| On the Ti3SiC2 metallic phase formation for robust p-type 4H-SiC ohmic contacts MR Jennings, CA Fisher, D Walker, A Sanchez, A Pérez-Tomás, ... Materials Science Forum 778, 693-696, 2014 | 19 | 2014 |
| High-temperature (1200–1400° C) dry oxidation of 3C-SiC on silicon YK Sharma, F Li, MR Jennings, CA Fisher, A Pérez-Tomás, S Thomas, ... Journal of Electronic Materials 44 (11), 4167-4174, 2015 | 12 | 2015 |
| 3C-SiC transistor with ohmic contacts defined at room temperature F Li, Y Sharma, D Walker, S Hindmarsh, M Jennings, D Martin, C Fisher, ... IEEE Electron Device Letters 37 (9), 1189-1192, 2016 | 10 | 2016 |
| Comparative study of RESURF Si/SiC LDMOSFETs for high-temperature applications using TCAD modeling CW Chan, F Li, A Sanchez, PA Mawby, PM Gammon IEEE Transactions on Electron Devices 64 (9), 3713-3718, 2017 | 9 | 2017 |
| High temperature nitridation of 4H-SiC MOSFETs H Rong, YK Sharma, T Dai, F Li, MR Jennings, SAO Russell, DM Martin, ... Materials Science Forum 858, 623-626, 2016 | 8 | 2016 |
| Electrical activation of nitrogen heavily implanted 3C-SiC (1 0 0) F Li, Y Sharma, V Shah, M Jennings, A Pérez-Tomás, M Myronov, ... Applied Surface Science 353, 958-963, 2015 | 8 | 2015 |
| Study of breakdown characteristics of 4H-SiC Schottky diode with improved 2-step mesa junction termination extension H Rong, Z Mohammadi, YK Sharma, F Li, MR Jennings, PA Mawby 2014 16th European Conference on Power Electronics and Applications, 1-10, 2014 | 6 | 2014 |
| The effect of interfacial charge on the development of wafer bonded silicon-on-silicon-carbide power devices PM Gammon, F Li, CW Chan, AM Sanchez, SA Hindmarsh, F Gity, ... Materials Science Forum 897, 747-750, 2017 | 5 | 2017 |
| Study of a novel lateral RESURF 3C-SiC on Si Schottky diode F Li, Y Sharma, M Jennings, H Rong, C Fisher, P Mawby 2014 16th European Conference on Power Electronics and Applications, 1-10, 2014 | 5 | 2014 |
| Development, characterisation and simulation of wafer bonded Si-on-SiC substrates PM Gammon, CW Chan, F Li, F Gity, T Trajkovic, V Pathirana, D Flandre, ... Materials Science in Semiconductor Processing 78, 69-74, 2018 | 4 | 2018 |
| Improved channel mobility by oxide nitridation for n-channel MOSFET on 3C-SiC (100)/Si F Li, YK Sharma, MR Jennings, A Pérez-Tomás, VA Shah, H Rong, ... Materials Science Forum 858, 667-670, 2016 | 4 | 2016 |
| The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment AB Renz, VA Shah, OJ Vavasour, Y Bonyadi, F Li, T Dai, GWC Baker, ... Journal of Applied Physics 127 (2), 025704, 2020 | 3 | 2020 |
| A first evaluation of thick oxide 3C-SiC MOS capacitors reliability F Li, Q Song, A Perez-Tomas, V Shah, Y Sharma, D Hamilton, C Fisher, ... IEEE Transactions on Electron Devices 67 (1), 237-242, 2019 | 3 | 2019 |
| Physical characterisation of 3C-SiC (001)/SiO2 interface using XPS F Li, O Vavasour, M Walker, DM Martin, YK Sharma, SAO Russell, ... Materials Science Forum 897, 151-154, 2017 | 3 | 2017 |
| Cryogenic characterisation and modelling of commercial SiC MOSFETs LJ Woodend, PM Gammon, VA Shah, A Pérez-Tomás, F Li, DP Hamilton, ... Materials Science Forum 897, 557-560, 2017 | 3 | 2017 |
| Fabrication of 3C-SiC MOS capacitors using high-temperature oxidation YK Sharma, F Li, CA Fisher, MR Jennings, D Hamilton, SM Thomas, ... Materials Science Forum 821, 464-467, 2015 | 3 | 2015 |
| 4H-SiC diode avalanche breakdown voltage estimation by simulation and junction termination extension analysis H Rong, YK Sharma, F Li, MR Jennings, PA Mawby Materials Science Forum 778, 824-827, 2014 | 3 | 2014 |
| Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications KB Ali, PM Gammon, CW Chan, F Li, V Pathirana, T Trajkovic, F Gity, ... 2017 47th European Solid-State Device Research Conference (ESSDERC), 236-239, 2017 | 2 | 2017 |
| Demonstrating the instability of SiC ohmic contacts and drain terminal metallization schemes aged at 300° C DP Hamilton, SA Hindmarsh, F Li, MR Jennings, SAO Russell, ... Materials Science Forum 897, 387-390, 2017 | 2 | 2017 |
| A novel 3C-SiC on Si power Schottky diode design and modelling F Li, YK Sharma, CA Fisher, MR Jennings, PA Mawby MRS Online Proceedings Library 1693 (1), 93-98, 2014 | 2 | 2014 |
