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Sameer Singhal
Sameer Singhal
Verified email at cfdrc.com
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Year
12 W/mm AlGaN-GaN HFETs on silicon substrates
JW Johnson, EL Piner, A Vescan, R Therrien, P Rajagopal, JC Roberts, ...
IEEE Electron Device Letters 25 (7), 459-461, 2004
3082004
AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon (111) substrates
JD Brown, R Borges, E Piner, A Vescan, S Singhal, R Therrien
Solid-State Electronics 46 (10), 1535-1539, 2002
1612002
Reliability of large periphery GaN-on-Si HFETs
S Singhal, T Li, A Chaudhari, AW Hanson, R Therrien, JW Johnson, ...
Microelectronics Reliability 46 (8), 1247-1253, 2006
1242006
GaN-on-Si failure mechanisms and reliability improvements
S Singhal, JC Roberts, P Rajagopal, T Li, AW Hanson, R Therrien, ...
2006 IEEE International Reliability Physics Symposium Proceedings, 95-98, 2006
912006
Linearity characteristics of microwave-power GaN HEMTs
W Nagy, J Brown, R Borges, S Singhal
IEEE transactions on microwave theory and techniques 51 (2), 660-664, 2003
862003
Wearable sensor system powered by a biofuel cell for detection of lactate levels in sweat
SO Garcia, YV Ulyanova, R Figueroa-Teran, KH Bhatt, S Singhal, ...
ECS Journal of Solid State Science and Technology 5 (8), M3075, 2016
842016
Improved interfacial electron transfer in modified bilirubin oxidase biocathodes
RJ Lopez, S Babanova, Y Ulyanova, S Singhal, P Atanassov
ChemElectroChem 1 (1), 241-248, 2014
812014
Material, process, and device development of GaN-based HFETs on silicon substrates
JW Johnson, J Gao, JD BROWN, A HANSON, S SINGHAL, R BORGES
Proceedings-Electrochemical Society, 405-419, 2004
732004
A 36mm GaN-on-Si HFET producing 368W at 60V with 70% drain efficiency
R Therrien, S Singhal, JW Johnson, W Nagy, R Borges, A Chaudhari, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
682005
150 W GaN-on-Si RF power transistor
W Nagy, S Singhal, R Borges, JW Johnson, JD Brown, R Therrien, ...
IEEE MTT-S International Microwave Symposium Digest, 2005., 483-486, 2005
632005
Gallium nitride material transistors and methods associated with the same
WH Nagy, RM Borges, JD Brown, AD Chaudhari, JW Cook Jr, ...
US Patent 7,135,720, 2006
592006
Gallium nitride material structures including isolation regions and methods
J Johnson, R Borges, J Brown, J Cook, A Hanson, E Piner, P Rajagopal, ...
US Patent App. 10/879,695, 2005
542005
Effect of enzymatic orientation through the use of syringaldazine molecules on multiple multi-copper oxidase enzymes
Y Ulyanova, S Babanova, E Pinchon, I Matanovic, S Singhal, P Atanassov
Physical Chemistry Chemical Physics 16 (26), 13367-13375, 2014
492014
AlGaN/GaN HFETs on 100 mm silicon substrates for commercial wireless applications
A Vescan, JD Brown, JW Johnson, R Therrien, T Gehrke, P Rajagopal, ...
physica status solidi (c), 52-56, 2003
412003
Design of experiments and principal component analysis as approaches for enhancing performance of gas-diffusional air-breathing bilirubin oxidase cathode
S Babanova, K Artyushkova, Y Ulyanova, S Singhal, P Atanassov
Journal of Power Sources 245, 389-397, 2014
402014
Qualification and reliability of a GaN process platform
S Singhal, AW Hanson, A Chaudhari, P Rajagopal, T Li, JW Johnson, ...
Int. Conf. Compound Semiconductor MANTECH Tech. Dig, 83-86, 2007
362007
Performance of AlGaN/GaN HFETs fabricated on 100 mm silicon substrates for wireless basestation applications
JD Brown, W Nagy, S Singhal, S Peters, A Chaudhari, T Li, R Nichols, ...
2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No …, 2004
302004
Direct on-wafer non-invasive thermal monitoring of AlGaN/GaN power HFETs under microwave large signal conditions
S Nuttinck, R Mukhopadhyay, C Loper, S Singhal, M Harris, J Laskar
272005
Development of a GaN transistor process for linear power applications
AW Hanson, R Borges, JD Brown, JW Cook Jr, T Gehrke, JW Johnson, ...
2004 International Conference on Compound Semiconductor Manufacturing …, 2004
272004
Gallium nitride material devices and associated methods
JW Johnson, S Singhal, AW Hanson, RJ Therrien
US Patent 9,608,102, 2017
242017
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