (1-4), 27-32, 2000
Photoluminescence of epitaxial GaAs grown by close space vapor transport method
JM Arroyo, L Kratena, F Chavez, F De Anda
Solid state communications 49 (10), 939-942, 1984
Diffusion du zinc dans GaAlSb et application à la photodétection infrarouge
A Joullie, F De Anda, P Salsac, M Mebarki
Revue de physique appliquée 19 (3), 223-230, 1984
Some perspectives and peculiarities of the LPE growth of multicomponent Sb-based solid solutions from pentanary liquid phases
VA Mishurnyi, F De Anda, AY Gorbatchev, VI Vasil’ev
Journal of electronic materials 28 (8), 959-962, 1999
Growth of low-etch-pit density InSb single crystals by the Czochralski method
JA Godines, R Castillo, J Martinez, ME Navarro, F De Anda, A Canales, ...
Journal of crystal growth 178 (3), 422-425, 1997
Investigation of the “composition-pulling or lattice-latching” effect in LPE
MP Rodríguez-Torres, AY Gorbatchev, VA Mishurnyi, F De Anda, ...
Journal of crystal growth 277 (1-4), 138-142, 2005
Growth of quantum-well heterostructures by liquid phase epitaxy
VA Mishurnyi, F de Anda, VA Elyukhin, IC Hernandez
Critical reviews in solid state and materials sciences 31 (1-2), 1-13, 2006
Carrier concentration control of GaSb/GaInAsSb system
JL Lazzari, F De Anda, J Nieto, H Aït‐Kaci, M Mebarki, F Chevrier, ...
AIP Conference Proceedings 890 (1), 115-126, 2007
Influence of substrate conductivity on layer thickness in LPE GaAs
J Olvera-Hernández, P De Jesús, F De Anda, M Rojas-Lopez
Journal of crystal growth 268 (3-4), 375-377, 2004
AlGaAsSb and AlGaInAsSb Growth from Sb‐rich Solutions
VA Mishurnyi, F De Anda, AY Gorbatchev, VI Vasil'ev, VM Smirnov, ...
Crystal Research and Technology: Journal of Experimental and Industrial …, 1998
J. the Electrochem
IE Berishev, F de Anda, VA Mishournyi, J Olvera, ND Ilyinskaya, ...
Soc 142, L189, 1995
A survey of new laser and detector structures for 3-5 µm midinfrared spectral range
AF Joullie, P Christol, JB Rodriguez, H Ait-Kaci, F Chevrier, J Nieto, ...
Advanced Optoelectronics and lasers 5582, 211-221, 2004
Temperature determination by solubility measurements and a study of evaporation of volatile components in LPE
VA Mishurnyi, F De Anda, ICH del Castillo, AY Gorbatchev
Thin solid films 340 (1-2), 24-27, 1999
DX-center transformation of Te donors in GaSb under hydrostatic pressure
H Navarro-Contreras, F de Anda-Salazar, L Hsu, EE Haller
Physical Review B 57 (19), 12169, 1998
Sn doped GaSb grown by liquid phase epitaxy
VH Compeán-Jasso, F De Anda, VA Mishurnyi, AY Gorbatchev, T Prutskij, ...
Thin solid films 548, 168-170, 2013
Study of the oxygen incorporation in Al0. 2Ga0. 3In0. 5P: Be layers grown by MBE employing a P-cracker cell
C Soubervielle-Montalvo, V Mishournyi, F de Anda, A Gorbatchev, ...
Journal of crystal growth 311 (7), 1650-1654, 2009
Influence of the GaAs substrate orientation on the composition of GaxIn1− xP (x≈ 0.5) grown by LPE and MOCVD
VA Mishurnyi, F De Anda, AY Gorbatchev, Y Kudriavtsev, VA Elyukhin, ...
Thin solid films 516 (22), 8092-8095, 2008
Self-assembling of 4C10Sn clusters in Ge co-doped with C and Sn
VA Elyukhin, LP Sorokina, VA Mishurnyi, F de Anda
Physica E: Low-dimensional Systems and Nanostructures 40 (4), 883-885, 2008
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Artículos 1–20