Mechanism of contact resistance formation in ohmic contacts with high dislocation density AV Sachenko, AE Belyaev, NS Boltovets, RV Konakova, YY Kudryk, ... Journal of applied physics 111 (8), 2012 | 50 | 2012 |
Mechanism of dislocation-governed charge transport in Schottky diodes based on gallium nitride AE Belyaev, NS Boltovets, VN Ivanov, VP Klad’ko, RV Konakova, ... Semiconductors 42, 689-693, 2008 | 31 | 2008 |
Temperature dependence of contact resistance of Au-Ti-Pd2Si-n+-Si ohmic contacts AE Belyaev, NS Boltovets, RV Konakova, YY Kudryk, AV Sachenko, ... arXiv preprint arXiv:1104.1030, 2011 | 23 | 2011 |
The role of ITO resistivity on current spreading and leakage in InGaN/GaN light emitting diodes V Sheremet, M Genç, M Elçi, N Sheremet, A Aydınlı, I Altuntaş, K Ding, ... Superlattices and Microstructures 111, 1177-1194, 2017 | 19 | 2017 |
Temperature dependence of the contact resistance of ohmic contacts to III–V compounds with a high dislocation density AV Sachenko, AE Belyaev, AV Bobyl, NS Boltovets, VN Ivanov, ... Semiconductors 46, 334-341, 2012 | 17 | 2012 |
High‐Quality CsPbBr3 Perovskite Films with Modal Gain above 10 000 cm−1 at Room Temperature DA Tatarinov, SS Anoshkin, IA Tsibizov, V Sheremet, F Isik, ... Advanced Optical Materials 11 (7), 2202407, 2023 | 15 | 2023 |
Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs AA M. Genç, V. Sheremet, M. Elçi, A.E. Kasapoğlu, İ. Altuntaş, İ. Demir, G ... Superlattices and Microstructures 128, 9-13, 2019 | 14 | 2019 |
Two-step passivation for enhanced InGaN/GaN light emitting diodes with step graded electron injectors V Sheremet, M Genç, N Gheshlaghi, M Elçi, N Sheremet, A Aydınlı, ... Superlattices and Microstructures 113, 623-634, 2018 | 13 | 2018 |
Features of temperature dependence of contact resistivity in ohmic contacts on lapped n-Si AV Sachenko, AE Belyaev, NS Boltovets, AO Vinogradov, VP Kladko, ... Journal of applied physics 112 (6), 2012 | 13 | 2012 |
Metrological aspects of measuring resistance of ohmic contacts VN Sheremet Radioelectronics and communications systems 53, 119-128, 2010 | 13 | 2010 |
InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors V Sheremet, N Gheshlaghi, M Sözen, M Elçi, N Sheremet, A Aydınlı, ... Superlattices and Microstructures 116, 253-261, 2018 | 11 | 2018 |
Temperature dependence of contact resistance for Au-Ti-Pd2Si-n +-Si ohmic contacts subjected to microwave irradiation AE Belyaev, NS Boltovets, RV Konakova, YY Kudryk, AV Sachenko, ... Semiconductors 46, 330-333, 2012 | 11 | 2012 |
On the tunnel mechanism of current flow in Au-TiBx-n-GaN-i-Al2O3 Schottky barrier diodes AE Belyaev, NS Boltovets, VN Ivanov, VP Klad’ko, RV Konakova, ... Semiconductor Physics, Quantum Electronics & Optoelectronics 10 (3), 1-5, 2007 | 9 | 2007 |
Temperature dependences of the contact resistivity in ohmic contacts to n +-InN AV Sachenko, AE Belyaev, NS Boltovets, PN Brunkov, VN Jmerik, ... Semiconductors 49, 461-471, 2015 | 8 | 2015 |
Resistance formation mechanisms for contacts to n ‐GaN and n ‐AlN with high dislocation density AV Sachenko, AE Belyaev, NS Boltovets, YV Zhilyaev, VP Klad'ko, ... physica status solidi c 10 (3), 498-500, 2013 | 8 | 2013 |
Resistance formation mechanisms for contacts to n ‐GaN and n ‐AlN with high dislocation density AV Sachenko, AE Belyaev, NS Boltovets, YV Zhilyaev, VP Klad'ko, ... physica status solidi c 10 (3), 498-500, 2013 | 7 | 2013 |
The mechanism of contact-resistance formation on lapped n-Si surfaces AV Sachenko, AE Belyaev, NS Boltovets, AO Vinogradov, ... Semiconductors 47, 449-454, 2013 | 7 | 2013 |
Development of high-stable contact systems to gallium nitride microwave diodes AE Belyaev, NS Boltovets, VN Ivanov, LM Kapitanchuk, VP Kladko, ... Semiconductor Physics Quantum Electronics & Optoelectronics, 2007 | 6 | 2007 |
The temperature dependence of the resistivity of ohmic contacts based on gallium arsenide and indium phosphide in the 4.2–300 K range AV Sachenko, AE Belyaev, NS Boltovets, RV Konakova, SA Vitusevich, ... Technical Physics Letters 42, 649-651, 2016 | 5 | 2016 |
Effect of microwave irradiation on the resistance of Au-TiB x -Ge-Au-n-n +-n ++-GaAs(InP) ohmic contacts AE Belyaev, AV Sachenko, NS Boltovets, VN Ivanov, RV Konakova, ... Semiconductors 46, 541-544, 2012 | 4 | 2012 |