Follow
Albert Crespo
Albert Crespo
Verified email at uab.cat
Title
Cited by
Cited by
Year
SPICE compact modeling of bipolar/unipolar memristor switching governed by electrical thresholds
F García-Redondo, RP Gowers, A Crespo-Yepes, M López-Vallejo, ...
IEEE Transactions on Circuits and Systems I: Regular Papers 63 (8), 1255-1264, 2016
682016
Inkjet Printed HfO2-Based ReRAMs: First Demonstration and Performance Characterization
G Vescio, A Crespo-Yepes, D Alonso, S Claramunt, M Porti, R Rodriguez, ...
IEEE Electron Device Letters 38 (4), 457-460, 2017
302017
Analysis of Set and Reset mechanisms in Ni/HfO2-based RRAM with fast ramped voltages
M Maestro, J Martin-Martinez, J Diaz, A Crespo-Yepes, MB Gonzalez, ...
Microelectronic Engineering 147, 176-179, 2015
272015
Power-efficient noise-induced reduction of ReRAM cell’s temporal variability effects
V Ntinas, A Rubio, GC Sirakoulis, ES Aguilera, M Pedro, A Crespo-Yepes, ...
IEEE Transactions on Circuits and Systems II: Express Briefs 68 (4), 1378-1382, 2020
252020
New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM
M Maestro, J Diaz, A Crespo-Yepes, MB Gonzalez, J Martin-Martinez, ...
Solid-State Electronics 115, 140-145, 2016
252016
Recovery of the MOSFET and Circuit Functionality After the Dielectric Breakdown of Ultrathin High-Gate Stacks
A Crespo-Yepes, J Martin-Martinez, A Rothschild, R Rodriguez, M Nafria, ...
IEEE electron device letters 31 (6), 543-545, 2010
212010
MOSFET degradation dependence on input signal power in a RF power amplifier
A Crespo-Yepes, E Barajas, J Martin-Martinez, D Mateo, X Aragones, ...
Microelectronic Engineering 178, 289-292, 2017
202017
Low-Power, High-Performance, Non-volatile Inkjet-Printed HfO2-Based Resistive Random Access Memory: From Device to Nanoscale Characterization
G Vescio, G Martin, A Crespo-Yepes, S Claramunt, D Alonso, ...
ACS applied materials & interfaces 11 (26), 23659-23666, 2019
192019
Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses
A Crespo-Yepes, J Martín-Martínez, R Rodríguez, M Nafria, X Aymerich
Microelectronics Reliability 49 (9-11), 1024-1028, 2009
192009
Aging in CMOS RF linear power amplifiers: an experimental study
X Aragones, E Barajas, A Crespo-Yepes, D Mateo, R Rodriguez, ...
IEEE Transactions on Microwave Theory and Techniques 69 (2), 1453-1463, 2020
142020
Electrical characterization and modeling of 1T-1R RRAM arrays with amorphous and poly-crystalline HfO2
A Grossi, C Zambelli, P Olivo, A Crespo-Yepes, J Martin-Martinez, ...
Solid-State Electronics 128, 187-193, 2017
142017
Resistive switching-like behavior of the dielectric breakdown in ultra-thin Hf based gate stacks in MOSFETs
A Crespo-Yepes, J Martin-Martinez, A Rothschild, R Rodriguez, M Nafria, ...
Solid-state electronics 65, 157-162, 2011
142011
Experimental verification of memristor-based material implication NAND operation
M Maestro-Izquierdo, J Martin-Martinez, AC Yepes, M Escudero, ...
IEEE Transactions on Emerging Topics in Computing 7 (4), 545-552, 2017
102017
DC characterization and fast small-signal parameter extraction of organic thin film transistors with different geometries
A Arnal, A Crespo-Yepes, E Ramon, L Teres, R Rodríguez, M Nafria
IEEE Electron Device Letters 41 (10), 1512-1515, 2020
82020
Design of a Broadband CMOS RF Power Amplifier to establish device-circuit aging correlations
E Barajas, D Mateo, X Aragones, A Crespo-Yepes, R Rodriguez, ...
2017 International Conference of Microelectronic Test Structures (ICMTS), 1-3, 2017
82017
Aging in CMOS RF linear power amplifiers: experimental comparison and modeling
X Aragones, D Mateo, E Barajas, A Crespo-Yepes, R Rodríguez, ...
2019 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2019
72019
Experimental Time Evolution Study of the HfO2-Based IMPLY Gate Operation
M Maestro-Izquierdo, J Martin-Martinez, AC Yepes, M Escudero, ...
IEEE Transactions on Electron Devices 65 (2), 404-410, 2018
72018
Intra-device statistical parameters in variability-aware modelling of resistive switching devices
A Crespo-Yepes, J Martin-Martinez, I Rama, M Maestro, R Rodriguez, ...
2016 Joint International EUROSOI Workshop and International Conference on …, 2016
72016
Beneficial role of noise in hf-based memristors
R Rodriguez, J Martin-Martinez, E Salvador, A Crespo-Yepes, E Miranda, ...
2022 IEEE International Symposium on Circuits and Systems (ISCAS), 975-979, 2022
42022
Exploiting the KPFM capabilities to analyze at the nanoscale the impact of electrical stresses on OTFTs properties
A Ruiz, S Claramunt, A Crespo-Yepes, M Porti, M Nafria, H Xu, C Liu, ...
Solid-State Electronics 186, 108061, 2021
42021
The system can't perform the operation now. Try again later.
Articles 1–20