Fabio Isa, PhD
Fabio Isa, PhD
CSIRO - Manufacturing Unit
Verified email at csiro.au - Homepage
Cited by
Cited by
Scaling hetero-epitaxy from layers to three-dimensional crystals
CV Falub, H Von Känel, F Isa, R Bergamaschini, A Marzegalli, ...
Science 335 (6074), 1330-1334, 2012
Direct-gap gain and optical absorption in germanium correlated to the density of photoexcited carriers, doping, and strain
L Carroll, P Friedli, S Neuenschwander, H Sigg, S Cecchi, F Isa, ...
Physical review letters 109 (5), 057402, 2012
Unexpected Dominance of Vertical Dislocations in High‐Misfit Ge/Si (001) Films and Their Elimination by Deep Substrate Patterning
A Marzegalli, F Isa, H Groiss, E Müller, CV Falub, AG Taboada, ...
Advanced Materials 25 (32), 4408-4412, 2013
Perfect crystals grown from imperfect interfaces
CV Falub, M Meduňa, D Chrastina, F Isa, A Marzegalli, T Kreiliger, ...
Scientific reports 3 (1), 1-6, 2013
Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays
R Bergamaschini, F Isa, CV Falub, P Niedermann, E Müller, G Isella, ...
Surface science reports 68 (3-4), 390-417, 2013
Ge crystals on Si show their light
F Pezzoli, F Isa, G Isella, CV Falub, T Kreiliger, M Salvalaglio, ...
Physical Review Applied 1 (4), 044005, 2014
Highly Mismatched, Dislocation‐Free SiGe/Si Heterostructures
F Isa, M Salvalaglio, YAR Dasilva, M Meduňa, M Barget, A Jung, ...
Advanced Materials 28, 884-888, 2016
Engineered coalescence by annealing 3D Ge microstructures into high-quality suspended layers on Si
M Salvalaglio, R Bergamaschini, F Isa, A Scaccabarozzi, G Isella, ...
ACS applied materials & interfaces 7 (34), 19219-19225, 2015
GaAs/Ge crystals grown on Si substrates patterned down to the micron scale
A Gonzalez Taboada, M Meduňa, M Salvalaglio, F Isa, T Kreiliger, ...
Journal of Applied Physics 119, 055301, 2016
Strain relaxation of GaAs/Ge crystals on patterned Si substrates
AG Taboada, T Kreiliger, CV Falub, F Isa, M Salvalaglio, L Wewior, ...
Applied Physics Letters 104 (2), 022112, 2014
3D heteroepitaxy of mismatched semiconductors on silicon
CV Falub, T Kreiliger, F Isa, AG Taboada, M Meduňa, F Pezzoli, ...
Thin Solid Films 557, 42-49, 2014
Onset of vertical threading dislocations in Si1−xGex/Si (001) at a critical Ge concentration
F Isa, A Marzegalli, AG Taboada, CV Falub, G Isella, F Montalenti, ...
APL Materials 1 (5), 052109, 2013
Investigation of interface abruptness and In content in (In, Ga) N/GaN superlattices
C Cheze, M Siekacz, F Isa, B Jenichen, F Feix, J Buller, T Schulz, ...
Journal of Applied Physics 120 (12), 125307, 2016
Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001)
A Marzegalli, A Cortinovis, FB Basset, E Bonera, F Pezzoli, ...
Materials & Design 116, 144-151, 2017
Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates
F Pezzoli, A Giorgioni, K Gallacher, F Isa, P Biagioni, RW Millar, E Gatti, ...
Applied Physics Letters 108, 262103, 2016
Ge/SiGe quantum wells on Si (111): Growth, structural, and optical properties
E Gatti, F Isa, D Chrastina, E Müller Gubler, F Pezzoli, E Grilli, G Isella
Journal of Applied Physics 116 (4), 043518, 2014
Dislocation-Free SiGe/Si Heterostructures
F Montalenti, F Rovaris, R Bergamaschini, L Miglio, M Salvalaglio, ...
Crystals 8, 257, 2018
Three-dimensional epitaxial Si1-xGex, Ge and SiC crystals on deeply patterned Si substrates
H Von Känel, F Isa, CV Falub, EJ Barthazy, EM Gubler, D Chrastina, ...
ECS Transactions 64 (6), 631, 2014
Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates
R Bergamaschini, M Salvalaglio, A Scaccabarozzi, F Isa, CV Falub, ...
Journal of Crystal Growth 440, 86-95, 2016
Integration of GaN crystals on micropatterned Si (0 0 1) substrates by plasma-assisted molecular beam epitaxy
F Isa, C Chèze, M Siekacz, C Hauswald, J Lähnemann, ...
Crystal Growth & Design 15 (10), 4886-4892, 2015
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