Javier Grandal
Javier Grandal
Assistant professor at UPM (ETSI de Telecomunicación)
Verified email at upm.es
Cited by
Cited by
Growth, morphology, and structural properties of group‐III‐nitride nanocolumns and nanodisks
E Calleja, J Ristić, S Fernández‐Garrido, L Cerutti, MA Sánchez‐García, ...
physica status solidi (b) 244 (8), 2816-2837, 2007
A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si (111)
S Fernández-Garrido, J Grandal, E Calleja, MA Sánchez-García, ...
Journal of Applied Physics 106 (12), 126102, 2009
Coaxial multishell (In, Ga) As/GaAs nanowires for near-infrared emission on Si substrates
E Dimakis, U Jahn, M Ramsteiner, A Tahraoui, J Grandal, X Kong, ...
Nano letters 14 (5), 2604-2609, 2014
Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy
S Fernández-Garrido, VM Kaganer, KK Sabelfeld, T Gotschke, J Grandal, ...
Nano letters 13 (7), 3274-3280, 2013
Evidence of electron accumulation at nonpolar surfaces of InN nanocolumns
E Calleja, J Grandal, MA Sánchez-García, M Niebelschütz, V Cimalla, ...
Applied physics letters 90 (26), 262110, 2007
Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks
A Bengoechea-Encabo, F Barbagini, S Fernandez-Garrido, J Grandal, ...
Journal of crystal growth 325 (1), 89-92, 2011
Accommodation mechanism of InN nanocolumns grown on Si (111) substrates by molecular beam epitaxy
J Grandal, MA Sánchez-García, E Calleja, E Luna, A Trampert
Applied physics letters 91 (2), 021902, 2007
InN layers grown on silicon substrates: effect of substrate temperature and buffer layers
J Grandal, MA Sánchez-García
Journal of crystal growth 278 (1-4), 373-377, 2005
Phonon-plasmon coupling in electron surface accumulation layers in InN nanocolumns
S Lazić, E Gallardo, JM Calleja, F Agulló-Rueda, J Grandal, ...
Physical Review B 76 (20), 205319, 2007
Radiative defects in GaN nanocolumns: Correlation with growth conditions and sample morphology
P Lefebvre, S Fernández-Garrido, J Grandal, J Ristić, MA Sánchez-García, ...
Applied Physics Letters 98 (8), 083104, 2011
Epitaxial growth and characterization of InN nanorods and compact layers on silicon substrates
MA Sánchez‐García, J Grandal, E Calleja, S Lazic, JM Calleja, ...
physica status solidi (b) 243 (7), 1490-1493, 2006
Band bending at the surfaces of In-rich InGaN alloys
LR Bailey, TD Veal, PDC King, CF McConville, J Pereiro, J Grandal, ...
Journal of Applied Physics 104 (11), 113716, 2008
Morphology and optical properties of InN layers grown by molecular beam epitaxy on silicon substrates
J Grandal, MA Sánchez‐García, F Calle, E Calleja
physica status solidi (c) 2 (7), 2289-2292, 2005
Spectrum-optimized Si-based III-V multijunction photovoltaics
TJ Grassman, AM Carlin, J Grandal, C Ratcliff, L Yang, MJ Mills, ...
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices 8256 …, 2012
Decoupling single nanowire mobilities limited by surface scattering and bulk impurity scattering
DR Khanal, AX Levander, KM Yu, Z Liliental-Weber, W Walukiewicz, ...
Journal of Applied Physics 110 (3), 033705, 2011
GaN and InN nanocolumns as electrochemical sensing elements: Potentiometric response to KCl, pH and urea
N Sofikiti, N Chaniotakis, J Grandal, M Utrera, MA Sánchez-García, ...
Materials Letters 64 (12), 1332-1335, 2010
Plan-view transmission electron microscopy investigation of GaAs/(In, Ga) As core-shell nanowires
J Grandal, M Wu, X Kong, M Hanke, E Dimakis, L Geelhaar, H Riechert, ...
Applied Physics Letters 105 (12), 121602, 2014
Optical properties of InN grown on Si (111) substrate
E Sakalauskas, P Schley, J Räthel, TA Klar, R Müller, J Pezoldt, K Tonisch, ...
physica status solidi (a) 207 (5), 1066-1069, 2010
InN/InGaN multiple quantum wells emitting at grown by molecular beam epitaxy
J Grandal, J Pereiro, A Bengoechea-Encabo, S Fernandez-Garrido, ...
Applied Physics Letters 98 (6), 061901, 2011
Determining surface Fermi level pinning position of InN nanowires using electrolyte gating
DR Khanal, W Walukiewicz, J Grandal, E Calleja, J Wu
Applied Physics Letters 95 (17), 173114, 2009
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