Fan Li
Fan Li
Research Fellow, School of Engineering, University of Warwick
Verified email at - Homepage
Cited by
Cited by
On the Ti3SiC2 metallic phase formation for robust p-type 4H-SiC ohmic contacts
MR Jennings, CA Fisher, D Walker, A Sanchez, A Pérez-Tomás, ...
Materials Science Forum 778, 693-696, 2014
High-temperature (1200–1400° C) dry oxidation of 3C-SiC on silicon
YK Sharma, F Li, MR Jennings, CA Fisher, A Pérez-Tomás, S Thomas, ...
Journal of Electronic Materials 44 (11), 4167-4174, 2015
3C-SiC transistor with ohmic contacts defined at room temperature
F Li, Y Sharma, D Walker, S Hindmarsh, M Jennings, D Martin, C Fisher, ...
IEEE Electron Device Letters 37 (9), 1189-1192, 2016
Comparative study of RESURF Si/SiC LDMOSFETs for high-temperature applications using TCAD modeling
CW Chan, F Li, A Sanchez, PA Mawby, PM Gammon
IEEE Transactions on Electron Devices 64 (9), 3713-3718, 2017
High temperature nitridation of 4H-SiC MOSFETs
H Rong, YK Sharma, T Dai, F Li, MR Jennings, SAO Russell, DM Martin, ...
Materials Science Forum 858, 623-626, 2016
Electrical activation of nitrogen heavily implanted 3C-SiC (1 0 0)
F Li, Y Sharma, V Shah, M Jennings, A Pérez-Tomás, M Myronov, ...
Applied Surface Science 353, 958-963, 2015
Study of breakdown characteristics of 4H-SiC Schottky diode with improved 2-step mesa junction termination extension
H Rong, Z Mohammadi, YK Sharma, F Li, MR Jennings, PA Mawby
2014 16th European Conference on Power Electronics and Applications, 1-10, 2014
The effect of interfacial charge on the development of wafer bonded silicon-on-silicon-carbide power devices
PM Gammon, F Li, CW Chan, AM Sanchez, SA Hindmarsh, F Gity, ...
Materials Science Forum 897, 747-750, 2017
Study of a novel lateral RESURF 3C-SiC on Si Schottky diode
F Li, Y Sharma, M Jennings, H Rong, C Fisher, P Mawby
2014 16th European Conference on Power Electronics and Applications, 1-10, 2014
Development, characterisation and simulation of wafer bonded Si-on-SiC substrates
PM Gammon, CW Chan, F Li, F Gity, T Trajkovic, V Pathirana, D Flandre, ...
Materials Science in Semiconductor Processing 78, 69-74, 2018
Improved channel mobility by oxide nitridation for n-channel MOSFET on 3C-SiC (100)/Si
F Li, YK Sharma, MR Jennings, A Pérez-Tomás, VA Shah, H Rong, ...
Materials Science Forum 858, 667-670, 2016
The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment
AB Renz, VA Shah, OJ Vavasour, Y Bonyadi, F Li, T Dai, GWC Baker, ...
Journal of Applied Physics 127 (2), 025704, 2020
A first evaluation of thick oxide 3C-SiC MOS capacitors reliability
F Li, Q Song, A Perez-Tomas, V Shah, Y Sharma, D Hamilton, C Fisher, ...
IEEE Transactions on Electron Devices 67 (1), 237-242, 2019
Physical characterisation of 3C-SiC (001)/SiO2 interface using XPS
F Li, O Vavasour, M Walker, DM Martin, YK Sharma, SAO Russell, ...
Materials Science Forum 897, 151-154, 2017
Cryogenic characterisation and modelling of commercial SiC MOSFETs
LJ Woodend, PM Gammon, VA Shah, A Pérez-Tomás, F Li, DP Hamilton, ...
Materials Science Forum 897, 557-560, 2017
Fabrication of 3C-SiC MOS capacitors using high-temperature oxidation
YK Sharma, F Li, CA Fisher, MR Jennings, D Hamilton, SM Thomas, ...
Materials Science Forum 821, 464-467, 2015
4H-SiC diode avalanche breakdown voltage estimation by simulation and junction termination extension analysis
H Rong, YK Sharma, F Li, MR Jennings, PA Mawby
Materials Science Forum 778, 824-827, 2014
Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications
KB Ali, PM Gammon, CW Chan, F Li, V Pathirana, T Trajkovic, F Gity, ...
2017 47th European Solid-State Device Research Conference (ESSDERC), 236-239, 2017
Demonstrating the instability of SiC ohmic contacts and drain terminal metallization schemes aged at 300° C
DP Hamilton, SA Hindmarsh, F Li, MR Jennings, SAO Russell, ...
Materials Science Forum 897, 387-390, 2017
A novel 3C-SiC on Si power Schottky diode design and modelling
F Li, YK Sharma, CA Fisher, MR Jennings, PA Mawby
MRS Online Proceedings Library 1693 (1), 93-98, 2014
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