| Electrical characterization of (Ni/Au)/Al0. 25Ga0. 75N/GaN/SiC Schottky barrier diode S Saadaoui, M Mongi Ben Salem, M Gassoumi, H Maaref, C Gaquière Journal of Applied Physics 110 (1), 2011 | 85 | 2011 |
| Anomaly and defects characterization by I-V and current deep level transient spectroscopy of Al0.25Ga0.75N/GaN/SiC high electron-mobility transistors S Saadaoui, MM Ben Salem, M Gassoumi, H Maaref, C Gaquière Journal of Applied Physics 111 (7), 073713, 2012 | 27 | 2012 |
| The effects of gate length variation and trapping effects on the transient response of AlGaN/GaN HEMT’s on SiC substrates M Gassoumi, MMB Salem, S Saadaoui, B Grimbert, J Fontaine, H Maaref Microelectronic engineering 88 (4), 370-372, 2011 | 27 | 2011 |
| Leakage current, capacitance hysteresis and deep traps in Al0. 25Ga0. 75N/GaN/SiC high-electron-mobility transistors S Saadaoui, MMB Salem, O Fathallah, M Gassoumi, C Gaquière, ... Physica B: Condensed Matter 412, 126-129, 2013 | 22 | 2013 |
| Effects of current transportation and deep traps on leakage current and capacitance hysteresis of AlGaN/GaN HEMT S Saadaoui, O Fathallah, H Maaref Materials Science in Semiconductor Processing 115, 105100, 2020 | 18 | 2020 |
| Hole trap, leakage current and barrier inhomogeneity in (Pt/Au) Al0. 2Ga0. 8N/GaN heterostructures S Saadaoui, O Fathallah, F Albouchi, MMB Salem, C Gaquière, H Maaref Journal of Physics and Chemistry of Solids, 2019 | 15 | 2019 |
| Effects of gate length on GaN HEMT performance at room temperature S Saadaoui, O Fathallah, H Maaref Journal of Physics and Chemistry of Solids 161, 110418, 2022 | 13 | 2022 |
| Mathematical modeling of mixed convective MHD Falkner-Skan squeezed Sutterby multiphase flow with non-Fourier heat flux theory and porosity LI Shuguang, MI KHAN, F ALI, SS ABDULLAEV, H S SAADAOUI Applied Mathematics and Mechanics 44 (11), 2005-2018, 2023 | 12 | 2023 |
| Energy levels and nonlinear optical properties of spheroid-shaped CdTe/ZnTe core/shell quantum dot S Hértilli, N Yahyaoui, N Zeiri, S Saadaoui, M Said Optics & Laser Technology 155, 108425, 2022 | 9 | 2022 |
| Characterization of AlGaN/GaN High Electron Mobility Transistor Grown on Silicon Carbide Devices with a Gate Length L g= 0.15 μm M Gassoumi, MMB Salem, S Saadaoui, W Chikhaoui, C Gaquière, ... Sensor Letters 9 (6), 2178-2181, 2011 | 7 | 2011 |
| Simultaneous effect of the capped matrix and the geometric factors of CdS/ZnSe spheroidal quantum dots on the linear and nonlinear optical properties A Cherni, N Yahyaoui, N Zeiri, M Said, S Saadaoui Optical and Quantum Electronics 55 (3), 273, 2023 | 6 | 2023 |
| Simultaneous effect study of eccentricity and capping matrix on effective dielectric function in spheroidal CdSe/ZnSe core/shell quantum dot N Yahyaoui, A Jbeli, N Zeiri, S Saadaoui, M Said Micro and Nanostructures 168, 207332, 2022 | 6 | 2022 |
| Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode M Gassoumi, S Saadaoui, MMB Salem, C Gaquière, H Maaref The European Physical Journal-Applied Physics 55 (3), 30101, 2011 | 6 | 2011 |
| Effects of the drain width on the electrical behavior of deep defect in AlGaN/GaN/SiC HEMTs O Fathallah, M Gassoumi, S Saadaoui, B Grimbert, C Gaquière, H Maaref 2010 27th International Conference on Microelectronics Proceedings, 479-481, 2010 | 3 | 2010 |
| Fermi level pinning, capacitance hysteresis, tunnel effect, and deep level in AlGaN/GaN high-electron-mobility transistor S Saadaoui, O Fathallah, H Maaref Superlattices and Microstructures 156, 106959, 2021 | 2 | 2021 |
| Towards a spatiotemporal data warehouse for epidemiological surveillance B Amin, H Djamila Journal homepage: http://iieta. org/Journals/i2m 18 (1), 1-7, 2019 | 2 | 2019 |
| HassenMaaref, and Christophe Gaquière S Saadaoui, MMB Salem, M Gassoumi J. Appl. Phys 110, 013701, 2011 | 2 | 2011 |
| Photoionization cross-section and polarizability of impurity in CdS/ZnS core/shell quantum dots capped in a dielectric matrix N Zeiri, A Cherni, N Yahyaoui, P Baser, M Said, S Saadaoui Solid State Communications 368, 115181, 2023 | 1 | 2023 |
| Deep Traps and Parasitic Effects in Al0. 25Ga0. 75N/GaN/SiC Heterostructures with Different Schottky Contact Surfaces S Saadaoui, O Fathallah, MMB Salem, C Gaquière, H Maaref Open Access Library Journal 2 (08), 1, 2015 | 1 | 2015 |
| WITHDRAWN: Investigation of barrier inhomogeneity induced by a non-uniform distribution and traps in (Ni-Au)/Al0. 25Ga0. 75N/GaN/SiC heterostructures with various Schottky … S Saadaoui, MMB Salem, C Gaquière, H Maaref Superlattices and Microstructures, 2013 | 1 | 2013 |
