Javier Grandal
Javier Grandal
Assistant professor at UPM (ETSI de Telecomunicación)
Verified email at upm.es
Title
Cited by
Cited by
Year
Growth, morphology, and structural properties of group‐III‐nitride nanocolumns and nanodisks
E Calleja, J Ristić, S Fernández‐Garrido, L Cerutti, MA Sánchez‐García, ...
physica status solidi (b) 244 (8), 2816-2837, 2007
1912007
A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si (111)
S Fernández-Garrido, J Grandal, E Calleja, MA Sánchez-García, ...
Journal of Applied Physics 106 (12), 126102, 2009
1382009
Coaxial multishell (In, Ga) As/GaAs nanowires for near-infrared emission on Si substrates
E Dimakis, U Jahn, M Ramsteiner, A Tahraoui, J Grandal, X Kong, ...
Nano letters 14 (5), 2604-2609, 2014
1182014
Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy
S Fernández-Garrido, VM Kaganer, KK Sabelfeld, T Gotschke, J Grandal, ...
Nano letters 13 (7), 3274-3280, 2013
1072013
Evidence of electron accumulation at nonpolar surfaces of InN nanocolumns
E Calleja, J Grandal, MA Sánchez-García, M Niebelschütz, V Cimalla, ...
Applied physics letters 90 (26), 262110, 2007
1062007
Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks
A Bengoechea-Encabo, F Barbagini, S Fernandez-Garrido, J Grandal, ...
Journal of crystal growth 325 (1), 89-92, 2011
982011
Accommodation mechanism of InN nanocolumns grown on Si (111) substrates by molecular beam epitaxy
J Grandal, MA Sánchez-García, E Calleja, E Luna, A Trampert
Applied physics letters 91 (2), 021902, 2007
842007
InN layers grown on silicon substrates: effect of substrate temperature and buffer layers
J Grandal, MA Sánchez-García
Journal of crystal growth 278 (1-4), 373-377, 2005
552005
Phonon-plasmon coupling in electron surface accumulation layers in InN nanocolumns
S Lazić, E Gallardo, JM Calleja, F Agulló-Rueda, J Grandal, ...
Physical Review B 76 (20), 205319, 2007
512007
Radiative defects in GaN nanocolumns: Correlation with growth conditions and sample morphology
P Lefebvre, S Fernández-Garrido, J Grandal, J Ristić, MA Sánchez-García, ...
Applied Physics Letters 98 (8), 083104, 2011
472011
Epitaxial growth and characterization of InN nanorods and compact layers on silicon substrates
MA Sánchez‐García, J Grandal, E Calleja, S Lazic, JM Calleja, ...
physica status solidi (b) 243 (7), 1490-1493, 2006
412006
Band bending at the surfaces of In-rich InGaN alloys
LR Bailey, TD Veal, PDC King, CF McConville, J Pereiro, J Grandal, ...
Journal of Applied Physics 104 (11), 113716, 2008
402008
Morphology and optical properties of InN layers grown by molecular beam epitaxy on silicon substrates
J Grandal, MA Sánchez‐García, F Calle, E Calleja
physica status solidi (c) 2 (7), 2289-2292, 2005
292005
Spectrum-optimized Si-based III-V multijunction photovoltaics
TJ Grassman, AM Carlin, J Grandal, C Ratcliff, L Yang, MJ Mills, ...
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices 8256 …, 2012
242012
Decoupling single nanowire mobilities limited by surface scattering and bulk impurity scattering
DR Khanal, AX Levander, KM Yu, Z Liliental-Weber, W Walukiewicz, ...
Journal of Applied Physics 110 (3), 033705, 2011
202011
GaN and InN nanocolumns as electrochemical sensing elements: Potentiometric response to KCl, pH and urea
N Sofikiti, N Chaniotakis, J Grandal, M Utrera, MA Sánchez-García, ...
Materials Letters 64 (12), 1332-1335, 2010
202010
Plan-view transmission electron microscopy investigation of GaAs/(In, Ga) As core-shell nanowires
J Grandal, M Wu, X Kong, M Hanke, E Dimakis, L Geelhaar, H Riechert, ...
Applied Physics Letters 105 (12), 121602, 2014
192014
Optical properties of InN grown on Si (111) substrate
E Sakalauskas, P Schley, J Räthel, TA Klar, R Müller, J Pezoldt, K Tonisch, ...
physica status solidi (a) 207 (5), 1066-1069, 2010
192010
InN/InGaN multiple quantum wells emitting at grown by molecular beam epitaxy
J Grandal, J Pereiro, A Bengoechea-Encabo, S Fernandez-Garrido, ...
Applied Physics Letters 98 (6), 061901, 2011
182011
Determining surface Fermi level pinning position of InN nanowires using electrolyte gating
DR Khanal, W Walukiewicz, J Grandal, E Calleja, J Wu
Applied Physics Letters 95 (17), 173114, 2009
182009
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