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Jerome Saint-Martin
Jerome Saint-Martin
ENS Paris Saclay / Paris Saclay University
Correu electrònic verificat a ens-paris-saclay.fr - Pàgina d'inici
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Enhanced thermoelectric properties in graphene nanoribbons by resonant tunneling of electrons
F Mazzamuto, VH Nguyen, Y Apertet, C Caër, C Chassat, J Saint-Martin, ...
Physical Review B 83 (23), 235426, 2011
2062011
Thermoelectric effects in graphene nanostructures
P Dollfus, VH Nguyen, J Saint-Martin
Journal of Physics: Condensed Matter 27 (13), 133204, 2015
1972015
On the ballistic transport in nanometer-scaled DG MOSFETs
JS Martin, A Bournel, P Dollfus
IEEE Transactions on Electron Devices 51 (7), 1148-1155, 2004
1302004
On the ability of the particle Monte Carlo technique to include quantum effects in nano-MOSFET simulation
D Querlioz, J Saint-Martin, K Huet, A Bournel, V Aubry-Fortuna, C Chassat, ...
IEEE transactions on electron devices 54 (9), 2232-2242, 2007
972007
Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas
J Saint-Martin, A Bournel, F Monsef, C Chassat, P Dollfus
Semiconductor science and technology 21 (4), L29, 2006
762006
Comparison of multiple-gate MOSFET architectures using Monte Carlo simulation
J Saint-Martin, A Bournel, P Dollfus
Solid-State Electronics 50 (1), 94-101, 2006
682006
A study of quantum transport in end-of-roadmap DG-MOSFETs using a fully self-consistent Wigner Monte Carlo approach
D Querlioz, J Saint-Martin, VN Do, A Bournel, P Dollfus
IEEE transactions on nanotechnology 5 (6), 737-744, 2006
662006
Experimental investigation on the quasi-ballistic transport: Part I—Determination of a new backscattering coefficient extraction methodology
V Barral, T Poiroux, J Saint-Martin, D Munteanu, JL Autran, S Deleonibus
IEEE Transactions on Electron Devices 56 (3), 408-419, 2009
572009
Graphene nanomesh transistor with high on/off ratio and good saturation behavior
S Berrada, V Hung Nguyen, D Querlioz, J Saint-Martin, A Alarcón, ...
Applied Physics Letters 103 (18), 2013
552013
Optimizing the thermoelectric performance of graphene nano-ribbons without degrading the electronic properties
VT Tran, J Saint-Martin, P Dollfus, S Volz
Scientific reports 7 (1), 2313, 2017
532017
Wigner Monte Carlo simulation of phonon-induced electron decoherence in semiconductor nanodevices
D Querlioz, J Saint-Martin, A Bournel, P Dollfus
Physical Review B 78 (16), 165306, 2008
532008
High thermoelectric performance in graphene nanoribbons by graphene/BN interface engineering
VT Tran, J Saint-Martin, P Dollfus
Nanotechnology 26 (49), 495202, 2015
522015
Graphene nanomesh-based devices exhibiting a strong negative differential conductance effect
VH Nguyen, F Mazzamuto, J Saint-Martin, A Bournel, P Dollfus
Nanotechnology 23 (6), 065201, 2012
512012
Monte Carlo study of apparent mobility reduction in nano-MOSFETs
K Huet, J Saint-Martin, A Bournel, S Galdin-Retailleau, P Dollfus, ...
ESSDERC 2007-37th European Solid State Device Research Conference, 382-385, 2007
492007
Wigner-Boltzmann Monte Carlo approach to nanodevice simulation: from quantum to semiclassical transport
D Querlioz, HN Nguyen, J Saint-Martin, A Bournel, S Galdin-Retailleau, ...
Journal of computational electronics 8, 324-335, 2009
482009
Thermoelectric performance of disordered and nanostructured graphene ribbons using Green’s function method
F Mazzamuto, J Saint-Martin, VH Nguyen, C Chassat, P Dollfus
Journal of Computational Electronics 11, 67-77, 2012
472012
Enhanced thermoelectric figure of merit in vertical graphene junctions
V Hung Nguyen, MC Nguyen, HV Nguyen, J Saint-Martin, P Dollfus
Applied Physics Letters 105 (13), 2014
442014
Edge shape effect on vibrational modes in graphene nanoribbons: A numerical study
F Mazzamuto, J Saint-Martin, A Valentin, C Chassat, P Dollfus
Journal of Applied Physics 109 (6), 2011
432011
Giant effect of negative differential conductance in graphene nanoribbon pn hetero-junctions
V Hung Nguyen, F Mazzamuto, J Saint-Martin, A Bournel, P Dollfus
Applied Physics Letters 99 (4), 2011
392011
Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance
V Hung Nguyen, J Saint-Martin, D Querlioz, F Mazzamuto, A Bournel, ...
Journal of computational electronics 12, 85-93, 2013
382013
En aquests moments el sistema no pot dur a terme l'operació. Torneu-ho a provar més tard.
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