| Growth, morphology, and structural properties of group‐III‐nitride nanocolumns and nanodisks E Calleja, J Ristić, S Fernández‐Garrido, L Cerutti, MA Sánchez‐García, ... physica status solidi (b) 244 (8), 2816-2837, 2007 | 191 | 2007 |
| A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si (111) S Fernández-Garrido, J Grandal, E Calleja, MA Sánchez-García, ... Journal of Applied Physics 106 (12), 126102, 2009 | 138 | 2009 |
| Coaxial multishell (In, Ga) As/GaAs nanowires for near-infrared emission on Si substrates E Dimakis, U Jahn, M Ramsteiner, A Tahraoui, J Grandal, X Kong, ... Nano letters 14 (5), 2604-2609, 2014 | 118 | 2014 |
| Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy S Fernández-Garrido, VM Kaganer, KK Sabelfeld, T Gotschke, J Grandal, ... Nano letters 13 (7), 3274-3280, 2013 | 107 | 2013 |
| Evidence of electron accumulation at nonpolar surfaces of InN nanocolumns E Calleja, J Grandal, MA Sánchez-García, M Niebelschütz, V Cimalla, ... Applied physics letters 90 (26), 262110, 2007 | 106 | 2007 |
| Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks A Bengoechea-Encabo, F Barbagini, S Fernandez-Garrido, J Grandal, ... Journal of crystal growth 325 (1), 89-92, 2011 | 98 | 2011 |
| Accommodation mechanism of InN nanocolumns grown on Si (111) substrates by molecular beam epitaxy J Grandal, MA Sánchez-García, E Calleja, E Luna, A Trampert Applied physics letters 91 (2), 021902, 2007 | 84 | 2007 |
| InN layers grown on silicon substrates: effect of substrate temperature and buffer layers J Grandal, MA Sánchez-García Journal of crystal growth 278 (1-4), 373-377, 2005 | 55 | 2005 |
| Phonon-plasmon coupling in electron surface accumulation layers in InN nanocolumns S Lazić, E Gallardo, JM Calleja, F Agulló-Rueda, J Grandal, ... Physical Review B 76 (20), 205319, 2007 | 51 | 2007 |
| Radiative defects in GaN nanocolumns: Correlation with growth conditions and sample morphology P Lefebvre, S Fernández-Garrido, J Grandal, J Ristić, MA Sánchez-García, ... Applied Physics Letters 98 (8), 083104, 2011 | 47 | 2011 |
| Epitaxial growth and characterization of InN nanorods and compact layers on silicon substrates MA Sánchez‐García, J Grandal, E Calleja, S Lazic, JM Calleja, ... physica status solidi (b) 243 (7), 1490-1493, 2006 | 41 | 2006 |
| Band bending at the surfaces of In-rich InGaN alloys LR Bailey, TD Veal, PDC King, CF McConville, J Pereiro, J Grandal, ... Journal of Applied Physics 104 (11), 113716, 2008 | 40 | 2008 |
| Morphology and optical properties of InN layers grown by molecular beam epitaxy on silicon substrates J Grandal, MA Sánchez‐García, F Calle, E Calleja physica status solidi (c) 2 (7), 2289-2292, 2005 | 29 | 2005 |
| Spectrum-optimized Si-based III-V multijunction photovoltaics TJ Grassman, AM Carlin, J Grandal, C Ratcliff, L Yang, MJ Mills, ... Physics, Simulation, and Photonic Engineering of Photovoltaic Devices 8256 …, 2012 | 24 | 2012 |
| Decoupling single nanowire mobilities limited by surface scattering and bulk impurity scattering DR Khanal, AX Levander, KM Yu, Z Liliental-Weber, W Walukiewicz, ... Journal of Applied Physics 110 (3), 033705, 2011 | 20 | 2011 |
| GaN and InN nanocolumns as electrochemical sensing elements: Potentiometric response to KCl, pH and urea N Sofikiti, N Chaniotakis, J Grandal, M Utrera, MA Sánchez-García, ... Materials Letters 64 (12), 1332-1335, 2010 | 20 | 2010 |
| Plan-view transmission electron microscopy investigation of GaAs/(In, Ga) As core-shell nanowires J Grandal, M Wu, X Kong, M Hanke, E Dimakis, L Geelhaar, H Riechert, ... Applied Physics Letters 105 (12), 121602, 2014 | 19 | 2014 |
| Optical properties of InN grown on Si (111) substrate E Sakalauskas, P Schley, J Räthel, TA Klar, R Müller, J Pezoldt, K Tonisch, ... physica status solidi (a) 207 (5), 1066-1069, 2010 | 19 | 2010 |
| InN/InGaN multiple quantum wells emitting at grown by molecular beam epitaxy J Grandal, J Pereiro, A Bengoechea-Encabo, S Fernandez-Garrido, ... Applied Physics Letters 98 (6), 061901, 2011 | 18 | 2011 |
| Determining surface Fermi level pinning position of InN nanowires using electrolyte gating DR Khanal, W Walukiewicz, J Grandal, E Calleja, J Wu Applied Physics Letters 95 (17), 173114, 2009 | 18 | 2009 |
Achim TrampertPaul-Drude-InstituteVerified email at pdi-berlin.de
