| Short-circuit capability of 1200V SiC MOSFET and JFET for fault protection X Huang, G Wang, Y Li, AQ Huang, BJ Baliga 2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and …, 2013 | 117 | 2013 |
| Comparisons of 6.5 kV 25A Si IGBT and 10-kV SiC MOSFET in solid-state transformer application G Wang, X Huang, J Wang, T Zhao, S Bhattacharya, AQ Huang 2010 IEEE Energy Conversion Congress and Exposition, 100-104, 2010 | 94 | 2010 |
| Experimental study of 650V AlGaN/GaN HEMT short-circuit safe operating area (SCSOA) X Huang, DY Lee, V Bondarenko, A Baker, DC Sheridan, AQ Huang, ... 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014 | 52 | 2014 |
| Development of medium voltage solid-state fault isolation devices for ultra-fast protection of distribution systems C Peng, X Song, MA Rezaei, X Huang, C Widener, AQ Huang, M Steurer IECON 2014-40th Annual Conference of the IEEE Industrial Electronics Society …, 2014 | 50 | 2014 |
| Reliability of 4H-SiC SBD/JBS diodes under repetitive surge current stress X Huang, G Wang, MC Lee, AQ Huang 2012 IEEE Energy Conversion Congress and Exposition (ECCE), 2245-2248, 2012 | 28 | 2012 |
| Orthogonal positive-bevel termination for chip-size SiC reverse blocking devices X Huang, E Van Brunt, BJ Baliga, AQ Huang IEEE electron device letters 33 (11), 1592-1594, 2012 | 23 | 2012 |
| Ruggedness analysis of 600V 4H-SiC JBS diodes under repetitive avalanche conditions X Huang, G Wang, L Jiang, AQ Huang 2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and …, 2012 | 23 | 2012 |
| Design and fabrication of 3.3 kV SiC MOSFETs for industrial applications X Huang, L Fursin, A Bhalla, W Simon, JC Dries 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 21 | 2017 |
| Juice blender KC Lin US Patent 6,709,150, 2004 | 21 | 2004 |
| 6.5 kV enhancement mode SiC JFET based power module JL Hostetler, X Li, P Alexandrov, X Huang, A Bhalla, M Becker, J Colombo, ... 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2015 | 15 | 2015 |
| Impact of termination region on switching loss for SiC MOSFET X Li, B Tan, AQ Huang, B Zhang, Y Zhang, X Deng, Z Li, X She, F Wang, ... IEEE Transactions on Electron Devices 66 (2), 1026-1031, 2019 | 10 | 2019 |
| SiC symmetric blocking terminations using orthogonal positive bevel termination and junction termination extension X Huang, BJ Baliga, AQ Huang, A Suvorov, C Capell, L Cheng, A Agarwal 2013 25th International Symposium on Power Semiconductor Devices & IC's …, 2013 | 8 | 2013 |
| An analytical investigation of the effect of varied buffer layer designs on the turn-off speed for 4H-SiC IGBTs MC Lee, X Huang, A Huang, E Van Brunt The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, 44-47, 2013 | 5 | 2013 |
| Development of a high-performance 3,300 V silicon carbide MOSFET L Fursin, XQ Li, X Huang, K Zhu, W Simon, A Bhalla Materials Science Forum 924, 770-773, 2018 | 3 | 2018 |
| Applied Power Electronics Conf X Huang, G Wang, Y Li, AQ Huang, BJ Baliga Expo, 2013 | 3 | 2013 |
| High current (650V–200A, 1200V–100A) single SiC diodes JL Hostetler, M O'Grady, W Simon, X Huang, M Fox, A Bhalla 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2016 | 2 | 2016 |
| High current SiC devices J Hostetler, W Simon, X Huang, A Bhalla USCi, 2016 | 2 | 2016 |
| An accurate prediction of two-dimensional carrier density profile in IGBT and its significances on steady-state and transient analysis MC Lee, X Huang, AQ Huang 2012 IEEE Energy Conversion Congress and Exposition (ECCE), 1496-1502, 2012 | 2 | 2012 |
| Power semiconductor device with over-current protection DC Sheridan, X Huang US Patent 9,673,312, 2017 | | 2017 |
| Semiconductor devices having a positive-bevel termination or a negative-bevel termination and their manufacture X Huang, BJ Baliga, AQ Huang US Patent App. 14/094,189, 2014 | | 2014 |
Meng-Chia LeeNorth Carolina State UniversityDirección de correo verificada de ncsu.edu
