Michele Amato
Michele Amato
Assistant Professor, Laboratoire de Physique des Solides, Université Paris-Saclay, Orsay, France
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Citado por
Citado por
Coherent ultrafast charge transfer in an organic photovoltaic blend
SM Falke, CA Rozzi, D Brida, M Maiuri, M Amato, E Sommer, A De Sio, ...
Science 344 (6187), 1001-1005, 2014
Silicon–germanium nanowires: chemistry and physics in play, from basic principles to advanced applications
M Amato, M Palummo, R Rurali, S Ossicini
Chemical reviews 114 (2), 1371-1412, 2014
Nanometric Resolved Luminescence in h-BN Flakes: Excitons and Stacking Order
R Bourrellier, M Amato, LHG Tizei, C Giorgetti, A Gloter, MI Heggie, ...
ACS Photonics 1 (9), 857–862, 2014
Band-offset driven efficiency of the doping of SiGe core− shell nanowires
M Amato, S Ossicini, R Rurali
Nano letters 11 (2), 594-598, 2011
Nanoscale thermoelectrics
X Wang, ZM Wang
Springer, 2014
SiGe nanowires: Structural stability, quantum confinement, and electronic properties
M Amato, M Palummo, S Ossicini
Physical Review B 80 (23), 235333, 2009
Reduced quantum confinement effect and electron-hole separation in SiGe nanowires
M Amato, M Palummo, S Ossicini
Physical Review B 79 (20), 201302, 2009
Silicon and germanium nanostructures for photovoltaic applications: ab-initio results
S Ossicini, M Amato, R Guerra, M Palummo, O Pulci
Nanoscale research letters 5 (10), 1637-1649, 2010
Carbon nanotube electrodes in organic transistors
I Valitova, M Amato, F Mahvash, G Cantele, A Maffucci, C Santato, ...
Nanoscale 5 (11), 4638-4646, 2013
Crystal phase effects in Si nanowire polytypes and their homojunctions
M Amato, T Kaewmaraya, A Zobelli, M Palummo, R Rurali
Nano letters 16 (9), 5694-5700, 2016
Surface physics of semiconducting nanowires
M Amato, R Rurali
Progress in Surface Science 91 (1), 1-28, 2016
Crystalline, phononic, and electronic properties of heterostructured polytypic Ge nanowires by Raman spectroscopy
C Fasolato, M De Luca, D Djomani, L Vincent, C Renard, G Di Iorio, ...
Nano letters 18 (11), 7075-7084, 2018
Electron Transport in SiGe Alloy Nanowires in the Ballistic Regime from First-Principles
M Amato, S Ossicini, R Rurali
Nano letters 12 (6), 2717-2721, 2012
Accurate estimation of band offsets in group IV polytype junctions: a first-principles study
T Kaewmaraya, L Vincent, M Amato
The Journal of Physical Chemistry C 121 (10), 5820-5828, 2017
Ab initio optoelectronic properties of SiGe nanowires: Role of many-body effects
M Palummo, M Amato, S Ossicini
Physical Review B 82 (7), 073305, 2010
Band structure analysis in SiGe nanowires
M Amato, M Palummo, S Ossicini
Materials Science and Engineering: B 177 (10), 705-711, 2012
Segregation, quantum confinement effect and band offset for [110] SiGe NWs
M Amato, M Palummo, S Ossicini
physica status solidi (b) 247 (8), 2096-2101, 2010
Tailoring strain and morphology of core–shell SiGe nanowires by low-temperature ge condensation
T David, K Liu, A Ronda, L Favre, M Abbarchi, M Gailhanou, P Gentile, ...
Nano letters 17 (12), 7299-7305, 2017
Work function measurement of silicon germanium heterostructures combining kelvin force microscopy and x-ray photoelectron emission microscopy
S Pouch, M Amato, M Bertocchi, S Ossicini, N Chevalier, T Mélin, ...
The Journal of Physical Chemistry C 119 (47), 26776-26782, 2015
Preferential Positioning, Stability, and Segregation of Dopants in Hexagonal Si Nanowires
M Amato, S Ossicini, E Canadell, R Rurali
Nano letters 19 (2), 866-876, 2019
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