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Dongsheng Fan
Dongsheng Fan
Dirección de correo verificada de email.uark.edu
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Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator pn junction
Z Zeng, TA Morgan, D Fan, C Li, Y Hirono, X Hu, Y Zhao, JS Lee, J Wang, ...
AIP Advances 3 (7), 2013
882013
Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi
JA Steele, RA Lewis, J Horvat, MJB Nancarrow, M Henini, D Fan, ...
Scientific reports 6 (1), 28860, 2016
412016
Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration
JA Steele, RA Lewis, M Henini, OM Lemine, D Fan, YI Mazur, ...
Optics express 22 (10), 11680-11689, 2014
352014
MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures
D Fan, PC Grant, SQ Yu, VG Dorogan, X Hu, Z Zeng, C Li, ME Hawkridge, ...
Journal of Vacuum Science & Technology B 31 (3), 2013
272013
Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures
D Fan, Z Zeng, X Hu, VG Dorogan, C Li, M Benamara, ME Hawkridge, ...
Applied Physics Letters 101 (18), 2012
252012
Bismuth nano-droplets for group-V based molecular-beam droplet epitaxy
C Li, ZQ Zeng, DS Fan, Y Hirono, J Wu, TA Morgan, X Hu, SQ Yu, ...
Applied Physics Letters 99 (24), 2011
252011
InGaAs quantum well grown on high-index surfaces for superluminescent diode applications
Z Li, J Wu, ZM Wang, D Fan, A Guo, S Li, SQ Yu, O Manasreh, GJ Salamo
Nanoscale research letters 5, 1079-1084, 2010
252010
Rapid thermal annealing effect on GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy
PC Grant, D Fan, A Mosleh, SQ Yu, VG Dorogan, ME Hawkridge, ...
Journal of Vacuum Science & Technology B 32 (2), 2014
242014
Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy
D Fan, Z Zeng, VG Dorogan, Y Hirono, C Li, YI Mazur, SQ Yu, ...
Journal of Materials Science: Materials in Electronics 24, 1635-1639, 2013
232013
Low temperature magneto-photoluminescence of GaAsBi/GaAs quantum well heterostructures
YI Mazur, MD Teodoro, L Dias de Souza, ME Ware, D Fan, SQ Yu, ...
Journal of Applied Physics 115 (12), 2014
112014
Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1− xBix/GaAs heterostructures
YI Mazur, VG Dorogan, LD De Souza, D Fan, M Benamara, ...
Nanotechnology 25 (3), 035702, 2013
92013
AIP Adv. 3, 072112 (2013)
Z Zeng, TA Morgan, D Fan, C Li, Y Hirono, X Hu, Y Zhao, JS Lee, J Wang, ...
9
Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructures
JA Steele, J Horvat, RA Lewis, M Henini, D Fan, YI Mazur, VG Dorogan, ...
Nanoscale 7 (48), 20442-20450, 2015
82015
Nanoscale Res. 2010
T Li, J Wu, ZM Wang, D Fan, A Guo, S Li, SQ Yu, O Manasreh, GJ Salamo
Bibcode, 0
5
Luminescent properties of GaAsBi/GaAs double quantum well heterostructures
YI Mazur, VG Dorogan, L Dias, D Fan, M Schmidbauer, ME Ware, ...
Journal of Luminescence 188, 209-216, 2017
42017
Implementation of new reticle inspection technology for progressive mask defect detection strategy in wafer fabs
C Liu, A Lu, C Wang, E Guo, D Fan, L Yun, S Liu, R Badoni, E Lu
Photomask and Next-Generation Lithography Mask Technology XV 7028, 704-710, 2008
22008
Molecular beam epitaxial growth of Bi {sub 2} Te {sub 3} and Sb {sub 2} Te {sub 3} topological insulators on GaAs (111) substrates: a potential route to fabricate topological …
Z Zeng, TA Morgan, C Li, Y Hirono, X Hu, ME Hawkridge, M Benamara, ...
AIP Advances 3 (7), 2013
12013
Printability study of reticle defects on wafer using Reticle Defect Review on E-beam review tools
CS Cho, R Taylor, A Mungmode, D Fan, D Spivak, J Camp, H Xiao
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC …, 2015
2015
Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs {sub 1− x} Bi {sub x}/GaAs heterostructures
YI Mazur, VG Dorogan, LD De Souza, M Benamara, ME Ware, GJ Salamo, ...
Nanotechnology (Print) 25, 2013
2013
III-V bismide optoelectronic devices
D Fan
University of Arkansas, 2013
2013
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