Gwénolé Jacopin
Gwénolé Jacopin
Institut Néel - CNRS, Univ. Grenoble Alpes, France
Dirección de correo verificada de - Página principal
Citado por
Citado por
Triazatruxene-based hole transporting materials for highly efficient perovskite solar cells
K Rakstys, A Abate, MI Dar, P Gao, V Jankauskas, G Jacopin, ...
Journal of the American Chemical Society 137 (51), 16172-16178, 2015
Origin of unusual bandgap shift and dual emission in organic-inorganic lead halide perovskites
MI Dar, G Jacopin, S Meloni, A Mattoni, N Arora, A Boziki, ...
Science advances 2 (10), e1601156, 2016
M-plane core–shell InGaN/GaN multiple-quantum-wells on GaN wires for electroluminescent devices
R Koester, JS Hwang, D Salomon, X Chen, C Bougerol, JP Barnes, ...
Nano letters 11 (11), 4839-4845, 2011
Nanometer scale spectral imaging of quantum emitters in nanowires and its correlation to their atomically resolved structure
LF Zagonel, S Mazzucco, M Tencé, K March, R Bernard, B Laslier, ...
Nano letters 11 (2), 568-573, 2011
InGaN/GaN core–shell single nanowire light emitting diodes with graphene-based p-contact
M Tchernycheva, P Lavenus, H Zhang, AV Babichev, G Jacopin, ...
Nano letters 14 (5), 2456-2465, 2014
Integrated photonic platform based on InGaN/GaN nanowire emitters and detectors
M Tchernycheva, A Messanvi, A de Luna Bugallo, G Jacopin, P Lavenus, ...
Nano letters 14 (6), 3515-3520, 2014
Ultraviolet Photodetector Based on GaN/AlN Quantum Discs in a Single Nanowire.
L Rigutti, M Tchernycheva, A De Luna Bugallo, G Jacopin, FH Julien, ...
Nano Letters 10 (10), 2010
A novel dopant‐free triphenylamine based molecular “butterfly” hole‐transport material for highly efficient and stable perovskite solar cells
F Zhang, C Yi, P Wei, X Bi, J Luo, G Jacopin, S Wang, X Li, Y Xiao, ...
Advanced Energy Materials 6 (14), 1600401, 2016
Characterization and modeling of a ZnO nanowire ultraviolet photodetector with graphene transparent contact
H Zhang, AV Babichev, G Jacopin, P Lavenus, FH Julien, A Yu Egorov, ...
Journal of Applied Physics 114 (23), 2013
Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency
C Haller, JF Carlin, G Jacopin, D Martin, R Butté, N Grandjean
Applied Physics Letters 111 (26), 2017
Intrinsic and extrinsic stability of formamidinium lead bromide perovskite solar cells yielding high photovoltage
N Arora, MI Dar, M Abdi-Jalebi, F Giordano, N Pellet, G Jacopin, ...
Nano letters 16 (11), 7155-7162, 2016
High open-circuit voltage: Fabrication of formamidinium lead bromide perovskite solar cells using fluorene–dithiophene derivatives as hole-transporting materials
N Arora, S Orlandi, MI Dar, S Aghazada, G Jacopin, M Cavazzini, ...
ACS Energy Letters 1 (1), 107-112, 2016
GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells
C Haller, JF Carlin, G Jacopin, W Liu, D Martin, R Butté, N Grandjean
Applied Physics Letters 113 (11), 2018
Visible-blind photodetector based on p–i–n junction GaN nanowire ensembles
A de Luna Bugallo, M Tchernycheva, G Jacopin, L Rigutti, FH Julien, ...
Nanotechnology 21 (31), 315201, 2010
Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires
G Jacopin, L Rigutti, L Largeau, F Fortuna, F Furtmayr, FH Julien, ...
Journal of Applied Physics 110 (6), 2011
Core–shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping
M Tchernycheva, V Neplokh, H Zhang, P Lavenus, L Rigutti, F Bayle, ...
Nanoscale 7 (27), 11692-11701, 2015
Single-wire photodetectors based on InGaN/GaN radial quantum wells in GaN wires grown by catalyst-free metal-organic vapor phase epitaxy
A Bugallo, L Rigutti, G Jacopin, FH Julien, C Durand, XJ Chen, ...
Applied Physics Letters 98 (23), 2011
Correlation of optical and structural properties of GaN/AlN core-shell nanowires
L Rigutti, G Jacopin, L Largeau, E Galopin, ADL Bugallo, FH Julien, ...
Physical Review B 83 (15), 155320, 2011
Photovoltaic and amplified spontaneous emission studies of high‐quality formamidinium lead bromide perovskite films
N Arora, MI Dar, M Hezam, W Tress, G Jacopin, T Moehl, P Gao, ...
Advanced Functional Materials 26 (17), 2846-2854, 2016
Single-wire light-emitting diodes based on GaN wires containing both polar and nonpolar InGaN/GaN quantum wells
G Jacopin, ADL Bugallo, P Lavenus, L Rigutti, FH Julien, LF Zagonel, ...
Applied Physics Express 5 (1), 014101, 2011
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–20