| Analysis of limits for sapphire growth in a micro-pulling-down system G Samanta, A Yeckel, P Daggolu, H Fang, ED Bourret-Courchesne, ... Journal of Crystal Growth 335 (1), 148-159, 2011 | 30 | 2011 |
| Methods for producing low oxygen silicon ingots S Basak, CM Hudson, G Samanta, JW Ryu, H Sreedharamurthy, ... US Patent 9,951,440, 2018 | 20 | 2018 |
| Velocity and conformation statistics based on reduced Karhunen–Loeve projection data from DNS of viscoelastic turbulent channel flow G Samanta, AN Beris, RA Handler, KD Housiadas Journal of non-newtonian fluid mechanics 160 (1), 55-63, 2009 | 19 | 2009 |
| Time-evolution K–L analysis of coherent structures based on DNS of turbulent Newtonian and viscoelastic flows G Samanta, GM Oxberry, AN Beris, RA Handler, KD Housiadas Journal of Turbulence, N41, 2008 | 17 | 2008 |
| Effects of viscoelasticity on the probability density functions in turbulent channel flow G Samanta, KD Housiadas, RA Handler, AN Beris Physics of Fluids 21 (11), 2009 | 14 | 2009 |
| Parametric sensitivity and temporal dynamics of sapphire crystal growth via the micro-pulling-down method G Samanta, A Yeckel, ED Bourret-Courchesne, JJ Derby Journal of crystal growth 359, 99-106, 2012 | 10 | 2012 |
| Methods for producing single crystal ingots doped with volatile dopants S Basak, G Samanta, S Zepeda, CV Luers, SL Kimbel, CM Hudson, ... US Patent App. 15/570,955, 2018 | 8 | 2018 |
| Systems and methods for production of low oxygen content silicon G Samanta, P Daggolu, S Bhagavat, S Basak, N Zhang US Patent 10,745,823, 2020 | 6 | 2020 |
| Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size Z Lu, G Samanta, TW Lu, FC Tsai US Patent 11,111,602, 2021 | 5 | 2021 |
| Nitrogen Doped and Vacancy Dominated Silicon Ingot and Thermally Treated Wafer Formed Therefrom Having Radially Uniformly Distributed Oxygen Precipitation Density and Size Z Lu, G Samanta, TW Lu, FC Tsai US Patent App. 15/983,431, 2018 | 4 | 2018 |
| Crystal growing systems and methods including a transparent crucible RJ Phillips, S Basak, G Samanta US Patent 10,066,314, 2018 | 4 | 2018 |
| Data reduction in viscoelastic turbulent channel flows based on extended Karhunen–Loeve analysis G Samanta, KD Housiadas, AN Beris, R Handler Journal of non-newtonian fluid mechanics 165 (19-20), 1386-1399, 2010 | 4 | 2010 |
| Method for transfer of a thin layer of silicon G Samanta, S Zepeda US Patent 10,818,540, 2020 | 2 | 2020 |
| Seed chuck assemblies and crystal pulling systems for reducing deposit build-up during crystal growth process P Daggolu, BM Meyer, WL Luter, S Basak, SS Bhagavat, N Zhang, ... US Patent 10,487,418, 2019 | 2 | 2019 |
| Crystal pulling systems and methods for producing monocrystalline ingots with reduced edge band defects S Basak, G Samanta, P Daggolu, BM Meyer, WL Luter, JW Ryu, EM Gitlin US Patent 11,313,049, 2022 | 1 | 2022 |
| Systems and methods for production of low oxygen content silicon G Samanta, P Daggolu, S Bhagavat, S Basak, N Zhang US Patent 11,136,691, 2021 | 1 | 2021 |
| Crystal pulling systems and methods for producing monocrystalline ingots with reduced edge band defects S Basak, G Samanta, P Daggolu, BM Meyer, WL Luter, JW Ryu, EM Gitlin US Patent 11,072,870, 2021 | 1 | 2021 |
| Methods for producing low oxygen silicon ingots S Basak, CM Hudson, G Samanta, JW Ryu, H Sreedharamurthy, ... US Patent 10,513,796, 2019 | 1 | 2019 |
| Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size Z Lu, G Samanta, TW Lu, FC Tsai US Patent App. 18/334,736, 2023 | | 2023 |
| Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size Z Lu, G Samanta, TW Lu, FC Tsai US Patent 11,753,741, 2023 | | 2023 |
Soubir BasakTechnical Program Manager, Intel CorpDirección de correo verificada de wustl.edu
