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Fan Li
Fan Li
Research Fellow, School of Engineering, University of Warwick
Verified email at warwick.ac.uk - Homepage
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Cited by
Year
High-temperature (1200–1400° C) dry oxidation of 3C-SiC on silicon
YK Sharma, F Li, MR Jennings, CA Fisher, A Pérez-Tomás, S Thomas, ...
Journal of Electronic Materials 44, 4167-4174, 2015
202015
On the Ti3SiC2 Metallic Phase Formation for Robust p-Type 4H-SiC Ohmic Contacts
MR Jennings, CA Fisher, D Walker, A Sanchez, A Pérez-Tomás, ...
Materials Science Forum 778, 693-696, 2014
202014
Status and prospects of cubic silicon carbide power electronics device technology
F Li, F Roccaforte, G Greco, P Fiorenza, F La Via, A Pérez-Tomas, ...
Materials 14 (19), 5831, 2021
172021
The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment
AB Renz, VA Shah, OJ Vavasour, Y Bonyadi, F Li, T Dai, GWC Baker, ...
Journal of Applied Physics 127 (2), 2020
162020
3C-SiC transistor with ohmic contacts defined at room temperature
F Li, Y Sharma, D Walker, S Hindmarsh, M Jennings, D Martin, C Fisher, ...
IEEE Electron Device Letters 37 (9), 1189-1192, 2016
162016
Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications
KB Ali, PM Gammon, CW Chan, F Li, V Pathirana, T Trajkovic, F Gity, ...
2017 47th European Solid-State Device Research Conference (ESSDERC), 236-239, 2017
142017
Comparative study of RESURF Si/SiC LDMOSFETs for high-temperature applications using TCAD modeling
CW Chan, F Li, A Sanchez, PA Mawby, PM Gammon
IEEE Transactions on Electron Devices 64 (9), 3713-3718, 2017
142017
Electrical activation of nitrogen heavily implanted 3C-SiC (1 0 0)
F Li, Y Sharma, V Shah, M Jennings, A Pérez-Tomás, M Myronov, ...
Applied Surface Science 353, 958-963, 2015
142015
High temperature nitridation of 4H-SiC MOSFETs
H Rong, YK Sharma, TX Dai, F Li, MR Jennings, S Russell, DM Martin, ...
Materials Science Forum 858, 623-626, 2016
132016
The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal
AB Renz, OJ Vavasour, PM Gammon, F Li, T Dai, M Antoniou, GWC Baker, ...
Materials Science in Semiconductor Processing 122, 105527, 2021
122021
Development, characterisation and simulation of wafer bonded Si-on-SiC substrates
PM Gammon, CW Chan, F Li, F Gity, T Trajkovic, V Pathirana, D Flandre, ...
Materials Science in Semiconductor Processing 78, 69-74, 2018
122018
A first evaluation of thick oxide 3C-SiC MOS capacitors reliability
F Li, Q Song, A Perez-Tomas, V Shah, Y Sharma, D Hamilton, C Fisher, ...
IEEE Transactions on Electron Devices 67 (1), 237-242, 2019
92019
Cryogenic characterisation and modelling of commercial SiC MOSFETs
LJ Woodend, PM Gammon, VA Shah, A Pérez-Tomás, F Li, DP Hamilton, ...
Materials Science Forum 897, 557-560, 2017
82017
Study of breakdown characteristics of 4H-SiC Schottky diode with improved 2-step mesa junction termination extension
H Rong, Z Mohammadi, YK Sharma, F Li, MR Jennings, PA Mawby
2014 16th European Conference on Power Electronics and Applications, 1-10, 2014
82014
The effect of interfacial charge on the development of wafer bonded silicon-on-silicon-carbide power devices
PM Gammon, F Li, CW Chan, AM Sanchez, SA Hindmarsh, F Gity, ...
Materials Science Forum 897, 747-750, 2017
72017
Study of a novel lateral RESURF 3C-SiC on Si Schottky diode
F Li, Y Sharma, M Jennings, H Rong, C Fisher, P Mawby
2014 16th European Conference on Power Electronics and Applications, 1-10, 2014
72014
Optimization of 1700-V 4H-SiC superjunction Schottky rectifiers with implanted p-pillars for practical realization
GWC Baker, C Chan, AB Renz, Y Qi, T Dai, F Li, VA Shah, PA Mawby, ...
IEEE Transactions on Electron Devices 68 (7), 3497-3504, 2021
62021
Development of high-quality gate oxide on 4H-SiC using atomic layer deposition
AB Renz, OJ Vavasour, PM Gammon, F Li, TX Dai, S Esfahani, ...
Materials Science Forum 1004, 547-553, 2020
62020
Improved channel mobility by oxide nitridation for n-channel MOSFET on 3C-SiC (100)/Si
F Li, YK Sharma, MR Jennings, A Pérez-Tomás, VA Shah, H Rong, ...
Materials Science Forum 858, 667-670, 2016
62016
3C-SiC-on-Si MOSFETs: overcoming material technology limitations
A Arvanitopoulos, M Antoniou, F Li, MR Jennings, S Perkins, KN Gyftakis, ...
IEEE Transactions on Industry Applications 58 (1), 565-575, 2021
52021
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