Arsalan Pourkabirian
Arsalan Pourkabirian
Low Noise Factory
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Observation of the dynamical Casimir effect in a superconducting circuit
CM Wilson, G Johansson, A Pourkabirian, M Simoen, JR Johansson, ...
Nature 479 (7373), 376-379, 2011
8922011
Probing the quantum vacuum with an artificial atom in front of a mirror
IC Hoi, AF Kockum, L Tornberg, A Pourkabirian, G Johansson, P Delsing, ...
Nature Physics 11, 1045–1049, 2015
962015
Two-finger InP HEMT design for stable cryogenic operation of ultra-low-noise Ka-and Q-band LNAs
E Cha, G Moschetti, N Wadefalk, PÅ Nilsson, S Bevilacqua, ...
IEEE Transactions on Microwave Theory and Techniques 65 (12), 5171-5180, 2017
192017
Nonequilibrium probing of two-level charge fluctuators using the step response of a single-electron transistor
A Pourkabirian, MV Gustafsson, G Johansson, J Clarke, P Delsing
Physical review letters 113 (25), 256801, 2014
192014
Thermal properties of charge noise sources
MV Gustafsson, A Pourkabirian, G Johansson, J Clarke, P Delsing
Physical Review B 88 (24), 245410, 2013
18*2013
0.3–14 and 16–28 GHz wide-bandwidth cryogenic MMIC low-noise amplifiers
E Cha, N Wadefalk, PÅ Nilsson, J Schleeh, G Moschetti, A Pourkabirian, ...
IEEE Transactions on Microwave Theory and Techniques 66 (11), 4860-4869, 2018
102018
Cryogenic W-band LNA for ALMA band 2+ 3 with average noise temperature of 24 K
Y Tang, N Wadefalk, JW Kooi, J Schleeh, G Moschetti, PÅ Nilsson, ...
2017 IEEE MTT-S International Microwave Symposium (IMS), 176-179, 2017
72017
Cryogenic LNAs for SKA band 2 to 5
J Schleeh, G Moschetti, N Wadefalk, E Cha, A Pourkabirian, G Alestig, ...
2017 IEEE MTT-S International Microwave Symposium (IMS), 164-167, 2017
62017
InP HEMTs for Sub-mW Cryogenic Low-Noise Amplifiers
E Cha, N Wadefalk, G Moschetti, A Pourkabirian, J Stenarson, J Grahn
IEEE Electron Device Letters 41 (7), 1005-1008, 2020
42020
Cryogenic low noise amplifiers in an InP HEMT MMIC process
PÅ Nilsson, A Pourkabirian, J Schleeh, N Wadefalk, JP Starski, G Alestig, ...
2015 Asia-Pacific Microwave Conference (APMC) 1, 1-3, 2015
42015
On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field
IH Rodrigues, D Niepce, A Pourkabirian, G Moschetti, J Schleeh, T Bauch, ...
AIP Advances 9 (8), 085004, 2019
32019
Cryogenic low-noise InP HEMTs: A source-drain distance study
E Cha, A Pourkabirian, J Schleeh, N Wadefalk, G Moschetti, JP Starski, ...
2016 Compound Semiconductor Week (CSW)[Includes 28th International …, 2016
32016
Probing quantum and classical noise in nano circuits
A Pourkabirian
PQDT-Global, 2014
12014
III-V HEMTs for Cryogenic Low Noise Amplifiers
J Grahn, E Cha, A Pourkabirian, J Stenarson, N Wadefalk
2020 IEEE International Electron Devices Meeting (IEDM), 25.6. 1-25.6. 4, 2020
2020
A 300-µW Cryogenic HEMT LNA for Quantum Computing
E Cha, N Wadefalk, G Moschetti, A Pourkabirian, J Stenarson, J Grahn
2020 IEEE/MTT-S International Microwave Symposium (IMS), 1299-1302, 2020
2020
Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers under a magnetic field
IH Rodrigues, D Niepce, G Moschetti, A Pourkabirian, J Schleeh, T Bauch, ...
2019 Compound Semiconductor Week (CSW), 1-1, 2019
2019
Tunable coupling in atom-mirror system
IC Hoi, L Tornberg, AF Kockum, A Pourkabirian, G Johansson, CM Wilson, ...
APS March Meeting Abstracts 2014, A34. 008, 2014
2014
Comparing Charge Offset and Charge Noise for a Single Electron Transistor
A Pourkabiriana, M Gustafssona, T Baucha, J Lublina, G Johanssona, ...
The 26th International Conference on Low Temperature Physics (第 26 届国际低 …, 2011
2011
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Artículos 1–18