Structural and physical characteristics of ultrananocrystalline diamond/hydrogenated amorphous carbon composite films deposited using a coaxial arc plasma gun T Yoshitake, Y Nakagawa, A Nagano, R Ohtani, H Setoyama, ... Japanese journal of applied physics 49 (1R), 015503, 2010 | 57 | 2010 |
Near-edge x-ray absorption fine-structure, x-ray photoemission, and Fourier transform infrared spectroscopies of ultrananocrystalline diamond/hydrogenated amorphous carbon … T Yoshitake, A Nagano, S Ohmagari, M Itakura, N Kuwano, R Ohtani, ... Japanese journal of applied physics 48 (2R), 020222, 2009 | 55 | 2009 |
Formation of p-type semiconducting ultrananocrystalline diamond/hydrogenated amorphous carbon composite films by boron doping S Ohmagari, T Yoshitake, A Nagano, R Ohtani, H Setoyama, E Kobayashi, ... Japanese journal of applied physics 49 (3R), 031302, 2010 | 44 | 2010 |
Near-edge X-ray absorption fine structure of ultrananocrystalline diamond/hydrogenated amorphous carbon films prepared by pulsed laser deposition S Ohmagari, T Yoshitake, A Nagano, S Al-Riyami, R Ohtani, H Setoyama, ... Journal of Nanomaterials 2009, 2009 | 42 | 2009 |
Large improvement of phosphorus incorporation efficiency in n-type chemical vapor deposition of diamond R Ohtani, T Yamamoto, SD Janssens, S Yamasaki, S Koizumi Applied Physics Letters 105 (23), 2014 | 34 | 2014 |
X-ray photoemission spectroscopic study of ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by pulsed laser deposition S Ohmagari, T Yoshitake, A Nagano, R Ohtani, H Setoyama, E Kobayashi, ... Diamond and related materials 19 (7-9), 911-913, 2010 | 25 | 2010 |
Electronic structure of GaInN semiconductors investigated by x-ray absorption spectroscopy QX Guo, H Senda, K Saito, T Tanaka, M Nishio, J Ding, TX Fan, D Zhang, ... Applied Physics Letters 98 (18), 2011 | 18 | 2011 |
Chemical bonding structural analysis of nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition H Gima, A Zkria, Y Katamune, R Ohtani, S Koizumi, T Yoshitake Applied Physics Express 10 (1), 015801, 2016 | 17 | 2016 |
Influences of repetition rate of laser pulses on growth of crystalline AlN films on sapphire (0001) substrates by pulsed laser deposition K Sumitani, R Ohtani, T Yoshida, Y Nakagawa, S Mohri, T Yoshitake Diamond and related materials 19 (5-6), 618-620, 2010 | 15 | 2010 |
Toward highly conductive n-type diamond: Incremental phosphorus-donor concentrations assisted by surface migration of admolecules T Yamamoto, SD Janssens, R Ohtani, D Takeuchi, S Koizumi Applied Physics Letters 109 (18), 2016 | 14 | 2016 |
Synchrotron X-ray diffraction study of single-phase β-AlN thin films heteroepitaxially grown on sapphire (0001) substrates by pulsed laser deposition K Sumitani, R Ohtani, T Yoshida, Y Nakagawa, S Mohri, T Yoshitake Japanese journal of applied physics 49 (2R), 020212, 2010 | 9 | 2010 |
SiC/Si-dots multilayer structures formed by supersonic free jets of and Y Ikoma, R Ohtani, N Matsui, T Motooka Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003 | 7 | 2003 |
New X-ray absorption fine structure measurement system under atmospheric pressure in the soft X-ray region at SAGA Light Source T Okajima, R Ohtani Diamond Light Source Proceedings 1 (SRMS-7), e141, 2011 | 6 | 2011 |
Structural change of micropipes in Al-implanted SiC crystals by post-implantation annealing K Ishiji, R Ohtani, S Kawado, Y Hirai, S Nagamachi Semiconductor Science and Technology 26 (2), 025009, 2010 | 6 | 2010 |
Formation of SiC/Si Multilayer Structures on Si(100) by Supersonic Free Jets of Single Gas Source CH3SiH3 Y Ikoma, R Ohtani, T Motooka Materials Science Forum 457, 325-328, 2004 | 5 | 2004 |
Electrical properties of boron-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite films Y Katamune, S Takeichi, R Ohtani, S Koizumi, E Ikenaga, K Kamitani, ... Applied Physics A 125, 1-6, 2019 | 4 | 2019 |
X-ray diffraction study of cubic-phase AlN thin films grown on sapphire (0001) substrates by pulsed laser deposition K Sumitani, R Ohtani, T Yoshida, S Mohri, T Yoshitake IOP Conference Series: Materials Science and Engineering 24 (1), 012017, 2011 | 4 | 2011 |
Formation of Si/SiC heterostructures for silicon-based quantum devices using single CH3SiH3-gas source free jet R Ohtani, Y Ikoma, T Motooka MRS Online Proceedings Library (OPL) 815, J5. 11, 2004 | 4 | 2004 |
Ultrananocrystalline diamond/hydrogenated amorphous carbon films prepared by a coaxial arc plasma gun Y Nakagawa, T Yoshitake, K Hanada, A Nagano, R Ohtani, K Sumitani, ... Materials Science Forum 638, 2927-2932, 2010 | 3 | 2010 |
Influences of repetition rate of arc discharges on hardness and modulus of ultrananocrystalline diamond films prepared by coaxial arc plasma deposition T Yoshida, K Hanada, H Gima, R Ohtani, K Sumitani, H Setoyama, ... Materials Research Express 2 (1), 015021, 2015 | 2 | 2015 |