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Pedram Khalili
Pedram Khalili
Associate Professor at Northwestern University
Verified email at northwestern.edu - Homepage
Title
Cited by
Cited by
Year
Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields
G Yu, P Upadhyaya, Y Fan, JG Alzate, W Jiang, KL Wong, S Takei, ...
Nature nanotechnology 9 (7), 548-554, 2014
9632014
Low-power non-volatile spintronic memory: STT-RAM and beyond
KL Wang, JG Alzate, PK Amiri
Journal of Physics D: Applied Physics 46 (7), 074003, 2013
6422013
Room-temperature creation and spin–orbit torque manipulation of skyrmions in thin films with engineered asymmetry
G Yu, P Upadhyaya, X Li, W Li, SK Kim, Y Fan, KL Wong, Y Tserkovnyak, ...
Nano letters 16 (3), 1981-1988, 2016
3422016
Voltage-induced ferromagnetic resonance in magnetic tunnel junctions
J Zhu, JA Katine, GE Rowlands, YJ Chen, Z Duan, JG Alzate, ...
Physical review letters 108 (19), 197203, 2012
3082012
Strong Rashba-Edelstein effect-induced spin–orbit torques in monolayer transition metal dichalcogenide/ferromagnet bilayers
Q Shao, G Yu, YW Lan, Y Shi, MY Li, C Zheng, X Zhu, LJ Li, PK Amiri, ...
Nano letters 16 (12), 7514-7520, 2016
3032016
Room-temperature skyrmion shift device for memory application
G Yu, P Upadhyaya, Q Shao, H Wu, G Yin, X Li, C He, W Jiang, X Han, ...
Nano letters 17 (1), 261-268, 2017
2852017
Ultralow-current-density and bias-field-free spin-transfer nano-oscillator
Z Zeng, G Finocchio, B Zhang, PK Amiri, JA Katine, IN Krivorotov, Y Huai, ...
Scientific reports 3 (1), 1426, 2013
2522013
Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product
C Grezes, F Ebrahimi, JG Alzate, X Cai, JA Katine, J Langer, B Ocker, ...
Applied Physics Letters 108 (1), 2016
2372016
Low writing energy and sub nanosecond spin torque transfer switching of in-plane magnetic tunnel junction for spin torque transfer random access memory
H Zhao, A Lyle, Y Zhang, PK Amiri, G Rowlands, Z Zeng, J Katine, H Jiang, ...
Journal of Applied Physics 109 (7), 2011
2362011
Switching current reduction using perpendicular anisotropy in CoFeB–MgO magnetic tunnel junctions
P Khalili Amiri, ZM Zeng, J Langer, H Zhao, G Rowlands, YJ Chen, ...
Applied Physics Letters 98 (11), 2011
2232011
Electrical control of reversible and permanent magnetization reorientation for magnetoelectric memory devices
T Wu, A Bur, K Wong, P Zhao, CS Lynch, PK Amiri, KL Wang, GP Carman
Applied Physics Letters 98 (26), 2011
2012011
Voltage-controlled magnetic anisotropy in spintronic devices
PK Amiri, KL Wang
Spin 2 (03), 1240002, 2012
1922012
Electric-field-induced spin wave generation using multiferroic magnetoelectric cells
S Cherepov, P Khalili Amiri, JG Alzate, K Wong, M Lewis, P Upadhyaya, ...
Applied Physics Letters 104 (8), 2014
1892014
Fast and programmable locomotion of hydrogel-metal hybrids under light and magnetic fields
C Li, GC Lau, H Yuan, A Aggarwal, VL Dominguez, S Liu, H Sai, ...
Science robotics 5 (49), eabb9822, 2020
1772020
Electric-field-controlled magnetoelectric RAM: Progress, challenges, and scaling
PK Amiri, JG Alzate, XQ Cai, F Ebrahimi, Q Hu, K Wong, C Grèzes, H Lee, ...
IEEE Transactions on Magnetics 51 (11), 1-7, 2015
1762015
Giant spin-torque diode sensitivity in the absence of bias magnetic field
B Fang, M Carpentieri, X Hao, H Jiang, JA Katine, IN Krivorotov, B Ocker, ...
Nature communications 7 (1), 11259, 2016
1722016
Temperature dependence of the voltage-controlled perpendicular anisotropy in nanoscale MgO| CoFeB| Ta magnetic tunnel junctions
JG Alzate, P Khalili Amiri, G Yu, P Upadhyaya, JA Katine, J Langer, ...
Applied physics letters 104 (11), 2014
1612014
Magnetization switching through spin-Hall-effect-induced chiral domain wall propagation
G Yu, P Upadhyaya, KL Wong, W Jiang, JG Alzate, J Tang, PK Amiri, ...
Physical Review B 89 (10), 104421, 2014
1572014
High-power coherent microwave emission from magnetic tunnel junction nano-oscillators with perpendicular anisotropy
Z Zeng, PK Amiri, IN Krivorotov, H Zhao, G Finocchio, JP Wang, JA Katine, ...
ACS nano 6 (7), 6115-6121, 2012
1512012
Voltage-controlled magnetic memory element with canted magnetization
KL Wang, PK Amiri, JG Alzate
US Patent 9,036,407, 2015
1262015
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