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Xing Huang
Xing Huang
PN Junction Semiconductor (Hangzhou) Co. Ltd.
Dirección de correo verificada de ncsu.edu
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Short-circuit capability of 1200V SiC MOSFET and JFET for fault protection
X Huang, G Wang, Y Li, AQ Huang, BJ Baliga
2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and …, 2013
1172013
Comparisons of 6.5 kV 25A Si IGBT and 10-kV SiC MOSFET in solid-state transformer application
G Wang, X Huang, J Wang, T Zhao, S Bhattacharya, AQ Huang
2010 IEEE Energy Conversion Congress and Exposition, 100-104, 2010
942010
Experimental study of 650V AlGaN/GaN HEMT short-circuit safe operating area (SCSOA)
X Huang, DY Lee, V Bondarenko, A Baker, DC Sheridan, AQ Huang, ...
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014
522014
Development of medium voltage solid-state fault isolation devices for ultra-fast protection of distribution systems
C Peng, X Song, MA Rezaei, X Huang, C Widener, AQ Huang, M Steurer
IECON 2014-40th Annual Conference of the IEEE Industrial Electronics Society …, 2014
502014
Reliability of 4H-SiC SBD/JBS diodes under repetitive surge current stress
X Huang, G Wang, MC Lee, AQ Huang
2012 IEEE Energy Conversion Congress and Exposition (ECCE), 2245-2248, 2012
282012
Orthogonal positive-bevel termination for chip-size SiC reverse blocking devices
X Huang, E Van Brunt, BJ Baliga, AQ Huang
IEEE electron device letters 33 (11), 1592-1594, 2012
232012
Ruggedness analysis of 600V 4H-SiC JBS diodes under repetitive avalanche conditions
X Huang, G Wang, L Jiang, AQ Huang
2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and …, 2012
232012
Design and fabrication of 3.3 kV SiC MOSFETs for industrial applications
X Huang, L Fursin, A Bhalla, W Simon, JC Dries
2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017
212017
Juice blender
KC Lin
US Patent 6,709,150, 2004
212004
6.5 kV enhancement mode SiC JFET based power module
JL Hostetler, X Li, P Alexandrov, X Huang, A Bhalla, M Becker, J Colombo, ...
2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2015
152015
Impact of termination region on switching loss for SiC MOSFET
X Li, B Tan, AQ Huang, B Zhang, Y Zhang, X Deng, Z Li, X She, F Wang, ...
IEEE Transactions on Electron Devices 66 (2), 1026-1031, 2019
102019
SiC symmetric blocking terminations using orthogonal positive bevel termination and junction termination extension
X Huang, BJ Baliga, AQ Huang, A Suvorov, C Capell, L Cheng, A Agarwal
2013 25th International Symposium on Power Semiconductor Devices & IC's …, 2013
82013
An analytical investigation of the effect of varied buffer layer designs on the turn-off speed for 4H-SiC IGBTs
MC Lee, X Huang, A Huang, E Van Brunt
The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, 44-47, 2013
52013
Development of a high-performance 3,300 V silicon carbide MOSFET
L Fursin, XQ Li, X Huang, K Zhu, W Simon, A Bhalla
Materials Science Forum 924, 770-773, 2018
32018
Applied Power Electronics Conf
X Huang, G Wang, Y Li, AQ Huang, BJ Baliga
Expo, 2013
32013
High current (650V–200A, 1200V–100A) single SiC diodes
JL Hostetler, M O'Grady, W Simon, X Huang, M Fox, A Bhalla
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2016
22016
High current SiC devices
J Hostetler, W Simon, X Huang, A Bhalla
USCi, 2016
22016
An accurate prediction of two-dimensional carrier density profile in IGBT and its significances on steady-state and transient analysis
MC Lee, X Huang, AQ Huang
2012 IEEE Energy Conversion Congress and Exposition (ECCE), 1496-1502, 2012
22012
Power semiconductor device with over-current protection
DC Sheridan, X Huang
US Patent 9,673,312, 2017
2017
Semiconductor devices having a positive-bevel termination or a negative-bevel termination and their manufacture
X Huang, BJ Baliga, AQ Huang
US Patent App. 14/094,189, 2014
2014
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