Chandan Joishi

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Siddharth RajanElectrical and Computer Engineering, Ohio State UniversityDirección de correo verificada de ece.osu.edu
Zhanbo XiaPost Doctoral Scholar, ECE, The Ohio State UniversityDirección de correo verificada de osu.edu
Saurabh LodhaProfessor, Electrical Engineering, IIT BombayDirección de correo verificada de ee.iitb.ac.in
Yuewei ZhangUCSBDirección de correo verificada de ucsb.edu
Joe McGloneResearch Scientist, ECE and IMR at Ohio State UniversityDirección de correo verificada de osu.edu
Aaron ArehartAssistant Research Professor of Electrical and Computer Engineering, The Ohio State UniversityDirección de correo verificada de osu.edu
Steven RingelThe Ohio State UniversityDirección de correo verificada de osu.edu
Jinwoo HwangAssociate Professor, Materials Science and Engineering, Ohio State UniversityDirección de correo verificada de osu.edu
Nidhin Kurian KalarickalAssistant Professor, Electrical Computer and Energy Engineering, Arizona State UniversityDirección de correo verificada de asu.edu
Sanyam BajajIntel CorporationDirección de correo verificada de intel.com
Sriram KrishnamoorthyUniversity of California, Santa BarbaraDirección de correo verificada de ucsb.edu
Shahadat Hasan SohelIntelDirección de correo verificada de intel.com
Jared M JohnsonThe Ohio State UniversityDirección de correo verificada de thermofisher.com
Adam T. NealAir Force Research LabDirección de correo verificada de us.af.mil
Gregg JessenMACOMDirección de correo verificada de macom.com
Shin MouAir Force Research LaboratoryDirección de correo verificada de us.af.mil
heremans jThe Ohio State UniversityDirección de correo verificada de osu.edu
Donald DorseyMaterials Research EngineerDirección de correo verificada de ARCTOS-US.COM
Kelson ChabakAir Force Research LaboratoryDirección de correo verificada de us.af.mil
wenyuan sunDirección de correo verificada de osu.edu

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Chandan Joishi

Post Doctoral Researcher, ECE, The Ohio State University

Dirección de correo verificada de osu.edu

Semiconductor Devices Gallium Oxide Gallium Nitride Aluminum Gallium Nitride Gate Stack Reliability


Título Ordenar por citas Ordenar por año Ordenar por título	Citado por Citado por	Año
Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x) 2O3/Ga2O3 heterostructures Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ... Applied Physics Letters 112 (17), 2018	357	2018
Modulation-doped β-(Al0. 2Ga0. 8) 2O3/Ga2O3 field-effect transistor S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ... Applied Physics Letters 111 (2), 2017	309	2017
Demonstration of β-(AlxGa1-x) 2O3/Ga2O3 double heterostructure field effect transistors Y Zhang, C Joishi, Z Xia, M Brenner, S Lodha, S Rajan Applied physics letters 112 (23), 2018	170	2018
-Ga₂O₃ Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz Z Xia, H Xue, C Joishi, J Mcglone, NK Kalarickal, SH Sohel, M Brenner, ... IEEE Electron Device Letters 40 (7), 1052-1055, 2019	154	2019
Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes C Joishi, S Rafique, Z Xia, L Han, S Krishnamoorthy, Y Zhang, S Lodha, ... Applied Physics Express 11 (3), 031101, 2018	152	2018
Delta Doped -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts Z Xia, C Joishi, S Krishnamoorthy, S Bajaj, Y Zhang, M Brenner, S Lodha, ... IEEE Electron Device Letters 39 (4), 568-571, 2018	141	2018
Breakdown Characteristics of -(Al_0.22Ga_0.78)₂O₃/Ga₂O₃ Field-Plated Modulation-Doped Field-Effect Transistors C Joishi, Y Zhang, Z Xia, W Sun, AR Arehart, S Ringel, S Lodha, S Rajan IEEE Electron Device Letters 40 (8), 1241-1244, 2019	104	2019
Trapping Effects in Si-Doped-Ga₂O₃MESFETs on an Fe-Doped-Ga₂O₃Substrate JF McGlone, Z Xia, Y Zhang, C Joishi, S Lodha, S Rajan, SA Ringel, ... IEEE Electron Device Letters 39 (7), 1042-1045, 2018	99	2018
Evaluation of Low-Temperature Saturation Velocity in -(Al_xGa_1–x)₂O₃/Ga₂O₃ Modulation-Doped Field-Effect Transistors Y Zhang, Z Xia, J Mcglone, W Sun, C Joishi, AR Arehart, SA Ringel, ... IEEE Transactions on Electron Devices 66 (3), 1574-1578, 2019	92	2019
Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors C Joishi, Z Xia, J McGlone, Y Zhang, AR Arehart, S Ringel, S Lodha, ... Applied Physics Letters 113 (12), 2018	73	2018
MBE-Grown-Ga₂O₃-Based Schottky UV-C Photodetectors With Rectification Ratio ~10⁷ AS Pratiyush, Z Xia, S Kumar, Y Zhang, C Joishi, R Muralidharan, S Rajan, ... IEEE Photonics Technology Letters 30 (23), 2025-2028, 2018	62	2018
Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs JF McGlone, Z Xia, C Joishi, S Lodha, S Rajan, S Ringel, AR Arehart Applied Physics Letters 115 (15), 2019	54	2019
Deep-Recessed β-Ga₂O₃ Delta-Doped Field-Effect Transistors With In Situ Epitaxial Passivation C Joishi, Z Xia, JS Jamison, SH Sohel, RC Myers, S Lodha, S Rajan IEEE Transactions on Electron Devices 67 (11), 4813-4819, 2020	34	2020
Enhanced n-type β-Ga2O3 (2¯ 01) gate stack performance using Al2O3/SiO2 bi-layer dielectric D Biswas, C Joishi, J Biswas, K Thakar, S Rajan, S Lodha Applied physics letters 114 (21), 2019	30	2019
Electrothermal Characteristics of Delta-Doped -Ga₂O₃ Metal–Semiconductor Field-Effect Transistors N Kumar, C Joishi, Z Xia, S Rajan, S Kumar IEEE Transactions on Electron Devices 66 (12), 5360-5366, 2019	24	2019
β-Ga2O3 Schottky barrier diodes with 4.1 MV/cm field strength by deep plasma etching field-termination S Dhara, NK Kalarickal, A Dheenan, C Joishi, S Rajan Applied Physics Letters 121 (20), 2022	20	2022
Ultrafast Thermoreflectance Imaging and Electrothermal Modeling of β-Ga₂O₃ MESFETs N Kumar, D Vaca, C Joishi, Z Xia, S Rajan, S Kumar IEEE Electron Device Letters 41 (4), 641-644, 2020	12	2020
Improved n-channel Ge gate stack performance using HfAlO high-k dielectric for various Al concentrations S Kothari, C Joishi, S Ghosh, D Biswas, D Vaidya, S Ganguly, S Lodha Applied Physics Express 9 (7), 071302, 2016	11	2016
β-Ga2O3 trench Schottky diodes by low-damage Ga-atomic beam etching S Dhara, NK Kalarickal, A Dheenan, SI Rahman, C Joishi, S Rajan Applied Physics Letters 123 (2), 2023	10	2023
Electro-Thermal Simulation of Delta-Doped -Ga₂O₃ Field Effect Transistors N Kumar, C Joishi, Z Xia, S Rajan, S Kumar 2019 18th IEEE Intersociety Conference on Thermal and Thermomechanical …, 2019	8	2019

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