SPICE compact modeling of bipolar/unipolar memristor switching governed by electrical thresholds F García-Redondo, RP Gowers, A Crespo-Yepes, M López-Vallejo, ...
IEEE Transactions on Circuits and Systems I: Regular Papers 63 (8), 1255-1264, 2016
72 2016 Inkjet Printed HfO2 -Based ReRAMs: First Demonstration and Performance Characterization G Vescio, A Crespo-Yepes, D Alonso, S Claramunt, M Porti, R Rodriguez, ...
IEEE Electron Device Letters 38 (4), 457-460, 2017
31 2017 Analysis of Set and Reset mechanisms in Ni/HfO2-based RRAM with fast ramped voltages M Maestro, J Martin-Martinez, J Diaz, A Crespo-Yepes, MB Gonzalez, ...
Microelectronic Engineering 147, 176-179, 2015
27 2015 Power-efficient noise-induced reduction of ReRAM cell’s temporal variability effects V Ntinas, A Rubio, GC Sirakoulis, ES Aguilera, M Pedro, A Crespo-Yepes, ...
IEEE Transactions on Circuits and Systems II: Express Briefs 68 (4), 1378-1382, 2020
25 2020 New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM M Maestro, J Diaz, A Crespo-Yepes, MB Gonzalez, J Martin-Martinez, ...
Solid-State Electronics 115, 140-145, 2016
25 2016 Recovery of the MOSFET and Circuit Functionality After the Dielectric Breakdown of Ultrathin High- Gate Stacks A Crespo-Yepes, J Martin-Martinez, A Rothschild, R Rodriguez, M Nafria, ...
IEEE electron device letters 31 (6), 543-545, 2010
21 2010 MOSFET degradation dependence on input signal power in a RF power amplifier A Crespo-Yepes, E Barajas, J Martin-Martinez, D Mateo, X Aragones, ...
Microelectronic Engineering 178, 289-292, 2017
20 2017 Low-Power, High-Performance, Non-volatile Inkjet-Printed HfO2 -Based Resistive Random Access Memory: From Device to Nanoscale Characterization G Vescio, G Martin, A Crespo-Yepes, S Claramunt, D Alonso, ...
ACS applied materials & interfaces 11 (26), 23659-23666, 2019
19 2019 Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses A Crespo-Yepes, J Martín-Martínez, R Rodríguez, M Nafria, X Aymerich
Microelectronics Reliability 49 (9-11), 1024-1028, 2009
19 2009 Electrical characterization and modeling of 1T-1R RRAM arrays with amorphous and poly-crystalline HfO2 A Grossi, C Zambelli, P Olivo, A Crespo-Yepes, J Martin-Martinez, ...
Solid-State Electronics 128, 187-193, 2017
15 2017 Aging in CMOS RF linear power amplifiers: an experimental study X Aragones, E Barajas, A Crespo-Yepes, D Mateo, R Rodriguez, ...
IEEE Transactions on Microwave Theory and Techniques 69 (2), 1453-1463, 2020
14 2020 Resistive switching-like behavior of the dielectric breakdown in ultra-thin Hf based gate stacks in MOSFETs A Crespo-Yepes, J Martin-Martinez, A Rothschild, R Rodriguez, M Nafria, ...
Solid-state electronics 65, 157-162, 2011
14 2011 Experimental verification of memristor-based material implication NAND operation M Maestro-Izquierdo, J Martin-Martinez, AC Yepes, M Escudero, ...
IEEE Transactions on Emerging Topics in Computing 7 (4), 545-552, 2017
10 2017 DC characterization and fast small-signal parameter extraction of organic thin film transistors with different geometries A Arnal, A Crespo-Yepes, E Ramon, L Teres, R Rodríguez, M Nafria
IEEE Electron Device Letters 41 (10), 1512-1515, 2020
9 2020 Design of a Broadband CMOS RF Power Amplifier to establish device-circuit aging correlations E Barajas, D Mateo, X Aragones, A Crespo-Yepes, R Rodriguez, ...
2017 International Conference of Microelectronic Test Structures (ICMTS), 1-3, 2017
8 2017 Aging in CMOS RF linear power amplifiers: experimental comparison and modeling X Aragones, D Mateo, E Barajas, A Crespo-Yepes, R Rodríguez, ...
2019 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2019
7 2019 Experimental Time Evolution Study of the HfO2 -Based IMPLY Gate Operation M Maestro-Izquierdo, J Martin-Martinez, AC Yepes, M Escudero, ...
IEEE Transactions on Electron Devices 65 (2), 404-410, 2018
7 2018 Intra-device statistical parameters in variability-aware modelling of resistive switching devices A Crespo-Yepes, J Martin-Martinez, I Rama, M Maestro, R Rodriguez, ...
2016 Joint International EUROSOI Workshop and International Conference on …, 2016
7 2016 Exploiting the KPFM capabilities to analyze at the nanoscale the impact of electrical stresses on OTFTs properties A Ruiz, S Claramunt, A Crespo-Yepes, M Porti, M Nafria, H Xu, C Liu, ...
Solid-State Electronics 186, 108061, 2021
5 2021 Beneficial role of noise in hf-based memristors R Rodriguez, J Martin-Martinez, E Salvador, A Crespo-Yepes, E Miranda, ...
2022 IEEE International Symposium on Circuits and Systems (ISCAS), 975-979, 2022
4 2022