Jose Penuelas
Jose Penuelas
Associate Professor - Institut des Nanotechnologies de Lyon
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Epitaxial graphene on cubic SiC (111)/Si (111) substrate
A Ouerghi, A Kahouli, D Lucot, M Portail, L Travers, J Gierak, J Penuelas, ...
Applied physics letters 96 (19), 191910, 2010
Surface morphology and characterization of thin graphene films on SiC vicinal substrate
J Penuelas, A Ouerghi, D Lucot, C David, J Gierak, H Estrade-Szwarckopf, ...
Physical Review B 79 (3), 033408, 2009
1000 fps computational ghost imaging using LED-based structured illumination
ZH Xu, W Chen, J Penuelas, M Padgett, MJ Sun
Optics express 26 (3), 2427-2434, 2018
Controlling structure and morphology of CoPt nanoparticles through dynamical or static coalescence effects
J Penuelas, P Andreazza, C Andreazza-Vignolle, HCN Tolentino, ...
Physical review letters 100 (11), 115502, 2008
Temperature effect on the ordering and morphology of CoPt nanoparticles
J Penuelas, C Andreazza-Vignolle, P Andreazza, A Ouerghi, N Bouet
Surface Science 602 (2), 545-551, 2008
Probing nanoscale structural and order/disorder phase transitions of supported Co-Pt clusters under annealing
P Andreazza, C Mottet, C Andreazza-Vignolle, J Penuelas, ...
Physical Review B 82 (15), 155453, 2010
X-ray photoelectron spectroscopy (XPS) and diffraction (XPD) study of a few layers of graphene on 6H-SiC (0001)
D Ferrah, J Penuelas, C Bottela, G Grenet, A Ouerghi
Surface science 615, 47-56, 2013
Epitaxy of SrTiO3 on Silicon: The Knitting Machine Strategy
G Saint-Girons, R Bachelet, R Moalla, B Meunier, L Louahadj, B Canut, ...
Chemistry of Materials 28 (15), 5347-5355, 2016
Evidence for the formation of two phases during the growth of SrTi on silicon
G Niu, J Penuelas, L Largeau, B Vilquin, JL Maurice, C Botella, ...
Physical Review B 83 (5), 054105, 2011
The role of nickel and titanium in the formation of ohmic contacts on p-type 4H–SiC
F Laariedh, M Lazar, P Cremillieu, J Penuelas, JL Leclercq, D Planson
Semiconductor science and technology 28 (4), 045007, 2013
Heteroepitaxy of thin films on Si (001) using different growth strategies: Toward substratelike quality
G Niu, B Vilquin, J Penuelas, C Botella, G Hollinger, G Saint-Girons
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2011
Real-time icosahedral to fcc structure transition during CoPt nanoparticles formation
J Penuelas, P Andreazza, C Andreazza-Vignolle, C Mottet, M De Santis, ...
The European Physical Journal Special Topics 167 (1), 19-25, 2009
Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealing
T Abi-Tannous, M Soueidan, G Ferro, M Lazar, B Toury, MF Beaufort, ...
Applied Surface Science 347, 186-192, 2015
XMCD studies of Co and Co–Pt nanoparticles prepared by vapour deposition
P Imperia, P Andreazza, D Schmitz, J Penuelas, C Andreazza-Vignolle
Journal of magnetism and magnetic materials 310 (2), 2417-2419, 2007
LaAlO3/Si capacitors: Comparison of different molecular beam deposition conditions and their impact on electrical properties
S Pelloquin, G Saint-Girons, N Baboux, D Albertini, W Hourani, ...
Journal of Applied Physics 113 (3), 034106, 2013
Exploring piezoelectric properties of III–V nanowires using piezo-response force microscopy
Y Calahorra, X Guan, NN Halder, M Smith, S Cohen, D Ritter, J Penuelas, ...
Semiconductor Science and Technology 32 (7), 074006, 2017
GaAs Core/SrTiO3 Shell Nanowires Grown by Molecular Beam Epitaxy
X Guan, J Becdelievre, B Meunier, A Benali, G Saint-Girons, R Bachelet, ...
Nano letters 16 (4), 2393-2399, 2016
Direct growth of InAsP/InP quantum well heterostructures on Si using crystalline templates
B Gobaut, J Penuelas, J Cheng, A Chettaoui, L Largeau, G Hollinger, ...
Applied Physics Letters 97 (20), 201908, 2010
Partial arsenic pressure and crystal orientation during the molecular beam epitaxy of GaAs on
J Cheng, A Chettaoui, J Penuelas, B Gobaut, P Regreny, A Benamrouche, ...
Journal of Applied Physics 107 (9), 094902, 2010
Polarization properties of single and ensembles of InAs/InP quantum rod nanowires emitting in the telecom wavelengths
R Anufriev, N Chauvin, H Khmissi, K Naji, JB Barakat, J Penuelas, ...
Journal of Applied Physics 113 (19), 193101, 2013
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Artículos 1–20