Jose M. Llorens
Jose M. Llorens
Research Fellow. Instituto de Micro y Nanotecnología. CSIC
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Optomechanics with silicon nanowires by harnessing confined electromagnetic modes
D Ramos, E Gil-Santos, V Pini, JM Llorens, M Fernández-Regúlez, ...
Nano letters 12 (2), 932-937, 2012
Electronic structure of a quantum ring in a lateral electric field
JM Llorens, C Trallero-Giner, A Garcia-Cristobal, A Cantarero
Physical Review B 64 (3), 035309, 2001
Near thresholdless laser operation at room temperature
I Prieto, JM Llorens, LE Munoz-Camúnez, AG Taboada, J Canet-Ferrer, ...
Optica 2 (1), 66-69, 2015
Silicon nanowires: where mechanics and optics meet at the nanoscale
D Ramos, E Gil-Santos, O Malvar, JM Llorens, V Pini, A San Paulo, ...
Scientific reports 3, 3445, 2013
Deformation profile in GaN quantum dots: Medium-energy ion scattering experiments and theoretical calculations
D Jalabert, J Coraux, H Renevier, B Daudin, MH Cho, KB Chung, ...
Physical Review B 72 (11), 115301, 2005
Analysis of the modified optical properties and band structure of GaAs1− xSbx-capped InAs/GaAs quantum dots
JM Ulloa, JM Llorens, M Del Moral, M Bozkurt, PM Koenraad, A Hierro
Journal of Applied Physics 112 (7), 074311, 2012
High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing
JM Ulloa, JM Llorens, B Alén, DF Reyes, DL Sales, D González, A Hierro
Applied Physics Letters 101 (25), 253112, 2012
Resonant Raman scattering in self-assembled Ga N∕ Al N quantum dots
N Garro, A Cros, JM Llorens, A García-Cristóbal, A Cantarero, N Gogneau, ...
Physical Review B 74 (7), 075305, 2006
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
AD Utrilla, DF Reyes, JM Llorens, I Artacho, T Ben, D González, Ž Gačević, ...
Solar Energy Materials and Solar Cells 159, 282-289, 2017
Raman study and theoretical calculations of strain in GaN quantum dot multilayers
A Cros, N Garro, JM Llorens, A García-Cristóbal, A Cantarero, N Gogneau, ...
Physical Review B 73 (11), 115313, 2006
Energy levels of a quantum ring in a lateral electric field
JM Llorens, C Trallero-Giner, A Garcıa-Cristóbal, A Cantarero
Microelectronics journal 33 (4), 355-359, 2002
Strain-balanced type-II superlattices for efficient multi-junction solar cells
A Gonzalo, AD Utrilla, DF Reyes, V Braza, JM Llorens, DF Marrón, B Alén, ...
Scientific Reports 7 (1), 4012, 2017
Broadband antireflective nano-cones for tandem solar cells
J Buencuerpo, JM Llorens, ML Dotor, JM Ripalda
Optics Express 23 (7), A322-A336, 2015
Optical back-action in silicon nanowire resonators: bolometric versus radiation pressure effects
E Gil-Santos, D Ramos, V Pini, J Llorens, M Fernández-Regúlez, ...
New Journal of Physics 15 (3), 035001, 2013
Strain balanced epitaxial stacks of quantum dots and quantum posts
D Alonso‐Álvarez, JM Ripalda, B Alén, JM Llorens, A Rivera, F Briones
Advanced Materials 23 (44), 5256-5261, 2011
Light-trapping in photon enhanced thermionic emitters
J Buencuerpo, JM Llorens, P Zilio, W Raja, J Cunha, A Alabastri, ...
Optics Express 23 (19), A1220-A1235, 2015
Absorption features of the zero frequency mode in an ultra-thin slab
JM Llorens, J Buencuerpo, PA Postigo
Applied Physics Letters 105 (23), 231115, 2014
Structural and optical changes induced by incorporation of antimony into InAs/GaAs (001) quantum dots
AG Taboada, AM Sanchez, AM Beltran, M Bozkurt, D Alonso-Álvarez, ...
Physical Review B 82 (23), 235316, 2010
Nano-cones for broadband light coupling to high index substrates
J Buencuerpo, L Torné, R Álvaro, JM Llorens, ML Dotor, JM Ripalda
Scientific Reports 6, 38682, 2016
Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology
JM Llorens, L Wewior, ER Cardozo de Oliveira, JM Ulloa, AD Utrilla, ...
Applied Physics Letters 107 (18), 183101, 2015
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