Tenured Professor, Universidad de Granada, Spain
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A comprehensive study of the corner effects in Pi-gate MOSFETs including quantum effects
FJG Ruiz, A Godoy, F Gamiz, C Sampedro, L Donetti
IEEE Transactions on Electron Devices 54 (12), 3369-3377, 2007
Multi-subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI
C Sampedro, F Gámiz, A Godoy, R Valin, A Garcia-Loureiro, FG Ruiz
Solid-State Electronics 54 (2), 131-136, 2010
Influence of acoustic phonon confinement on electron mobility in ultrathin silicon on insulator layers
L Donetti, F Gámiz, N Rodriguez, F Jimenez, C Sampedro
Applied physics letters 88 (12), 2006
An Analytical Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects
JB Roldán, F Gamiz, F Jiménez-Molinos, C Sampedro, A Godoy, ...
IEEE transactions on electron devices 57 (11), 2925-2933, 2010
-FET as Capacitor-Less eDRAM Cell For High-Density Integration
C Navarro, M Duan, MS Parihar, F Adamu-Lema, S Coseman, J Lacord, ...
IEEE Transactions on Electron Devices 64 (12), 4904-4909, 2017
The multivalley effective conduction band-edge method for Monte Carlo simulation of nanoscale structures
C Sampedro-Matarín, F Gámiz, A Godoy, FJG Ruiz
IEEE Transactions on Electron Devices 53 (11), 2703-2710, 2006
Quantum-mechanical effects in multiple-gate MOSFETs
A Godoy, A Ruiz-Gallardo, C Sampedro, F Gámiz
Journal of Computational Electronics 6, 145-148, 2007
On the extension of ET-FDSOI roadmap for 22 nm node and beyond
C Sampedro, F Gámiz, A Godoy
Solid-state electronics 90, 23-27, 2013
Reaching sub-32nm nodes: ET-FDSOI and BOX optimization
C Sampedro, F Gámiz, L Donetti, A Godoy
Solid-State Electronics 70, 101-105, 2012
Multi-subband ensemble Monte Carlo simulation of bulk MOSFETs for the 32nm-node and beyond
C Sampedro, F Gámiz, A Godoy, R Valín, A García-Loureiro, N Rodríguez, ...
Solid-State Electronics 65, 88-93, 2011
Calculation of the phonon-limited mobility in silicon Gate All-Around MOSFETs
A Godoy, F Ruiz, C Sampedro, F Gámiz, U Ravaioli
Solid-State Electronics 51 (9), 1211-1215, 2007
Modeling the channel charge and potential in quasi-ballistic nanoscale double-gate MOSFETs
A Mangla, JM Sallese, C Sampedro, F Gamiz, C Enz
IEEE Transactions on Electron Devices 61 (8), 2640-2646, 2014
Compact drain-current model for reproducing advanced transport models in nanoscale double-gate MOSFETs
M Cheralathan, C Sampedro, JB Roldán, F Gámiz, G Iannaccone, ...
Semiconductor science and technology 26 (9), 095015, 2011
Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices
C Medina-Bailon, JL Padilla, T Sadi, C Sampedro, A Godoy, L Donetti, ...
IEEE Transactions on Electron Devices 66 (3), 1145-1152, 2019
A parallel deterministic solver for the Schrödinger–Poisson–Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo
F Vecil, JM Mantas, MJ Cáceres, C Sampedro, A Godoy, F Gámiz
Computers & Mathematics with Applications 67 (9), 1703-1721, 2014
MS-EMC vs. NEGF: A comparative study accounting for transport quantum corrections
C Medina-Bailon, C Sampedro, JL Padilla, A Godoy, L Donetti, F Gamiz, ...
2018 Joint International EUROSOI Workshop and International Conference on …, 2018
Two-dimensional Monte Carlo simulation of DGSOI MOSFET misalignment
R Valin, C Sampedro, M Aldegunde, A Garcia-Loureiro, N Seoane, ...
IEEE Transactions on Electron Devices 59 (6), 1621-1628, 2012
Source-to-drain tunneling analysis in FDSOI, DGSOI, and FinFET devices by means of multisubband ensemble Monte Carlo
C Medina-Bailon, JL Padilla, C Sampedro, A Godoy, L Donetti, F Gamiz
IEEE Transactions on Electron Devices 65 (11), 4740-4746, 2018
3d multi-subband ensemble Monte Carlo simulator of FinFETs and nanowire transistors
C Sampedro, L Donetti, F Gamiz, A Godoy, FJ Garcia-Ruiz, VP Georgiev, ...
2014 International Conference on Simulation of Semiconductor Processes and …, 2014
Implementation of Band-to-Band Tunneling Phenomena in a Multisubband Ensemble Monte Carlo Simulator: Application to Silicon TFETs
C Medina-Bailon, JL Padilla, C Sampedro, C Alper, F Gamiz, AM Ionescu
IEEE Transactions on Electron Devices 64 (8), 3084-3091, 2017
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
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