Dr. Md. Tanvir Hasan

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Akio YamamotoUniversity of FukuiDirección de correo verificada de u-fukui.ac.jp
Md. Rafiqul Islam (PhD) SMIEEEDepartment of Electrical and Electronic Engineering, Khulna University of Engineering &TechnologyDirección de correo verificada de eee.kuet.ac.bd
Ashraful Ghani BhuiyanProfessor of Electrical and Electronic Engineering, Khulna University of Engineering & TechnologyDirección de correo verificada de eee.kuet.ac.bd
Dr. Ibrahim Mustafa MehediIEEE Senior Member | World's Top 2% Scientist | Professor @ King AbdulAziz UniversityDirección de correo verificada de kau.edu.sa
Muhammad Shaffatul IslamRochester Institute of TechnologyDirección de correo verificada de g.rit.edu
Naoteru Shigekawaosaka meteropolitan universityDirección de correo verificada de omu.ac.jp
Biplob HossainAsst.Prof. JUST, BD | PhD Scholar & C. Teach. Staff,UOW, Australia | World's Top 2% ScientistDirección de correo verificada de just.edu.bd
Md. Sakib Hasan KhanAssistant Professor, EEE, KUETDirección de correo verificada de eee.kuet.ac.bd
Safayet AhmedPostdoctoral Scholar, Physics Dept. Oregon State UniversityDirección de correo verificada de connect.polyu.hk
Md Mottaleb Hossain, PhDTechnology Development Engineer at Intel Corporation, NM, USADirección de correo verificada de unm.edu
Dr. Md. Jahirul IslamKhulna University of Engineering & Technology, BangladeshDirección de correo verificada de eee.kuet.ac.bd
Adnan RiazInstitute of Nanotechnology,Karlsruhe institute of technology.Dirección de correo verificada de partner.kit.edu
Dr Md Azim UllahAcademic Staff (Teaching and Research), Swinburne University of TechnologyDirección de correo verificada de swin.edu.au
Takashi AsanoKyoto UniversityDirección de correo verificada de kuee.kyoto-u.ac.jp
Shahidul M. IslamAssociate Professor, Delaware State UniversityDirección de correo verificada de desu.edu

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Dr. Md. Tanvir Hasan

Jashore University of Science and Technology, Bangladesh

Dirección de correo verificada de just.edu.bd

Semiconductor Devices


Título Ordenar por citas Ordenar por año Ordenar por título	Citado por Citado por	Año
High performance dual core D-shape PCF-SPR sensor modeling employing gold coat MN Sakib, MB Hossain, KF Al-tabatabaie, IM Mehedi, MT Hasan, ... Results in Physics 15, 102788, 2019	124	2019
Current collapse suppression by gate field-plate in AlGaN/GaN HEMTs MT Hasan, T Asano, H Tokuda, M Kuzuhara IEEE Electron Device Letters 34 (11), 1379-1381, 2013	113	2013
Detection of small variations of ECG features using Wavelet AKMF Haque, MH Ali, MA Kiber, MT Hasan ARPN Journal of Engineering and applied Sciences 4 (6), 27-30, 2009	71	2009
Two dimensional electron gas in InN-based heterostructures: Effects of spontaneous and piezoelectric polarization MT Hasan, AG Bhuiyan, A Yamamoto Solid-State Electronics 52 (1), 134-139, 2008	33	2008
LED Illumination for High-Quality High-Yield Crop Growth in Protected Cropping Environments MM Rahman, DL Field, SM Ahmed, MT Hasan, MK Basher, K Alameh Plants 10 (11), 2470, 2021	24	2021
Numerical analysis and design of photonic crystal fiber based surface plasmon resonance biosensor MB Hossain, MS Hossain, M Moznuzzaman, MA Hossain, ... Journal of Sensor Technology 9 (2), 27-34, 2019	24	2019
Tunable Photocatalytic Properties of Planar GaN/GeC Hetero-Bilayer: Production of H₂ Fuel MSH Khan, MR Islam, MS Islam, IM Mehedi, MT Hasan IEEE Access 8, 209030-209042, 2020	19	2020
Strain-dependent electronic and optical properties of boron-phosphide and germanium-carbide hetero-bilayer: A first-principles study MS Hasan Khan, MR Islam, MT Hasan AIP Advances 10 (8), 085128, 2020	17	2020
Growth temperature dependent critical thickness for phase separation in thick (~ 1μm) In x Ga 1− x N (x= 0.2–0.4) A Yamamoto, TM Hasan, K Kodama, N Shigekawa, M Kuzuhara Journal of Crystal Growth 419, 64-68, 2015	17	2015
Phase separation of thick (∼ 1 µm) InxGa1− xN (x∼ 0.3) grown on AlN/Si (111): Simultaneous emergence of metallic In–Ga and GaN-rich InGaN A Yamamoto, MT Hasan, A Mihara, N Narita, N Shigekawa, M Kuzuhara Applied Physics Express 7 (3), 035502, 2014	17	2014
Impact of Channel Thickness on the Performance of GaAs and GaSb DG-JLMOSFETs: An Atomistic Tight Binding Based Evaluation MS Islam, MS Hasan, MR Islam, A Iskanderani, IM Mehedi, MT Hasan IEEE Access 9, 117649-117659, 2021	16	2021
Real-Time Non-Intrusive Electrical Load Classification Over IoT Using Machine Learning MT Ahammed, MM Hasan, MS Arefin, MR Islam, MA Rahman, E Hossain, ... IEEE Access 9, 115053-115067, 2021	15	2021
Surface barrier height lowering at above 540 K in AlInN/AlN/GaN heterostructures T Hasan, H Tokuda, M Kuzuhara Applied physics letters 99 (13), 2011	14	2011
Design and performance of inxga1-xn-based mj solar cells MR Islam, MT Hasan, AG Bhuiyan, MR Islam, A Yamamoto IETECH Journal of Electrical Analysis 2 (4), 237-243, 2008	14	2008
Proposal of High Performance 1.55 µm Quantum Dot Heterostructure Laser Using InN MM Hossain, M Abdullah-Al Humayun, MT Hasan, AG Bhuiyan, ... IEICE transactions on electronics 95 (2), 255-261, 2012	13	2012
Mechanism and Suppression of Current Collapse in AlGaN/GaN High Electron Mobility Transistors MT Hasan University of Fukui, 2013	11	2013
2DEG properties in InGaN/InN/InGaN‐based double channel HEMTs MT Hasan, MR Kaysir, MS Islam, AG Bhuiyan, MR Islam, A Hashimoto, ... physica status solidi c 7 (7‐8), 1997-2000, 2010	11	2010
Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study P Murugapandiyan, D Nirmal, MT Hasan, A Varghese, J Ajayan, ... Materials Science and Engineering: B 273, 115449, 2021	10	2021
Breakdown voltage enhancement of gate field plate Al_0.295Ga_0.705N/GaN HEMTs P Murugapandiyan, MT Hasan, V Rajya Lakshmi, M Wasim, J Ajayan, ... International Journal of Electronics 108 (8), 1273-1287, 2021	10	2021
GaN-based double-gate (DG) sub-10-nm MOSFETs: effects of gate work function IM Mehedi, AM Alshareef, MR Islam, MT Hasan Journal of Computational Electronics 17, 663-669, 2018	10	2018

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