| Electronic surface and dielectric interface states on GaN and AlGaN BS Eller, J Yang, RJ Nemanich Journal of Vacuum Science & Technology A 31 (5), 2013 | 240 | 2013 |
| Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride J Yang, BS Eller, C Zhu, C England, RJ Nemanich Journal of Applied Physics 112 (5), 2012 | 85 | 2012 |
| Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga-and N-face gallium nitride J Yang, BS Eller, RJ Nemanich Journal of Applied Physics 116 (12), 123702, 2014 | 83 | 2014 |
| Fixed-gap tunnel junction for reading DNA nucleotides P Pang, BA Ashcroft, W Song, P Zhang, S Biswas, Q Qing, J Yang, ... ACS nano 8 (12), 11994-12003, 2014 | 67 | 2014 |
| Polarization effects of GaN and AlGaN: Polarization bound charge, band bending, and electronic surface states BS Eller, J Yang, RJ Nemanich Journal of electronic materials 43, 4560-4568, 2014 | 66 | 2014 |
| Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide J Yang, BS Eller, M Kaur, RJ Nemanich Journal of Vacuum Science & Technology A 32 (2), 2014 | 32 | 2014 |
| Band alignment of a HfO2-VO2-HfO2 confined well structure on silicon C Zhu, SL Caudle, J Yang, DJ Smith, RJ Nemanich Journal of Vacuum Science & Technology B 32 (1), 2014 | 8 | 2014 |
| Interface Electronic State Characterization of Plasma Enhanced Atomic Layer Deposited Dielectrics on GaN J Yang Arizona State University, 2014 | 1 | 2014 |
| Band Alignment of Plasma-Enhanced ALD High-k Dielectrics on Gallium Nitride J Yang, B Eller, C Zhu, R Nemanich APS March Meeting Abstracts 2012, W32. 006, 2012 | | 2012 |
| Electronic States of Hafnium and Vanadium oxide in Silicon Gate Stack Structure C Zhu, F Tang, X Liu, J Yang, R Nemanich APS March Meeting Abstracts 2010, L24. 009, 2010 | | 2010 |
Robert J. NemanichDepartment of Physics, Arizona State UniversityVerified email at asu.edu
