| Mobility and saturation velocity in graphene on SiO2 VE Dorgan, MH Bae, E Pop Applied Physics Letters 97 (8), 2010 | 623 | 2010 |
| Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition CD English, G Shine, VE Dorgan, KC Saraswat, E Pop Nano letters 16 (6), 3824-3830, 2016 | 537 | 2016 |
| Bright visible light emission from graphene YD Kim, H Kim, Y Cho, JH Ryoo, CH Park, P Kim, YS Kim, S Lee, Y Li, ... Nature nanotechnology 10 (8), 676-681, 2015 | 368 | 2015 |
| Stacked Graphene-Al2O3 Nanopore Sensors for Sensitive Detection of DNA and DNA–Protein Complexes BM Venkatesan, D Estrada, S Banerjee, X Jin, VE Dorgan, MH Bae, ... ACS nano 6 (1), 441-450, 2012 | 266 | 2012 |
| High-Field Electrical and Thermal Transport in Suspended Graphene VE Dorgan, A Behnam, H Conley, KI Bolotin, E Pop Nano Letters 13 (10), 4581-4586, 2013 | 215 | 2013 |
| Scaling of high-field transport and localized heating in graphene transistors MH Bae, S Islam, VE Dorgan, E Pop ACS nano 5 (10), 7936-7944, 2011 | 126 | 2011 |
| Role of Joule heating on current saturation and transient behavior of graphene transistors S Islam, Z Li, VE Dorgan, MH Bae, E Pop IEEE electron device letters 34 (2), 166-168, 2013 | 109 | 2013 |
| Direct observation of resistive heating at graphene wrinkles and grain boundaries KL Grosse, VE Dorgan, D Estrada, JD Wood, I Vlassiouk, G Eres, ... Applied Physics Letters 105 (14), 2014 | 64 | 2014 |
| Role of Remote Interfacial Phonon (RIP) Scattering in Heat Transport Across Graphene/SiO2 Interfaces YK Koh, AS Lyons, MH Bae, B Huang, VE Dorgan, DG Cahill, E Pop Nano letters 16 (10), 6014-6020, 2016 | 38 | 2016 |
| Improving contact resistance in MoS2field effect transistors CD English, G Shine, VE Dorgan, KC Saraswat, E Pop 72nd Device Research Conference, 193-194, 2014 | 21 | 2014 |
| ACS Nano 5, 7936 (2011) MH Bae, S Islam, VE Dorgan, E Pop | 10 | |
| Reliability, failure, and fundamental limits of graphene and carbon nanotube interconnects AD Liao, A Behnam, VE Dorgan, Z Li, E Pop 2013 IEEE International Electron Devices Meeting, 15.1. 1-15.1. 4, 2013 | 8 | 2013 |
| Antifuse memory arrays with antifuse elements at the back-end-of-line (BEOL) V Dorgan, J Hicks, M Reshotko, A Sharma, I Tsameret US Patent 11,264,317, 2022 | 6 | 2022 |
| A 0.9-μm² 1T1R Bit Cell in 14-nm High-Density Metal Fuse Technology for High-Volume Manufacturing and In-Field Programming Z Chen, SH Kulkarni, VE Dorgan, SM Rajarshi, L Jiang, U Bhattacharya IEEE Journal of Solid-State Circuits 52 (4), 933-939, 2017 | 6 | 2017 |
| Multi-valley high-field transport in 2-dimensional MoS2transistors AY Serov, VE Dorgan, CD English, E Pop 72nd Device Research Conference, 183-184, 2014 | 6 | 2014 |
| Mobility and Saturation Velocity in Graphene on Silicon Dioxide VE Dorgan University of Illinois at Urbana-Champaign, 2010 | 5 | 2010 |
| FinFET transistors as antifuse elements V Dorgan, J Hicks, I Meric US Patent 11,515,251, 2022 | 3 | 2022 |
| High-Field and Thermal Transport in Graphene Z Li, VE Dorgan, AY Serov, E Pop 2D Materials for Nanoelectronics, 107-138, 2016 | 3 | 2016 |
| High-field and thermal transport in 2D atomic layer devices A Serov, VE Dorgan, A Behnam, CD English, Z Li, S Islam, E Pop Micro-and Nanotechnology Sensors, Systems, and Applications VI 9083, 27-35, 2014 | 3 | 2014 |
| Mobility and velocity-field relationship in graphene V Dorgan, MH Bae, E Pop 68th Device Research Conference, 73-74, 2010 | 3 | 2010 |
